D. Newman

发表

Defect structure of degraded heterojunction GaAlAs−GaAs lasers

P. Hutchinson, P. Dobson, S. O'Hara, 1975 .

Degradation phenomena in gallium aluminium arsenide stripe geometry lasers

D. Newman, S. Ritchie, 1980 .

Enhanced localized degradation and anomalous emission spectra of Ga1−xAlxAs double heterostructure lasers induced by fabrication processes

D. Newman, A. Goodwin, R. Godfrey, 1976 .

Thermal-resistance models for proton-isolated double-heterostructure lasers

D. Newman, D. H. Newman, D. J. Bond, 1978 .

Gradual degradation of GaAs double-heterostructure lasers

D. Newman, S. Ritchie, 1973 .

Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasers

S. O'Hara, D. Newman, S. Ritchie, 1972 .

V centres produced in KBr and KCl at 290 K by electron irradiation

D. Newman, C. D. Clark, 1971 .

The temperature dependence of degradation mechanisms in long‐lived (GaAl)As DH lasers

B. Wakefield, D. Newman, D. H. Newman, 1978 .

Solid State Devices 1980

D. Newman, 1981 .

Physics of Semiconductor Laser Devices

D. Newman, D. H. Newman, 1980 .

Electron traps and recombination centres in KBr

D. Newman, C. D. Clark, 1969 .

Sources and detectors for optical fibre communications applications: the first 20 years

D. Newman, S. Ritchie, 1986 .