Hideo Ohno

发表

Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

A 3.14 um2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2012, 2012 Symposium on VLSI Circuits (VLSIC).

Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

Tetsuo Endoh, Takahiro Hanyu, Hideo Ohno, 2017 .

A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching

Shoji Ikeda, Yitao Ma, Tetsuo Endoh, 2017 .

Demonstration of a Nonvolatile Processor Core Chip with Software-Controlled Three-Terminal MRAM Cells for Standby-Power Critical Applications

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2013 .

Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2013, IEICE Electron. Express.

Spintronics [Scanning the Issue]

Bernard Dieny, Mark D. Stiles, Hideo Ohno, 2016, Proc. IEEE.

2-2 Recent Trends for Spin-transfer Torque Magnetic Memories, which Break through the Limitation of Silicon Nonvolatile Technology(2. The Forefront of Non-volatile Memory Technology, Cutting-edge Device Technologies in Globally Competitive Fields)

Tetsuo Endoh, Takahiro Hanyu, Takashi Ohsawa, 2012 .

Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2015 .

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

Shoji Ikeda, Takayuki Kawahara, Hiroyuki Yamamoto, 2010, IEEE Journal of Solid-State Circuits.

Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design

Hiroki Koike, Tetsuo Endoh, Takahiro Hanyu, 2016, 2016 IEEE International Symposium on Circuits and Systems (ISCAS).

Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2009, IEICE transactions on electronics.

High-speed simulator including accurate MTJ models for spintronics integrated circuit design

Hiroki Koike, Tetsuo Endoh, Takahiro Hanyu, 2012, 2012 IEEE International Symposium on Circuits and Systems.

Capability of energy selective neutron irradiation test facility (ESNIT) for fusion reactor materials testing and the status of ESNIT program

Hideo Ohno, Kenji Noda, Makoto Sugimoto, 1992 .

Advances in spintronics devices for microelectronics — From spin-transfer torque to spin-orbit torque

Shoji Ikeda, Hideo Sato, Hideo Ohno, 2014, 2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC).

Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip

Shoji Ikeda, Hiroki Koike, Tetsuo Endoh, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

A 1-Mb STT-MRAM with zero-array standby power and 1.5-ns quick wake-up by 8-b fine-grained power gating

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2013, 2013 5th IEEE International Memory Workshop.

SPRAM (SPin-transfer torque RAM) design and its impact on digital systems

Takayuki Kawahara, Hideo Ohno, Riichiro Takemura, 2007, 2007 14th IEEE International Conference on Electronics, Circuits and Systems.

Invited Paper Characterization Of Interfaces Formed By Interrupted OMVPE Growth

Hideki Hasegawa, Hideo Ohno, Eiji Ikeda, 1987, Other Conferences.

12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz

Daisuke Suzuki, Shoji Ikeda, Hiroki Koike, 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).

On sensor image compression

Kiyoharu Aizawa, Takayuki Hamamoto, Hitoshi Maruyama, 1997, IEEE Trans. Circuits Syst. Video Technol..

Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2009, IEICE Trans. Electron..

Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2015 .

Fabrication of a nonvolatile lookup-table circuit chip using magneto/semiconductor-hybrid structure for an immediate-power-up field programmable gate array

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2009, 2009 Symposium on VLSI Circuits.

Probabilistic computing based on spintronics technology

Kerem Y. Camsari, Hideo Ohno, Shunsuke Fukami, 2020, 2020 IEEE Silicon Nanoelectronics Workshop (SNW).

Integer factorization using stochastic magnetic tunnel junctions

Supriyo Datta, Kerem Y. Camsari, Hideo Ohno, 2019, Nature.

Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

A novel image sensor for video compression

Kiyoharu Aizawa, Takayuki Hamamoto, Mitsutoshi Hatori, 1994, Proceedings of 1st International Conference on Image Processing.

Spintronics Materials and Devices for Working Memory Technology

Tetsuo Endoh, Yasuo Ando, Takahiro Hanyu, 2017 .

Analogue spin–orbit torque device for artificial-neural-network-based associative memory operation

Yoshihiko Horio, Shigeo Sato, Hisanao Akima, 2016 .

