C. Hwang

发表

Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers

H. M. Marcos, G. Rozgonyi, J. Dyment, 1974 .

Mode control in GaAs large‐cavity double‐heterostructure lasers

B. Hakki, C. Hwang, 1974 .

Initial degradation mode of long‐life (GaAl)As‐GaAs lasers

C. Hwang, 1977 .

Improvement of properties of dynamic random access memories capacitors by PH3 plasma doping process after the formation of hemispherical-grained silicon

C. Hwang, S. Woo, H. Moon, 1999 .

Shallow acceptor luminescence in GaAs grown by liquid phase epitaxy

H. Queisser, C. Hwang, W. Brantley, 1972 .

Effect of Heat Treatment with Excess Arsenic Pressure on Photoluminescence of p‐Type GaAs

C. Hwang, 1968 .

Photoluminescence Study of Defect Formation during Copper Diffusion in Zn‐Doped GaAs

C. Hwang, 1968 .

Effect of Heat Treatment on Photoluminescence of Te Doped GaAs

C. Hwang, 1967 .

Suppression of output nonlinearities in double‐heterostructure lasers by use of misaligned mirrors

C. Hwang, J. Ripper, H. Luechinger, 1977 .

Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. II. Temperature Dependence of Threshold Current and Excitation Dependence of Superradiance Spectra

C. Hwang, 1970 .

Optical Properties of n‐Type GaAs. III. Relative Band‐Edge Recombination Efficiency of Si‐ and Te‐Doped Crystals before and after Heat Treatment

C. Hwang, 1969 .

Photoluminescence Study of Thermal Conversion in GaAs Grown from Silica Boats

C. Hwang, 1968 .

Calculation of the Formation Energy of a Schottky Defect in Germanium

C. Hwang, L. Watt, 1968 .

Effect of Heat Treatment on the 1.370 eV Photoluminescence Emission Band in Zn‐Doped GaAs

C. Hwang, 1968 .

Threshold behavior of (GaAl)As‐GaAs lasers at low temperatures

C. Hwang, F. Prince, N. Patel, 1978 .

Excitation and Doping Dependences of Electron Diffusion Length in GaAs Junction Lasers

C. Hwang, 1971 .

Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers inp-Type GaAs

C. Hwang, 1969 .

Analysis of weakly bonded oxygen in HfO2/SiO2/Si stacks by using HRBS and ARXPS

S. Maikap, C. Hwang, T. Tien, 2010 .

Dependence of threshold and electron lifetime on acceptor concentration in GaAs–Ga1−xAlxAs lasers

J. Dyment, C. Hwang, 1973 .

Electron activity coefficients in heavily doped semiconductors with small effective mass

J. Brews, C. Hwang, 1970 .

Optical Properties of n‐Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te‐Doped GaAs

C. Hwang, 1969 .

Optical Properties of n‐Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence Measurements

C. Hwang, 1969 .

Quantum Efficiency and Radiative Lifetime of the Band-to-Band Recombination in Heavily Dopedn-Type GaAs

C. Hwang, 1972 .

Doping Dependence of Hole Lifetime in n‐Type GaAs

C. Hwang, C. J. Hwang, 1971 .

uv Microprobe Technique for Measurement of Minority‐Carrier Diffusion Length in GaP p‐n Junction Material

A. Bergh, C. Hwang, S. Haszko, 1971 .

Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions

C. Hwang, 1970 .

SiO2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor

Y. Su, C. Hwang, S. Shei, 1995 .

Lifetime of excitons bound to neutral donors in high-purity GaAs

C. Hwang, L. Dawson, 1972 .

Lifetimes of Free and Bound Excitons in High-Purity GaAs

C. Hwang, 1973 .

Calculation of Fermi Energy and Bandtail Parameters in Heavily Doped and Degenerate n‐Type GaAs

C. Hwang, 1970 .

Erratum: Continuous operations of GaAs–Ga1−xAlx As double‐heterostructure lasers with 30°C half‐lives exceeding 1000 h

J. C. Dyment, Robert L. Hartman, M. Kuhn, 1973 .

Electrochemical Potential as the Sum of Chemical and Electrical Potentials with a Generalization to a Wider Class of Perturbations

J. Brews, C. Hwang, 1971 .

Researches of SiO2 on InP and GaAs Mos Structures

Y. Su, C. Hwang, J. Lin, 1993 .