B. Olson

发表

Time-resolved measurements of charge carrier dynamics and optical nonlinearities in narrow-bandgap semiconductors

B. Olson, 2013 .

Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices

T. F. Boggess, L. M. Murray, B. Olson, 2014 .

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

T. F. Boggess, L. M. Murray, J. Klem, 2012 .

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices

T. F. Boggess, J. Klem, M. Flatté, 2016 .

Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared

Dennis T. Norton, T. F. Boggess, B. Olson, 2011, IEEE Journal of Quantum Electronics.

Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure

J. Klem, B. Olson, E. Shaner, 2016, 1605.02789.

AFRL-RX-WP-JA-2017-0196 STUDY OF MINORITY CARRIER LIFETIMES IN VERY LONG-WAVE INFRARED STRAINED-LAYER InAs / GaInSb SUPERLATTICES ( POSTPRINT )

B. Olson, E. Shaner, G. Brown, 2017 .

Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

J. Klem, M. Flatté, B. Olson, 2016 .

Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure

J. Klem, B. Olson, E. Shaner, 2016, 1605.02789.

Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

M. Goldflam, J. Klem, P. Davids, 2016 .

Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices

John F. Klem, Eric A. Shaner, Michael E. Flatté, 2014 .

Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices

J. Klem, T. Fortune, A. Tauke-Pedretti, 2016 .

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

J. Klem, T. Fortune, A. Tauke-Pedretti, 2015 .

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

John F. Klem, Eric A. Shaner, Michael E. Flatté, 2014 .

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

Christoph H. Grein, John F. Klem, Eric A. Shaner, 2015 .

Nondegenerate two-photon absorption in GaSb

B. Olson, T. Boggess, Michael P. Gehlsen, 2013 .

Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices

Gail J. Brown, Eric A. Shaner, Heather J. Haugan, 2017 .

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices

Gail J. Brown, Heather J. Haugan, Said Elhamri, 2012 .

Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

John F. Klem, Eric A. Shaner, Anna Tauke-Pedretti, 2016 .

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Daniel Wasserman, Runyu Liu, Eric A. Shaner, 2015 .

Vertical Hole Transport and Carrier Localization in InAs /InAs 1 -x Sb x Type-II Superlattice Heterojunction Bipolar Transistors

M. Goldflam, J. Klem, T. Fortune, 2017 .

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

John F. Klem, Eric A. Shaner, Michael E. Flatté, 2015 .