Studies on read-stability and write-ability of fast access STT-MRAMs

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Electrical magnetization reversal in ferromagnetic semiconductors

Hideo Ohno, Michihiko Yamanouchi, Daichi Chiba, 2004, INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..

A 47.14- $\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

Daisuke Suzuki, Shoji Ikeda, Hiroki Koike, 2019, IEEE Journal of Solid-State Circuits.

Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2014, IEICE Electron. Express.

MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2009, 2009 Design, Automation & Test in Europe Conference & Exhibition.

2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read

Shoji Ikeda, Takayuki Kawahara, Hideo Ohno, 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Daisuke Suzuki, Shoji Ikeda, Hiroki Koike, 2016, Proceedings of the IEEE.

Spin-transfer torque RAM technology: Review and prospect

Takayuki Kawahara, Hideo Ohno, Riichiro Takemura, 2012, Microelectron. Reliab..

Spintronics - From Materials to Circuits -

Hideo Ohno, 2004 .

Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2011, 2011 Symposium on VLSI Circuits - Digest of Technical Papers.

Magnetic tunnel junction for nonvolatile CMOS logic

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2010, 2010 International Electron Devices Meeting.

A 600-μW Ultra-Low-Power Associative Processor for Image Pattern Recognition Employing Magnetic Tunnel Junction (MTJ) Based Nonvolatile Memories with Novel Intelligent Power-Gating (IPG) Scheme

Yitao Ma, Tetsuo Endoh, Takahiro Hanyu, 2015 .

A compact low-power nonvolatile flip-flop using domain-wall-motion-device-based single-ended structure

Daisuke Suzuki, Tetsuo Endoh, Takahiro Hanyu, 2014, IEICE Electronics Express.

High-energy/intensity neutron facilities for testing fusion materials

R. A. Jameson, Hideo Ohno, J. A. Hassberger, 1993 .

Use of analog spintronics device in performing neuro-morphic computing functions

Hideo Ohno, Shunsuke Fukami, William A. Borders, 2017, 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S).

Challenge of MOS/MTJ-hybrid nonvolatile logic-in-memory architecture in dark-silicon era

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2014, 2014 IEEE International Electron Devices Meeting.

MTJ-based nonvolatile logic LSI for ultra low-power and highly dependable computing

Tetsuo Endoh, Takahiro Hanyu, Hideo Ohno, 2018, 2018 China Semiconductor Technology International Conference (CSTIC).

1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times

Shoji Ikeda, Hiroki Koike, Tetsuo Endoh, 2012, 2012 Symposium on VLSI Circuits (VLSIC).

Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2012, 17th Asia and South Pacific Design Automation Conference.

Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2015, IEEE Journal of Solid-State Circuits.

1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance

Shoji Ikeda, Hiroki Koike, Tetsuo Endoh, 2015, 2015 IEEE International Memory Workshop (IMW).

10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects

Hideo Ohno, Shunsuke Fukami, Butsurin Jinnai, 2020 .

A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture

Vincent Gripon, Tetsuo Endoh, Naoya Onizawa, 2014, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories

Shoji Ikeda, Hiroki Koike, Tetsuo Endoh, 2016, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2014, IEICE Electron. Express.

Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

Characterization of spin–orbit torque-controlled synapse device for artificial neural network applications

Hideo Ohno, Shunsuke Fukami, William A. Borders, 2018, Japanese Journal of Applied Physics.

Hardware-aware in-situ Boltzmann machine learning using stochastic magnetic tunnel junctions pdf

Supriyo Datta, Kerem Y. Camsari, Hideo Ohno, 2021, ArXiv.

Hardware-Aware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions

Supriyo Datta, Kerem Y. Camsari, Hideo Ohno, 2021, Physical Review Applied.

Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm

Shoji Ikeda, Hideo Ohno, Shunsuke Fukami, 2014 .

SPIN RELAXATION IN GAAS(110) QUANTUM WELLS

Hideo Ohno, F. Matsukura, H. Ohno, 1999 .

