Y. Grange

发表

State of the art in the modelling of SiC sublimation growth

A. Pisch, P. Grosse, M. Pons, 1999 .

Crystal Growth and Scintillation Properties of CeF3

B. Ferrand, M. Couchaud, C. Wyon, 1994 .

Influence of growth conditions on the defect formation in SiC ingots

J. Bluet, P. Grosse, M. Pons, 1999 .

Crystal growth by the thermic screen translation (TST) technique; a modified bridgman method

Y. Grange, H. L. Gal, 1979 .

Research of substituted hexagallate substrates for the epitaxy of hexaferrite films

B. Ferrand, Y. Grange, J. Joubert, 1984 .

Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

B. Ferrand, J. Bluet, P. Grosse, 1999 .

Modelling of SiC sublimation growth process: analyses of macrodefects formation

J. Bluet, P. Grosse, M. Pons, 1999 .