A. Lepore

发表

Electron-Beam ULSI Applications

A. Lepore, 2001 .

Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications

M. Feng, A. Lepore, P. Apostolakis, 1994, IEEE Electron Device Letters.

Multiwavelength DFB Laser Array Transmitters for ONTC Reconfigurable Optical Network Testbed (Invited Paper).

W. C. Young, L. Curtis, Rajaram Bhat, 1996 .

Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications

J. Kruse, D. Barlage, M. Feng, 1993, IEEE Microwave and Guided Wave Letters.

Fabrication and performance of 0.1- mu m gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz

R. C. Tiberio, Lester F. Eastman, Paul J. Tasker, 1988 .

Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper)

P. Tasker, L. Eastman, Young-Kai Chen, 1987 .

0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz

R. C. Tiberio, E. D. Wolf, Lester F. Eastman, 1988 .

Subthreshold current in MODFETs of tenth-micrometer gate

D. Tsui, H. Lee, A. Lepore, 1990, IEEE Electron Device Letters.

Microwave and DC analysis of modfets with gate lengths down to 0.1 micrometer

E. Kohn, K. Hofmann, A. Lepore, 1989 .

Highly sensitive InP-based phase modulators based on stepped quantum wells

J. Abeles, H. Mohseni, Z. Shellenbarger, 2003, Conference on Lasers and Electro-Optics, 2003. CLEO '03..

Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope

Joseph H. Abeles, Jae-Hyung Jang, Ilesanmi Adesida, 2003 .

Indium-phosphide-based microresonator modulators and wavelength multiplexers

T. Lee, J. Abeles, I. Adesida, 2004, Digest of the LEOS Summer Topical Meetings Biophotonics/Optical Interconnects and VLSI Photonics/WBM Microcavities, 2004..

Wavelength selective WDM modulator with high-Q ring resonators in deeply etched InP/InGaAsP waveguides

W. K. Chan, J. Abeles, H. Mohseni, 2004, Conference on Lasers and Electro-Optics, 2004. (CLEO)..

Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's)

P. Tasker, L. Eastman, W. Schaff, 1987, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..

Carrier Beconfinement Limited Velocity in Pseudomorphic AlGa Aslln Cia As Modula tion- Doped Field Effect Transistors

P. Tasker, L. Eastman, W. Schaff, 1987 .

High temperature operation of AlInAs/InGaAs/AlInAs 3D-SMODFETs with record two-dimensional electron gas densities

L. Eastman, A. Lepore, B. Pereiaslavets, 1996, International Electron Devices Meeting. Technical Digest.

Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

Paul J. Tasker, William J. Schaff, L. D. Nguyen, 1988 .

Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Joseph H. Abeles, Jae-Hyung Jang, Ilesanmi Adesida, 2002 .