R. Hartman

发表

Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers

H. M. Marcos, G. Rozgonyi, J. Dyment, 1974 .

Improvements of the electro‐optic properties of (Al,Ga)As lasers by means of reduced reflection dielectric facet coatings

T. Paoli, F. Nash, R. Hartman, 1981 .

Reliability of DH GaAs lasers at elevated temperatures

R. Dixon, R. Hartman, 1975 .

Improved light‐output linearity in stripe‐geometry double‐heterostructure (Al,Ga)As lasers

R. Dixon, F. Nash, R. Hartman, 1976 .

Accelerated aging and a uniform mode of degradation in (Al,Ga)As double-heterostructure lasers

R. Dixon, R. Hartman, 1977 .

Continuously operated (Al,Ga)As double‐heterostructure lasers with 70 °C lifetimes as long as two years

R. Dixon, R. Hartman, N. Schumaker, 1977 .

Facet oxide formation and degradation of GaAs lasers

F. Nash, R. Hartman, 1979 .

GaAs laser reliability and protective facet coatings

R. Dixon, F. Nash, R. Hartman, 1979 .

Stabilization of aging‐induced self‐pulsations and the elimination of an initial temporally saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings

R. Dixon, T. Paoli, F. Nash, 1979 .

Accelerated facet erosion formation and degradation of (Al, Ga)As double-heterostructure lasers

F. Nash, R. Hartman, 1980, IEEE Journal of Quantum Electronics.

Lifetime comparisons between 8‐ and 12‐μm‐wide stripe‐geometry proton‐bombarded double heterostructure (Al,Ga)As lasers

R. Dixon, R. Hartman, 1980 .

Observations of negative resistance associated with superlinear emission characteristics of (Al, Ga) As double-heterostructure lasers

T. Paoli, R. Hartman, P. Anthony, 1980 .

Pulsations and absorbing defects in (Al,Ga)As injection lasers

L. A. Koszi, R. A. Logan, Won-Tien Tsang, 1979 .

Defect structure introduced during operation of heterojunction GaAs lasers

P. Petroff, R. Hartman, Pierre Petroff, 1973 .

Rapid degradation phenomenon in heterojunction GaAlAs-GaAs lasers

P. Petroff, R. Hartman, Pierre Petroff, 1974 .

Degradation of CW GaAs double-heterojunction lasers at 300 K

B. W. Hakki, L. A. D'Asaro, B. C. De Loach, 1973 .

Degradation and Passivation of GaP Light-Emitting Diodes

B. Schwartz, M. Kuhn, R. Hartman, 1971 .

Characterization of (Al,Ga)As injection lasers using the luminescence emitted from the substrate

R. Hartman, L. Koszi, 1978 .

Capacitance spectroscopy studies of degraded AlxGa1−xAs DH stripe‐geometry lasers

D. Lang, R. Hartman, N. Schumaker, 1976 .

Nature of optically induced defects in Ga1−xAlxAs–GaAs double‐heterojunction laser structures

P. Petroff, R. Hartman, W. D. Johnston, 1974 .

cw narrow beam (AlGa)As multiquantum‐well heterostructure lasers grown by molecular beam epitaxy

W. Tsang, R. Hartman, 1981 .

Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

A. Cho, H. Casey, R. Dixon, 1976 .

Effects of Ga(As,Sb) active layers and substrate dislocation density on the reliability of 0.87‐μm (Al,Ga)As lasers

R. Hartman, N. Schumaker, W. Wagner, 1982 .

Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1 percent/kh) at 70°C

R. Dupuis, F. Nash, R. Hartman, 1983, IEEE Electron Device Letters.

cw electro‐optical characteristics of graded‐index waveguide separate‐confinement heterostructure lasers with proton‐delineated stripe

W. Tsang, R. Hartman, 1983 .

Gain and carrier lifetime measurements in AlGaAs single quantum well lasers

Niloy K. Dutta, Won-Tien Tsang, N. Dutta, 1983 .

Strip buried heterostructure lasers with passive distributed Bragg reflectors

R. Logan, L. Johnson, W. Tsang, 1979, IEEE Journal of Quantum Electronics.

The cw electro‐optical properties of (Al,Ga)As modified‐strip buried‐heterostructure lasers

R. Logan, W. Tsang, R. Hartman, 1980 .

The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

W. R. Holbrook, W. Tsang, B. Schwartz, 1981 .

Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy

W. Tsang, F. Nash, R. Hartman, 1981 .

Electro‐optical effects of externally applied 〈100〉 uniaxial stress on InGaAsP 1.3 and 1.5 μm injection lasers

R. Hartman, V. Swaminathan, P. Parayanthal, 1988 .

Thermal Annealing of Proton‐Bombarded GaAs and ( Al , Ga ) As

B. Schwartz, R. Hartman, L. Koszi, 1984 .

Temperature Dependence of the Low-Field Galvanomagnetic Coefficients of Bismuth

R. Hartman, 1969 .

Low-threshold InGaAsP ridge waveguide lasers at 1.3 µm

L. Stulz, I. Kaminow, R. Hartman, 1983 .

Implementation of the proposed reliability assurance strategy for an InGaAsp/InP, planar mesa, buried heterostructure laser operating at 1.3 µm for use in a submarine cable

R. L. Hartman, F. R. Nash, N. K. Dutta, 1985, AT&T Technical Journal.

Strain‐induced degradation of GaAs injection lasers

Robert L. Hartman, R. Hartman, A. R. Hartman, 1973 .

CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41-52) 22 Soft x-ray production from transition radiation using thin foils

J. Slater, S. Chinn, W. Wilson, 1981 .

Three dimensional axisymmetric space charge simulation via boundary elements and emitted particles

Robert L. Hartman, William A. Mackie, Paul R. Davis, 1996 .

Use of boundary element methods in field emission computations

Robert L. Hartman, William A. Mackie, Paul R. Davis, 1994 .

Intervalley scattering by donor ions in germanium

P. J. Price, R. Hartman, 1963 .

Methodology of accelerated aging

R. L. Hartman, W. B. Joyce, F. R. Nash, 1985, AT&T Technical Journal.

Robust high current field emitter tips and arrays for vacuum microelectronics devices

W. Mackie, R. Hartman, F. Charbonnier, 2001 .

Deep‐level luminescence in AlxGa1−xAs double‐heterostructure lasers

J. P. Ziel, R. Hartman, 1979 .

High current density field emission from transition metal carbides

W. Mackie, R. Hartman, P. R. Davis, 1993 .

High‐temperature heat contents, thermal diffusivities, densities, and thermal conductivities of n‐type SiGe(GaP), p‐type SiGe(GaP), and p‐type SiGe alloys

C. B. Vining, R. Hartman, K. Gschneidner, 1987 .

Statistical characterization of the lifetimes of continuously operated (Al,Ga)As double‐heterostructure lasers

W. B. Joyce, R. W. Dixon, Robert L. Hartman, 1976 .

Erratum: Continuous operations of GaAs–Ga1−xAlx As double‐heterostructure lasers with 30°C half‐lives exceeding 1000 h

J. C. Dyment, Robert L. Hartman, M. Kuhn, 1973 .