T. Billon

发表

Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

M. Mouis, O. Weber, F. Andrieu, 2006, IEEE Transactions on Electron Devices.

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

A. Toffoli, O. Cueto, A. Roule, 2010, IEEE Electron Device Letters.

High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

R. Truche, Y. Campidelli, D. Bensahel, 2008, IEEE Electron Device Letters.

4H-SiC: a material for high temperature Hall sensor

E. Neyret, J. Pernot, T. Billon, 2002 .

Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si Wafers

J. Hartmann, J. Colonna, T. Ernst, 2008 .

Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Laurent Vivien, Suzanne Laval, G. Rolland, 2004 .

Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique

P. Rivallin, B. Vincent, Y. Morand, 2006, 2006 International SiGe Technology and Device Meeting.

Metallic source and drain module for FDSOI MOSFETs applications

O. Faynot, M. Vinet, L. Hutin, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

Structural properties of tensile-strained Si layers grown on Si1−xGex virtual substrates (x = 0.2, 0.3, 0.4 and 0.5)

J. Hartmann, D. Rouchon, M. Mermoux, 2008 .

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

P. Mur, T. Billon, B. Caussat, 2008 .

SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations

J. Bluet, E. Bano, N. Daval, 2003 .

Experimental evidence for the existence of a mobility edge in silicon carbide inversion layers

T. Ouisse, T. Billon, 1995 .

Reduced Pressure - Chemical Vapor Deposition of high Ge content (20% - 55%) SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, G. Rolland, 2004 .

Carbon-doped GeTe: A promising material for Phase-Change Memories

G. Reimbold, Sylvain Maitrejean, D. Blachier, 2011 .

Fabrication of compressively-strained GeOI substrates using the Smart CutTM technology

K. Bourdelle, B. Ghyselen, E. Augendre, 2009, 2009 IEEE International SOI Conference.

Observation of random telegraph signal in SiC Schottky diodes

T. Ouisse, H. Lahreche, T. Ouisse, 1997 .

Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes

T. Ouisse, C. Jaussaud, T. Billon, 1999 .

Control of Al-implantation doping in 4H-SiC

J. Bluet, J. Michaud, J. Pernot, 2001 .

Activation of aluminum implanted at high doses in 4H–SiC

J. Bluet, J. Michaud, J. Pernot, 2000 .

Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe

J. Hartmann, T. Billon, F. Fillot, 2008 .

Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: II. Strain and defects

D. Rouchon, M. Mermoux, T. Billon, 2007 .

Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: I. Film thickness and morphology

J. Hartmann, G. Rolland, T. Billon, 2007 .

High-temperature growth of very high germanium content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006 .

High germanium content SiGe virtual substrates grown at high temperatures

N. Cherkashin, J. Hartmann, A. Claverie, 2005 .

Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping

L. Di Cioccio, J. Pernot, T. Billon, 2003 .

Wet cleaning and surface characterization of Si1−xGex virtual substrates after a CMP step

Y. Campidelli, J. Hartmann, P. Besson, 2008 .

Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes

Jean-Michel Hartmann, Laurent Vivien, Suzanne Laval, 2004 .

Functionalization of 3-D Structures for Grafting of Biological Molecules

P. Mur, G. Delapierre, T. Billon, 2005 .

Selective epitaxial growth of Ge(1 1 0) in trenches using the aspect ratio trapping technique

J. Hartmann, L. Baud, V. Delaye, 2010 .

Electrical characterization of instabilities in 6H silicon carbide metal‐oxide‐semiconductor capacitors

G. Guillot, J. Autran, C. Jaussaud, 1994 .

Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC (0001) Interface Properties by AR-XPS Measurements

G. Guillot, L. Di Cioccio, O. Renault, 2003 .

Influence of induced strain on enrichment kinetic during local Ge condensation of SiGe/SOI mesas

P. Brianceau, P. Rivallin, C. Vallée, 2008 .

Germanium Deep-Submicron p -FET and n -FET Devices, Fabricated on Germanium-On-Insulator Substrates

K. Opsomer, B. Kaczer, A. Satta, 2007 .

Selective chemical vapour etching of Si1−xGex versus Si with gaseous HCl

J. Hartmann, Y. Bogumilowicz, T. Billon, 2006 .

Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition

A. Toffoli, S. Maitrejean, L. Perniola, 2011, 2011 IEEE International Interconnect Technology Conference.

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

Sylvain Maitrejean, Bernard Guillaumot, S. Minoret, 2005 .

MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

C. Leroux, D. Bensahel, X. Garros, 2009 .

Reduced pressure-chemical vapor deposition of high ge content Si1-xGex and high C content Si1-yCy layers for advanced metal oxide semiconductor transistors

J. Hartmann, F. Andrieu, Y. Bogumilowicz, 2005 .

Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor

P. Mur, T. Billon, B. Caussat, 2008 .

Investigation of Copper removal efficiency on reclaimed wafers with HF-based solutions

C. Giroud, T. Billon, S. Favier, 2004 .

A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers

J. Hartmann, J. Damlencourt, T. Billon, 2012 .

Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Yves Campidelli, Y. Bogumilowicz, R. Truche, 2005 .

Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains

J. Hartmann, L. Clavelier, G. Rolland, 2004 .

Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering

J. Hartmann, T. Billon, F. Fillot, 2008 .

Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices

J. Hartmann, A. Papon, J. Barnes, 2009 .

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

Marc Heyns, Marc Meuris, G. Raskin, 2005 .

Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%)

J. Hartmann, L. Baud, G. Rolland, 2006 .

Growth kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) surfaces

J. Hartmann, G. Rolland, T. Billon, 2006 .

Surface treatment for the atomic layer deposition of HfO2 on silicon

J. Damlencourt, F. Martin, M. Semeria, 2005 .

Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal‐oxide‐silicon carbide structures

J. Autran, C. Jaussaud, C. Raynaud, 1995 .

Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography

E. Neyret, L. Di Cioccio, T. Billon, 2002 .

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Laurent Vivien, J. M. Fedeli, Jean-Paul Barnes, 2010 .

Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors

Thomas Ernst, Nathalie Vulliet, G. Rolland, 2005 .

Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy

G. Guillot, R. Davis, F. Ducroquet, 1996 .

N-doped GeTe as performance booster for embedded Phase-Change Memories

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 International Electron Devices Meeting.

Dual metallic source and drain integration on planar Single and Double Gate SOI CMOS down to 20nm: Performance and scalability assessment

O. Faynot, M. Vinet, D. Lafond, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

X-ray spectroscopy of the oxidation of 6H-SiC(0001)

L. Kubler, T. Billon, A. Ermolieff, 1999 .

Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

M. Pons, P. Ferret, T. Billon, 2004 .

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

D. Chaussende, M. Mermoux, G. Feuillet, 2003 .

Oxidation of 6H-SiC(0001)

L. Kubler, T. Billon, A. Ermolieff, 1999 .

Electrical and physico-chemical characterizations of the SiO2/SiC interface

T. Ouisse, E. Bano, C. Jaussaud, 1995 .

Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains

J. Hartmann, P. Batude, B. Previtali, 2011 .

An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step

Yves Campidelli, Pascal Besson, Y. Campidelli, 2006 .

High temperature growth of very high Ge content SiGe virtual substrates

J. Hartmann, Y. Bogumilowicz, A. Papon, 2006, 2006 International SiGe Technology and Device Meeting.

Silicon nanostructures for DNA biochip applications

P. Mur, G. Delapierre, T. Billon, 2007 .

DNA microarrays on silicon nanostructures: optimization of the multilayer stack for fluorescence detection.

P. Mur, G. Delapierre, T. Billon, 2007, Biosensors & bioelectronics.

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Yves Morand, Yves Campidelli, Sorin Cristoloveanu, 2008 .

Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC

L. Di Cioccio, M. Pons, P. Ferret, 2003 .

Epitaxial silicon carbide simulations vs. experiments: etching, growth rates and aluminum/nitrogen doping

M. Pons, P. Ferret, T. Billon, 2002 .

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

L. Di Cioccio, M. Pons, P. Ferret, 2004 .

Advances in SiC Materials and Technology for Schottky Diode Applications

L. Di Cioccio, T. Billon, 2002 .

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 IEEE International Memory Workshop.

TEM studies of the defects introduced by ion implantation in SiC

A. Claverie, T. Billon, C. Bourgerette, 1999 .

Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation

Michel Pons, Roland Madar, T. Billon, 2004 .

Heat and mass transfer simulation of SiC boule growth by sublimation

A. Pisch, G. Feuillet, M. Pons, 2000 .

Heat and mass transfer modeling for a better knowledge of the large-area growth of homoepitaxial SiC by CVD

M. Pons, P. Ferret, T. Billon, 2000 .

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

L. Di Cioccio, S. Juillaguet, J. Pernot, 2002 .

SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition

J. Hartmann, Y. Bogumilowicz, G. Rolland, 2005 .

Investigation of 4H-SiC as a New Material for Hall or Temperature Sensors Working up to 500 °C

E. Neyret, J. Pernot, T. Billon, 2001 .

XPS Analysis of AlGaN/GaN Surface after Chemical and N-Containing Plasma Treatments

M. Charles, E. Morvan, O. Renault, 2013 .

Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications

J. Bluet, E. Neyret, D. Anglos, 2001 .

High temperature silicon carbide MOSFETs with very low drain leakage current

P. Morfouli, L. Baud, Thierry Ouisse, 1994 .

Growth and structural properties of SiGe virtual substrates on Si(1 0 0), (1 1 0) and (1 1 1)

A. Papon, T. Billon, J. Hartmann, 2009 .

Reduced pressure chemical vapor deposition of Ge thick layers on Si(0 0 1), Si(0 1 1) and Si(1 1 1)

V. Destefanis, Anne-Marie Papon, A. Papon, 2008 .

Review of Some Critical Aspects of Ge and GeOI Substrates

Yves Morand, Simon Deleonibus, Laurent Clavelier, 2006 .

SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy

N. Cherkashin, A. Claverie, Y. Bogumilowicz, 2005 .

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Y. Bogumilowicz, G. Rolland, J. Hartmann, 2005 .

Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates

Y. Bogumilowicz, G. Rolland, T. Billon, 2005 .