H. Kawai

发表

Monte Carlo simulation of AlGaAs/GaAs hot‐electron transistors

K. Kaneko, N. Watanabe, S. Imanaga, 1986 .

Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

M. Ikeda, H. Kawai, F. Nakamura, 1998 .

AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact

S. Imanaga, H. Kawai, F. Nakamura, 1998 .

Band offset effect on transport in AlxGa1-xAs/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition

C. Takano, H. Kawai, K. Taira, 1987, IEEE Transactions on Electron Devices.

Low cost high voltage GaN polarization superjunction field effect transistors

Yusuke Kamiyama, Hiroshi Amano, Vineet Unni, 2017 .

GaN based Super HFETs over 700V using the polarization junction concept

E. Narayanan, H. Kawai, A. Nakajima, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Strained GaInAs-base hot electron transistor

K. Kaneko, N. Watanabe, T. Watanabe, 1988 .

InAs quantum‐well‐base InAs/GaSb hot‐electron transistors

H. Kawai, F. Nakamura, K. Taira, 1991 .

InAs-GaSb hot electron transistors grown by metalorganic chemical vapor deposition

Y. Mori, H. Kawai, F. Nakamura, 1991 .

NPN and PNP GaInP/GaAs heterojunction bipolar transistors grown by MOCVD

T. Kobayashi, H. Kawai, F. Nakamura, 1989 .

Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

Y. Irokawa, H. Kawai, Y. Nakano, 2011 .

Photo‐capacitance spectroscopy investigation of deep‐level defects in AlGaN/GaN hetero‐structures with different current collapses

Y. Irokawa, H. Kawai, Y. Nakano, 2010 .

Improving collector-current uniformity in emitter-graded AlGaAs/GaAs heterojunction bipolar transistors

C. Takano, H. Kawai, K. Taira, 1988, IEEE Electron Device Letters.

Uniform (Al)GaAs crystal growth and microwave HIFETs grown by barrel-reactor MOCVD

H. Kawai, F. Nakamura, 1988 .

UV/VUV photodetectors using group III‐nitride semiconductors

E. Yamaguchi, H. Kawai, T. Hitora, 2009 .

Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition

K. Kaneko, N. Watanabe, H. Kawai, 1986 .

Doublet state of resonantly coupled AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

N. Watanabe, H. Kawai, J. Kaneko, 1985 .

Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Y. Irokawa, H. Kawai, Y. Nakano, 2012 .

Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode

S. Imanaga, H. Kawai, F. Nakamura, 2001 .

Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. II. Al and Te Doped Phosphors

H. Kawai, T. Hoshina, 1980 .

Effect of compositionally grading on DC characteristics of A1GaAs heterojunction bipolar transistors

C. Takano, H. Kawai, K. Taira, 1988 .

Group III-nitride semiconductor Schottky barrier photodiodes for radiometric use in the UV and VUV regions

E. Yamaguchi, H. Kawai, H. Ishihara, 2009 .

High‐sensitivity UV phototransistor with GaN/AlGaN/GaN gate epi‐structure

M. Okada, Y. Ohno, H. Kawai, 2007 .

Inductively Coupled Plasma Reactive Ion Etching with SiCl4 Gas for Recessed Gate AlGaN/GaN Heterostructure Field Effect Transistor

D. Kikuta, Y. Ohno, H. Kawai, 2007 .

Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

E. Narayanan, H. Long, H. Kawai, 2018, IET Power Electronics.

Luminescent properties of ZnS:Ce, Li

H. Kawai, T. Hoshina, S. Yokono, 1981 .

Complex refractive indices of AlGaAs at high temperatures measured by in situ reflectometry during growth by metalorganic chemical vapor deposition

K. Kaneko, N. Watanabe, H. Kawai, 1987 .

Intervalley scattering observed in an AlGaAs/GaAs hot-electron transistor

K. Kaneko, N. Watanabe, S. Imanaga, 1987 .

Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors

S. Imanaga, H. Kawai, 1998 .

Effects of Fluxes on Particle Growth of ZuS Phosphor

H. Kawai, T. Hoshina, Tomohiko Abe, 1981 .

Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu,Al Phosphor

Hiroji Kawai, H. Kawai, Shigeo Kuboniwa, 1980 .

Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors

H. Kawai, T. Hoshina, 1980 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Cathodoluminescent Properties of ZnS:Ce, Li Phosphor

H. Kawai, T. Hoshina, 1981 .

Exciton structure in luminescence excitation spectra of ZnS phosphors

H. Kawai, T. Hoshina, 1977 .

GaAs vertical and lateral growth enhancement using trimethylgallium and trimethylarsenic in selective area metalorganic vapor phase epitaxy on a (111) B substrate

H. Kawai, S. Tomioka, Y. L. Bellego, 1994 .

Analysis of AlGaAs/GaAs superlattices by means of sputter-assisted AES, SEM and TEM

H. Kawai, K. Kajiwara, 1990 .

Excimer‐laser annealed ohmic contacts to n‐GaAs substrates through an ultrathin reacted layer

K. Kaneko, N. Watanabe, S. Imanaga, 1987 .

Se and Te doping in LP-MOCVD-grown GaSb using H2Se and DETe

H. Kawai, F. Nakamura, K. Taira, 1991 .

Exciton structures in excitation spectra of impurity emission in ZnS

H. Kawai, T. Hoshina, 1979 .

Concentration Dependence of Green-Cu Luminescence in ZnS: Cu, Al

H. Kawai, S. Kuboniwa, T. Hoshina, 1974 .

Concentration-dependent nonradiative processes in ZnS phosphors

Hiroji Kawai, H. Kawai, Teruhiko Hoshina, 1976 .

Emitter grading in AlGaAs/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

C. Takano, H. Kawai, K. Taira, 1986 .

Chemical trends in the activation energies of DX centers

Y. Mori, K. Kaneko, H. Kawai, 1984 .

MOCVD-grown AlGaAs/GaAs HBTs with epitaxially embedded p+ layers in extrinsic base

K. Kaneko, H. Kawai, K. Taira, 1987 .

Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

K. Kaneko, H. Kawai, N. Watanabe, 1984 .

Band lineup for a GaInP/GaAs heterojunction measured by a high‐gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

H. Kawai, F. Nakamura, Takashi Kobayashi, 1989 .

Superlattices and Superstructures Grown by MOCVD

Yoshifumi Mori, Hiroji Kawai, Y. Mori, 1987 .

A collector-up AlGaAs/GaAs heterojunction bipolar transistor fabricated using three-stage MOCVD

K. Kaneko, H. Kawai, T. Kobayashi, 1988, IEEE Electron Device Letters.

AlGaAs/GaAs quantum structures grown by MOCVD — Coupled quantum well photoluminescence and vertical transport through hetero-barriers

K. Kaneko, N. Watanabe, H. Kawai, 1984 .

High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition

K. Kaneko, O. Matsuda, H. Kawai, 1983 .

2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate

M. Sweet, E. Narayanan, H. Long, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

Akira Nakajima, Hiroji Kawai, E. Narayanan, 2011, IEEE Electron Device Letters.

MOCVD-grown AlGaAs/GaAs hot-electron transistor with a base width of 30 nm

K. Kaneko, N. Watanabe, S. Imanaga, 1985 .

Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy

K. Kaneko, N. Watanabe, H. Kawai, 1985 .

Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition

K. Kaneko, N. Watanabe, H. Kawai, 1988 .

Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control

Hiroji Kawai, Syunji Imanaga, S. Imanaga, 1997 .

High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface

E. M. Sankara Narayanan, Akira Nakajima, Hiroji Kawai, 2010 .

One-dimensional simulation of charge control in a novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping

S. Imanaga, H. Kawai, 1998 .

Crosstalk in monolithic GaN-on-Silicon power electronic devices

E. M. Sankara Narayanan, Vineet Unni, Hiroji Kawai, 2014, Microelectron. Reliab..

AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition

M. Ikeda, S. Hashimoto, H. Kawai, 1998 .

Effect of an active layer thickness on lateral and longitudinal modes of a gain guiding laser with a tapered stripe structure

T. Mamine, H. Kawai, 1983 .

Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier

K. Kaneko, N. Watanabe, H. Kawai, 1984 .

Performance of AlN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation

S. Imanaga, H. Kawai, 2000 .