T. Kamioka

发表

Full-scale whole device EMC/MD simulation of Si nanowire transistor including source and drain regions by utilizing graphic processing units

Y. Kamakura, Takanobu Watanabe, Akito Suzuki, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing

Y. Kamakura, Takanobu Watanabe, K. Ohmori, 2014, 2014 IEEE International Electron Devices Meeting.

Effect of Interface Roughness on Carrier Transport in Asymmetric Channel : An EMC / MD Simulation Study

Y. Kamakura, K. Shiraishi, K. Yamada, 2013 .

Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

Y. Kamakura, K. Shiraishi, K. Yamada, 2012, 2012 International Electron Devices Meeting.

Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation

Y. Kamakura, K. Shiraishi, K. Ohmori, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance

K. Araki, M. Yamaguchi, N. Shigekawa, 2018, IEEE Journal of Photovoltaics.

Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

Y. Hayashi, Y. Ohshita, T. Kamioka, 2017 .

Simulation of interdigitated back-contact silicon heterojunction solar cells with quantum transport model

Y. Hayashi, Y. Ohshita, T. Kamioka, 2015 .

Real-Time Scanning Tunneling Microscopy of Au Ion Irradiation Effects on Si(111) Surface

Takanobu Watanabe, I. Ohdomari, T. Kamioka, 2012 .

Enhancement of Si Photovoltaic Module by Introducing III-V/Si Hybrid Configurations and Cost Evaluations under Various Cost Ratios of III-V/Si Photovoltaics

M. Yamaguchi, Y. Ohshita, N. Kojima, 2017 .

Effects of damages induced by indium-tin-oxide reactive plasma deposition on minority carrier lifetime in silicon crystal

Y. Hayashi, A. Ogura, Y. Ohshita, 2019, AIP Advances.

Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell

Y. Hayashi, A. Ogura, Y. Ohshita, 2021 .

Defect analysis of crystalline Si solar cells by learning radiation-induced defects in Si

M. Yamaguchi, Y. Ohshita, N. Kojima, 2021, MRS Communications.

Evaluation of plasma induced defects on silicon substrate by solar cell fabrication process

A. Ogura, Y. Ohshita, T. Kamioka, 2020, Japanese Journal of Applied Physics.

Evaluation of ITO/a-Si Interface Fabricated by RPD Technique

A. Ogura, S. Yasuno, Y. Ohshita, 2019, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).

Plasma damage effect on ultraviolet-induced degradation of PECVD SiNx:H passivation

Y. Ohshita, T. Tachibana, T. Kamioka, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).

Real-Time Scanning Tunneling Microscopy Observation of Si(111) Surface Modified by Au+ Ion Irradiation

Takanobu Watanabe, I. Ohdomari, T. Kamioka, 2010 .

Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell

Y. Hayashi, A. Ogura, Y. Ohshita, 2019, Japanese Journal of Applied Physics.

Minority Carrier Recombination Properties of Crystalline Defect on Silicon Surface Induced by Plasma Enhanced Chemical Vapor Deposition

A. Ogura, Y. Ohshita, T. Tachibana, 2016 .

Light Induced Recombination Center at SiO2/Si Interface by the Reactive Plasma Deposition

Y. Ohshita, T. Kamioka, Yukie Isogai, 2021, Electronic Materials Letters.

Electrical properties of GaAs//indium tin oxide/Si junctions for III–V-on-Si hybrid multijunction cells

K. Araki, N. Shigekawa, Jianbo Liang, 2018, Japanese Journal of Applied Physics.

Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding

K. Araki, N. Shigekawa, Jianbo Liang, 2018 .

Effects of Surface Doping of Si Absorbers on the Band Alignment and Electrical Performance of TiO_2-Based Electron-Selective Contacts

Hyunju Lee, Y. Ohshita, N. Usami, 2019, MRS Advances.

Effects of annealing temperature on workfunction of MoOx at MoOx/SiO2 interface and process-induced damage in indium tin oxide/MoOx/SiOx/Si stack

Y. Hayashi, Y. Ohshita, T. Kamioka, 2018, Japanese Journal of Applied Physics.

Band profiling of p-Si/ITO interface by Kelvin probe force microscopy under light controlled conditions

Y. Ohshita, I. Kamiya, Fumihiko Yamada, 2018, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).

Surface modification of silicon with single ion irradiation

I. Ohdomari, T. Kamioka, 2007 .

Development of liquid-metal-ion source low-energy ion gun/high-temperature ultrahigh vacuum scanning tunneling microscope combined system

I. Ohdomari, T. Kamioka, T. Shinada, 2005 .

Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 ×7 Dimer-Adatom-Stacking Fault Surfaces

Takanobu Watanabe, I. Ohdomari, T. Kamioka, 2005 .

Development of an ion beam alignment system for real-time scanning tunneling microscope observation of dopant-ion irradiation.

Takanobu Watanabe, I. Ohdomari, T. Kamioka, 2008, The Review of scientific instruments.