S. Koba

Coupled Monte Carlo simulation of transient electron-phonon transport in small FETs

Y. Kamakura, H. Tsuchiya, I. N. Adisusilo, 2014, 2014 IEEE International Electron Devices Meeting.

Development of Monte Carlo Simulators for Integrated Nanoscale Devices

S. Koba, 2014 .

Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

M. Ogawa, H. Tsuchiya, S. Koba, 2011 .

Quantum transport simulation of III–V MOSFETs based on Wigner Monte Carlo approach

M. Ogawa, H. Tsuchiya, S. Koba, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs

M. Ogawa, H. Tsuchiya, S. Koba, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Channel length scaling limits of III–V channel MOSFETs governed by source–drain direct tunneling

Y. Kamakura, M. Ogawa, H. Tsuchiya, 2013 .

Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport

M. Ogawa, H. Tsuchiya, S. Koba, 2012, IEEE Transactions on Electron Devices.