C. Hauswald

发表

Luminous Efficiency of Ordered Arrays of GaN Nanowires with Subwavelength Diameters

O. Brandt, H. Grahn, I. Giuntoni, 2017 .

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

C. Ronning, O. Brandt, H. Grahn, 2016, Nano letters.

Dynamics of free and bound excitons in GaN nanowires

C. Hauswald, 2015 .

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

O. Brandt, M. Ramsteiner, V. Consonni, 2014, Nanotechnology.

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

O. Brandt, H. Grahn, C. Hauswald, 2014, 1408.5263.

Comparison of the Luminous Efficiencies of Ga- and N-Polar In x Ga 1 -x N /In y Ga 1 -y N Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

M. Albrecht, O. Brandt, C. Hauswald, 2015, 1510.06512.

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

O. Brandt, H. Grahn, A. Trampert, 2016, 1607.04036.

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

R. Kucharski, O. Brandt, M. Albrecht, 2013 .

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

O Brandt, O. Brandt, H. Grahn, 2015, Nano letters.

Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy.

S. Sanguinetti, A. Trampert, C. Hauswald, 2013, Nano letters.

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

O. Brandt, M. Ramsteiner, R. Erni, 2015 .

Correlation between In content and emission wavelength of InxGa1−xN/GaN nanowire heterostructures

O. Brandt, M. Ramsteiner, C. Hauswald, 2012, Nanotechnology.

Indium Incorporation in InxGa1–xN/GaN Nanowire Heterostructures Investigated by Line-of-Sight Quadrupole Mass Spectrometry

O. Brandt, C. Hauswald, L. Geelhaar, 2012 .

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy

O. Brandt, M. Hanke, C. Hauswald, 2014, 1405.1507.

High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

O. Brandt, C. Hauswald, L. Geelhaar, 2015 .

Luminous efficiency of axial In(x)Ga(1-x)N/GaN nanowire heterostructures: interplay of polarization and surface potentials.

Oliver Brandt, Lutz Geelhaar, Christian Hauswald, 2013, Nano letters.

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

M. Albrecht, M. Boćkowski, J. Weyher, 2013 .

Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires

O. Brandt, H. Grahn, C. Hauswald, 2013, 1308.1799.

Radiative and nonradiative decay of excitons in GaN nanowires

Oliver Brandt, Holger T. Grahn, Christian Hauswald, 2014, Photonics West - Optoelectronic Materials and Devices.

Crystal-phase quantum dots in GaN quantum wires

O. Brandt, H. Grahn, C. Hauswald, 2016, 1601.01162.

Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy.

P. Bogdanoff, S. Fiechter, C. Hauswald, 2013, Journal of the American Chemical Society.

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

O. Brandt, M. Ramsteiner, C. Hauswald, 2015 .

Current path in light emitting diodes based on nanowire ensembles

O Brandt, O. Brandt, M. Hanke, 2012, Nanotechnology.

Origin of the nonradiative decay of bound excitons in GaN nanowires

K. Sabelfeld, O. Brandt, H. Grahn, 2014, 1408.1236.

Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors.

P. Lefebvre, O. Brandt, C. Hauswald, 2014, 1407.4279.

Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy

Oliver Brandt, Achim Trampert, Pinar Dogan, 2012, OPTO.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

H. Grahn, C. Hauswald, T. Flissikowski, 2015, Nano letters.