S. Potbhare

发表

High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

N. Goldsman, A. Lelis, A. Akturk, 2009 .

A Physical Model of High Temperature 4H-SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2008, IEEE Transactions on Electron Devices.

Numerical Modeling and Characterization of n-Channel 4H-SiC Double-Diffused Vertical Power MOSFET

N. Goldsman, A. Lelis, Jianzhou Wu, 2005, 2005 International Semiconductor Device Research Symposium.

Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation

N. Goldsman, A. Lelis, J. McGarrity, 2005, 2005 International Conference On Simulation of Semiconductor Processes and Devices.

Ion implantation and SiC transistor performance

J. Suehle, N. Goldsman, M. Gurfinkel, 2009 .

Investigation of Drain Current Saturation in 4H-SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2007 .

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping

A. Lelis, D. Habersat, F. B. McLean, 2008 .

Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs

N. Goldsman, A. Lelis, J. McGarrity, 2007 .

Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

J. Suehle, N. Goldsman, K. Cheung, 2007, 2007 IEEE International Integrated Reliability Workshop Final Report.

Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations

N. Goldsman, A. Lelis, A. Akturk, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs

N. Goldsman, M. Gurfinkel, J. Suehle, 2008, IEEE Transactions on Electron Devices.

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

N. Goldsman, N. Goldsman, J. McGarrity, 2012, IEEE Transactions on Nuclear Science.

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

N. Goldsman, A. Lelis, J. McGarrity, 2006 .

Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

N. Goldsman, A. Lelis, A. Akturk, 2012 .

Compact modeling of 0.35µm SOI CMOS technology node for 4K DC operation using Verilog-A

M. Peckerar, Neil Goldsman, Akin Akturk, 2010 .

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

N. Goldsman, D. Gundlach, K. Cheung, 2010, IEEE Transactions on Electron Devices.

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

N. Goldsman, A. Lelis, J. McGarrity, 2006 .

Design of a phase-shifted ZVS full-bridge front-end DC/DC converter for fuel cell inverter applications

Haoyu Wang, Alireza Khaligh, Neil Goldsman, 2014, 2014 IEEE Transportation Electrification Conference and Expo (ITEC).

An enhanced specialized SiC power MOSFET simulation system

N. Goldsman, Z. Dilli, N. Goldsman, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge

N. Goldsman, A. Lelis, D. Habersat, 2009 .

Silicon Carbide-Silicon Dioxide Transition Layer Mobility

N. Goldsman, A. Lelis, A. Akturk, 2012 .

The effects of different silicon carbide — Silicon dioxide interface passivations on transition region mobility and transport

N. Goldsman, A. Lelis, A. Akturk, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

N. Goldsman, A. Lelis, A. Akturk, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Modeling the Effect of Conduction Band Density of States on Interface Trap Occupation and Its Influence on 4H-SiC MOSFET Performance

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs

N. Goldsman, A. Lelis, A. Akturk, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

N. Goldsman, A. Lelis, D. Habersat, 2006 .

Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation

S. Potbhare, 2005 .