S. Feng

发表

Temperature performance of terahertz quantum-cascade lasers: experiment versus simulation

H. Liu, H. Luo, Hua Li, 2009 .

Annealing behavior of InAs/GaAs quantum dot structures

Xiaodong Yang, Q. Zhao, Zhiming M. Wang, 1998 .

Line defect splitters for self-collimated beams in photonic crystals

Hou-zhi Zheng, Wei Liu, Fuhua Yang, 2006 .

Transmission properties of electron in quantum rings

S. Feng, Fu-hua Yang, Chun-Lei Li, 2008 .

Defects in organometallic vapor-phase epitaxy-grown GaInP layers

M. Razeghi, F. Omnès, J. Bourgoin, 1991 .

Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

Zhichuan Niu, D. Jiang, Zhiming M. Wang, 2000 .

ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS

M. Zazoui, J. Bourgoin, S. Feng, 1993 .

Electronic structure of self-assembled InAs quantum disks in an axial magnetic field and two-electron quantum-disk qubit

Hou-zhi Zheng, Zhichuan Niu, Shu-Shen Li, 2004 .

Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field

Jin-long Liu, Zhichuan Niu, Shu-Shen Li, 2003 .

Refined sectionalized method of QD-SOA

Zhitang Song, Q. Gong, Hailong Wang, 2014 .

Band structures and band gaps of liquid surface waves propagating through an infinite array of cylinders.

J. Zi, Xiaohan Liu, S. Feng, 2003, Physical review. E, Statistical, nonlinear, and soft matter physics.

InAs/GaAs single-electron quantum dot qubit

Hou-zhi Zheng, Jin-long Liu, Zhichuan Niu, 2001 .

Defects in molecular beam epitaxy grown GaAlAs layers

M. Zazoui, J. Bourgoin, S. Feng, 1989 .

Electric field effect on electron emission from the DX centre in GaAlAs

M. Zazoui, S. Feng, J. C. Bougoin, 1991 .

Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells

F. Peeters, S. Feng, Kai Chang, 2002 .

Li doping of GaAlAs

P. Rockett, M. Zazoui, J. Bourgoin, 1992 .

Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots

Fan Yang, S. Feng, Haili Wang, 2000 .

Effects of growth interruption on self-assembled InAs/GaAs islands

Xiaodong Yang, Song Feng, P. Han, 1998 .

Electron transport through coupled quantum dots

Shu-Shen Li, J. Xia, S. Feng, 2003 .

Electron and hole transport through quantum dots

Shu-Shen Li, J. Xia, S. Feng, 2002 .

Optical properties of InAs self-organized quantum dots in n–i–p–i GaAs superlattices

Z. G. Wang, Jixia Wang, Z. Yang, 2000 .

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer

Xiaodong Wang, S. Feng, Z. Miao, 2001 .

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

W. Ge, Yuqi Wang, Zhan-guo Wang, 1996 .

Photonic band gap structures in the Thue-Morse lattice

Qian Gong, Q. Gong, Jun Chen, 2007 .

The temporal coherence improvement of the two-dimensional negative-index slab image.

S. Feng, Xunya Jiang, Wei Li, 2006, Optics express.

Dynamical instability and switching of resonant tunneling device under terahertz radiation

Junsong Cao, S. Feng, Yuanwei Zhang, 2005 .

Geometrical-confinement effects on two electrons in elliptical quantum dots

S. Feng, Fu-hua Yang, Yong-Hui Liu, 2007 .

Current self-oscillation and driving-frequency dependence of negative-effective-mass diodes

Junsong Cao, S. Feng, Aizhen Li, 2001 .

External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire

Q. Gong, Liming Jiang, Hailong Wang, 2010 .

External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot

Q. Gong, Liming Jiang, Hailong Wang, 2009 .

The effects of electric and magnetic field on the hydrogenic donor impurity in GaN/AlxGa1-xN spherical quantum dot

Qian Gong, Hailong Wang, Hui-Ting Wu, 2010, OPTO.

The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot

Q. Gong, Liming Jiang, Hailong Wang, 2009 .

Photonic band gaps and localization in the Thue–Morse structures

John D. Joannopoulos, Yasha Yi, Yonggang Zhang, 2005 .

Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots

Fan Yang, S. Feng, Hangdong Wang, 2000 .

Electric Field Enhancement of Electron Emission from DX Centers and Consequences

H. Maaref, J. Bourgoin, S. Alaya, 1989 .

Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice

W. Ge, Baoquan Sun, Yuqi Wang, 1999 .

Generation of a supersinglet of three three-level atoms in cavity QED

Guang-Sheng Jin, Shu-Shen Li, Hou-zhi Zheng, 2005 .

Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field

Shu-Shen Li, S. Feng, Z. Niu, 2006 .

Electronic structure of self-assembled InAs quantum discs in a magnetic field with varying orientation and two-electron quantum-disc qubits

Shu-Shen Li, S. Feng, Qingrui Dong, 2005 .

Uniformity enhancement of the self-organized InAs quantum dots

Hui Wang, Zhiming M. Wang, S. Feng, 1999 .

Effect of disorder on self-collimated beam in photonic crystal

Hou-zhi Zheng, Wei Liu, S. Feng, 2006 .

Finite-width waveguide and waveguide intersections for self-collimated beams in photonic crystals

Zhitang Song, Fuhua Yang, S. Feng, 2004 .

Effect of doping concentration on the performance of terahertz quantum-cascade lasers

B. Williams, Q. Hu, M. Buchanan, 2005 .

Transmission Properties through a Double Quantum Dot with a Wave Packet

S. Feng, Fu-hua Yang, Xiao-Ming Wang, 2008 .

Physical meaning of electron capture kinetics on DX centers

J. Bourgoin, S. Feng, H. Bardeleben, 1988 .

X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

Q. Li, W. Fan, M. Xie, 2000 .

Suppression of DX centers in GaAlAs‐GaAs heterostructures

X. Letartre, D. Stiévenard, J. Bourgoin, 1989 .

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD

Hui Yang, W. Ge, Yuqi Wang, 1996 .

Characterization of electron irradiation induced defects in δ-doped GaAs superlattice structures

D. Stiévenard, C. Priester, J. Bourgoin, 1990 .

Electrical characterization of AlAs layers and GaAs‐AlAs superlattices

F. Mollot, M. Zazoui, J. Bourgoin, 1990 .

DEFECTS IN AlAs LAYERS AND GaAs-AlAs SUPERLATTICES

J. Bourgoin, S. Feng, 1990 .

DX Center in GaAs-GaAlAs Superlattices Suppression and Identification

F. Mollot, J. Bourgoin, S. Feng, 1989 .

Electric field induced localization in GaAlAs‐GaAs superlattices

G. Qin, J. Bourgoin, S. Feng, 1989 .

Characterization of interface defects in GaAs‐GaAlAs superlattices

A. Mauger, J. Bourgoin, S. Feng, 1987 .

Strain Effect on the Band Structure of InAs/GaAs Quantum Dots

D. Jiang, S. Feng, Haijun Zhu, 1999 .

Band offset of GaAs-GaInP heterojunctions

S. Delage, H. Blanck, M. Forte-Poisson, 1993 .

Monte Carlo simulation of terahertz quantum-cascade lasers

S. Feng, H. Liu, J. Lu, 2006, 2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics.