M. Rousseau

发表

Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices

J. D. Jaeger, F. Dessenne, M. Rousseau, 2003 .

2 D-hydrodynamic energy model including avalanche breakdown phenomenon for power field effect transistors

J. De Jaeger, M. Rousseau, 2000, 7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427).

Resistive Nickel Temperature Sensor Integrated Into Short-Gate Length AlGaN/GaN HEMT Dedicated to RF Applications

H. Maher, A. Cutivet, J. De Jaeger, 2018, IEEE Electron Device Letters.

Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

K. Kalna, A. Soltani, B. Benbakhti, 2009, IEEE Transactions on Electron Devices.

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

X. Tang, J. D. Jaeger, M. Rousseau, 2009 .

Performance of Unstuck - Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz

S. Joblot, Y. Cordier, C. Gaquière, 2008, 2008 European Microwave Integrated Circuit Conference.

Thermal behaviour of gate-less AlGaN/GaN heterostructures

J. Laureyns, A. Soltani, B. Benbakhti, 2007, 2007 European Microwave Integrated Circuit Conference.

Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal Modeling

A. Soltani, B. Benbakhti, J. De Jaeger, 2006, IEEE Transactions on Electron Devices.

Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

Y. Cordier, D. Ducatteau, A. Soltani, 2013, IEEE Electron Device Letters.

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

A. Soltani, J. D. Jaeger, M. Rousseau, 2012 .

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

N. Bourzgui, A. Ougazzaden, G. Patriarche, 2014 .

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

V. Hoel, A. Soltani, R. Langer, 2010 .

Surface charge effects on planar submicrometer GaAs and InP devices

S. Laval, D. Pascal, M. Rousseau, 1987, IEEE Transactions on Electron Devices.

Electron transport properties of gallium nitride for microscopic power device modelling

A. Soltani, B. Benbakhti, J. D. Jaeger, 2009 .

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

N. Bourzgui, V. Mortet, A. Soltani, 2014 .

Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

R. Dupuis, A. Ougazzaden, K. Haenen, 2010 .

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Ali Soltani, Eva Monroy, M. Rousseau, 2011 .