P. Xuan

Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime

C. Hu, J. Kedzierski, E. Anderson, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

FinFET SONOS flash memory for embedded applications

J. Bokor, Min She, Peiqi Xuan, 2003, IEEE International Electron Devices Meeting 2003.

Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel

Vivek Subramanian, Jeffrey Bokor, Chenming Hu, 2002 .

Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology

Jeffrey Bokor, Qian Wang, Hongjie Dai, 2004 .

Sub-20 nm CMOS FinFET technologies

Chenming Hu, N. Lindert, Tsu-Jae King, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain

C. Hu, J. Kedzierski, E. Anderson, 2000 .