D. Carder

发表

Lifetimes of operating states in terahertz intracenter silicon lasers

P. J. Phillips, S. Pavlov, V. Shastin, 2009, 2009 International Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications.

Degenerate four wave mixing spectroscopy of oxygen vibrations in amorphous silicon

J. I. Dijkhuis, P. J. Phillips, F. Habraken, 2004 .

Intraband relaxation via polaron decay in InAs self-assembled quantum dots

Luke R. Wilson, John W. Cockburn, E. A. Zibik, 2004 .

Infrared modulated interlevel spectroscopy of 1.3μm self-assembled quantum dot lasers using a free electron laser

P. J. Phillips, M. Hopkinson, Huiyun Liu, 2006 .

Effects of annealing on the structural and optical properties of zinc sulfide thin films deposited by ion beam sputtering

J. Kennedy, D. Carder, S. Rubanov, 2014 .

Measurements of optical losses in mid-infrared semiconductor lasers using Fabry–Pérot transmission oscillations

M. Hopkinson, C. Sirtori, M. Steer, 2004 .

Strategies for reducing the emission wavelength of GaAs–AlAs quantum cascade lasers

M. Hopkinson, C. Chia, M. Steer, 2002 .

Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing

J. Kennedy, D. Carder, A. Markwitz, 2010 .

Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser

M. Hopkinson, M. Steer, J. Cockburn, 2003 .

Mg doping of InN and the use of yttrium‐stabilised zirconia substrates

S. M. Durbin, S. P. Ahrenkiel, C. Swartz, 2008 .

Photoluminescence, Capacitance-Voltage, and Variable Field Hall Effect Measurements of Mg-Doped InN

S. M. Durbin, J. Kennedy, C. Swartz, 2006 .

Buried p-type layers in Mg-doped InN

S. M. Durbin, C. Swartz, T. Myers, 2006 .

Properties of nitrogen implanted and electron beam annealed bulk ZnO

J. Kennedy, D. Carder, A. Markwitz, 2010 .

Nitride and Oxide Based Nanowires Grown by Plasma-Assisted Molecular Beam Epitaxy

S. M. Durbin, R. Tilley, C. Kendrick, 2006 .

Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing

J. Kennedy, D. Carder, A. Markwitz, 2013 .

Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

P. J. Phillips, T. Fromherz, D. Paul, 2006 .

Ultrafast measurements, of vibrational relaxation in the conjugated polymer poly(9,9-dioctylfluorene)

P. J. Phillips, David G Lidzey, D. Carder, 2004 .

Intersubband lifetimes in p-Si/SiGe terahertz quantum cascade heterostructures

Z. Ikonic, P. J. Phillips, P. Harrison, 2005 .

Pump–probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy

P. J. Phillips, T. Fromherz, D. Paul, 2005 .

Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

S. Pavlov, H. Hübers, B. Redlich, 2008 .

Generation of THz emission from donor centers in silicon under intracenter optical pumping

H. Riemann, S. Pavlov, B. Redlich, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Relaxation Processes of the Ge-H Stretch Modes in Hydrogenated Amorphous Germanium

J. I. Dijkhuis, P. J. Phillips, R. Schropp, 2006 .

Investigations of near infrared reflective behaviour of TiO2 nanopowders synthesized by arc discharge

J. Kennedy, D. Carder, S. Rubanov, 2014 .

Structural and photoluminescence properties of Gd implanted ZnO single crystals

J. Kennedy, P. Malar, D. Carder, 2011 .

The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots

M. S. Skolnick, P. J. Phillips, M. Hopkinson, 2005 .

Polaron decay and inter-level transfer in InAs/GaAs self-assembled quantum dots

P. J. Phillips, M. Hopkinson, G. Bastard, 2004 .

Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots

P. J. Phillips, M. Hopkinson, Huiyun Liu, 2004 .