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal-Oxide-Semiconductor Hybrid Structure

Tetsuo Endoh, Takahiro Hanyu, Daisuke Suzuki, 2012 .

Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures

Hideo Ohno, F. Matsukura, Shun Kanai, 2010 .

Electric field control of Skyrmions in magnetic nanodisks

Hideo Ohno, Shunsuke Fukami, Shun Kanai, 2016 .

High-density and low-power nonvolatile static random access memory using spin-transfer-torque magnetic tunnel junction

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2012 .

Antiferromagnetic p-d exchange in ferromagnetic Ga 1-x Mn x As epilayers

Hideo Ohno, Fumihiro Matsukura, Jacek Szczytko, 1999 .

Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014, IEEE Transactions on Magnetics.

Detection of single magnetic bead for biological applications using an InAs quantum-well micro-Hall sensor

Hideo Ohno, Mark Field, Keita Ohtani, 2005 .

Mid-infrared InAs∕AlGaSb superlattice quantum-cascade lasers

Hideo Ohno, Keita Ohtani, Kazuue Fujita, 2005 .

Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure.

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, Journal of applied physics.

Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

Hideki Hasegawa, Hideo Ohno, H. Ohno, 1986 .

Ferromagnetic III–V and II–VI Semiconductors

Tomasz Dietl, Hideo Ohno, H. Ohno, 2003 .

Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2009 .

InAs/AlSb quantum cascade lasers operating at 10 μm

Hideo Ohno, Keita Ohtani, H. Ohno, 2003 .

Quantum Hall Effect in Polar Oxide Heterostructures

Masashi Kawasaki, Akira Ohtomo, Hideo Ohno, 2007, Science.

Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2012 .

Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures

Hideo Ohno, Daichi Chiba, Fumihiro Matsukura, 2000 .

Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

Paul Crozat, Shoji Ikeda, Claude Chappert, 2011 .

RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI

Shoji Ikeda, Hideo Ohno, Shunsuke Fukami, 2012 .

Effect of barrier width on the performance of quantum well infrared photodetector

M. Buchanan, Hideo Ohno, E. H. Li, 2001 .

Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

Hideo Ohno, F. Matsukura, Jun Hayakawa, 2006 .

Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer

Shoji Ikeda, Hideo Ohno, Fumihiro Matsukura, 2006 .

Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures

Hideo Ohno, Shunsuke Fukami, Seiji Mitani, 2012 .

Control of magnetism by electric fields.

Hideo Ohno, Yoshinori Tokura, Fumihiro Matsukura, 2015, Nature nanotechnology.

Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis

Hideo Ohno, Shunsuke Fukami, Fumihiro Matsukura, 2015 .

Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions

Hideo Ohno, Hisao Yamamoto, Katsuya Miura, 2010 .

Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature

Shoji Ikeda, Hideo Ohno, Fumihiro Matsukura, 2005 .

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

Hideo Ohno, Fumihiro Matsukura, H. Ohno, 2013, Nature Communications.

Ferromagnetic semiconductor heterostructures

Hideo Ohno, H. Ohno, 2004 .

Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2011 .

Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control

Colin E. C. Wood, Lester F. Eastman, J. Barnard, 1981, IEEE Electron Device Letters.

Dilute ferromagnetic semiconductors: Physics and spintronic structures

Tomasz Dietl, Hideo Ohno, H. Ohno, 2013, 1307.3429.

High Mobility Thin Film Transistors with Transparent ZnO Channels

Masashi Kawasaki, Akira Ohtomo, Hideo Ohno, 2003 .

Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate

Chennupati Jagadish, Li Li, Rongkun Zheng, 2012 .

A sub-ns three-terminal spin-orbit torque induced switching device

Hideo Ohno, Shunsuke Fukami, Chaoliang Zhang, 2016, 2016 IEEE Symposium on VLSI Technology.

Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance

Hideo Ohno, Shunsuke Fukami, Chaoliang Zhang, 2019, Applied Physics Letters.

Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magn

Shoji Ikeda, Hideo Ohno, Fumihiro Matsukura, 2006, cond-mat/0610526.

Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance

Shoji Ikeda, Hideo Ohno, Michihiko Yamanouchi, 2014 .

Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire

Hideo Ohno, Shunsuke Fukami, Nobuyuki Ishiwata, 2011 .

Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy

Shoji Ikeda, Hideo Ohno, Albrecht Jander, 2011, IEEE Magnetics Letters.

Toward Functional Spintronics

Hideo Ohno, H. Ohno, H. Ohno, 2001, Science.

Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance

Hideo Ohno, Fumihiro Matsukura, Shun Kanai, 2016 .

Electrical endurance of Co/Ni wire for magnetic domain wall motion device

Shoji Ikeda, Hiroaki Honjo, Keizo Kinoshita, 2013 .

Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements

Hideo Ohno, Michihiko Yamanouchi, Masamitsu Hayashi, 2014 .

Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

S. Ikeda, Hideo Ohno, F. Matsukura, 2007 .

Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

Shoji Ikeda, Hideo Ohno, Michihiko Yamanouchi, 2014 .

Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme

Shoji Ikeda, Tetsuo Endoh, Takahiro Hanyu, 2012 .

Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

Hideo Ohno, Shunsuke Fukami, J. Llandro, 2017 .

Dual-band photodetectors based on interband and intersubband transitions

M. Buchanan, Z. R. Wasilewski, P. H. Wilson, 2001 .

Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in ( Ga 1 − x Mn x ) As

Hideo Ohno, Bernd Beschoten, Paul A. Crowell, 1999 .

Electrical spin injection in ferromagnetic//nonmagnetic semiconductor heterostructures

Hideo Ohno, Bernd Beschoten, Fumihiro Matsukura, 2001 .

Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing

Mohammad Zahedinejad, Hideo Ohno, Johan Åkerman, 2020, Nature Materials.

Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer

Shoji Ikeda, Hideo Ohno, Fumihiro Matsukura, 2006, cond-mat/0606503.

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering

Shoji Ikeda, Hideo Ohno, Fumihiro Matsukura, 2005, cond-mat/0510531.

InP MISFET's with Al 2 O 3 /Native Oxide double-layer gate insulators

Hideki Hasegawa, Hideo Ohno, Takayuki Sawada, 1984 .

Electron spin relaxation beyond D'yakonov–Perel’ interaction in GaAs/AlGaAs quantum wells

Hideo Ohno, Fumihiro Matsukura, H. Ohno, 2000 .

Electric double layer transistor with a (Ga,Mn)As channel

Hideo Ohno, Daichi Chiba, Hidekazu Shimotani, 2010 .

Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014 .

Intersubband transitions in ZnO multiple quantum wells

Hideo Ohno, Keita Ohtani, H. Ohno, 2008 .

Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

Tetsuo Endoh, Takahiro Hanyu, Takashi Ohsawa, 2014 .

In-plane magnetic field dependence of electric field-induced magnetization switching

Shoji Ikeda, Hideo Ohno, Michihiko Yamanouchi, 2013 .

Domain Wall Motion Device for Nonvolatile Memory and Logic — Size Dependence of Device Properties

Shoji Ikeda, Hideo Ohno, Shunsuke Fukami, 2014, IEEE Transactions on Magnetics.

Perspective: Spintronic synapse for artificial neural network

Hideo Ohno, Shunsuke Fukami, H. Ohno, 2018, Journal of Applied Physics.

Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs

Shoji Ikeda, Hiroaki Honjo, Hideo Sato, 2014 .

High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels

Masashi Kawasaki, Akira Ohtomo, Hideo Ohno, 2005 .

Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

Hideo Ohno, Daichi Chiba, Fumihiro Matsukura, 2004 .

Two-barrier stability that allows low-power operation in current-induced domain-wall motion

Hideo Ohno, Shunsuke Fukami, Michihiko Yamanouchi, 2013, Nature Communications.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field

Hideo Ohno, Keita Ohtani, H. Ohno, 2012, Nature Communications.

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

Shoji Ikeda, Tetsuo Endoh, Kazuyuki Hirose, 2013, IEEE Transactions on Nuclear Science.

High-speed photoconductive detectors using GaInAs

Hideo Ohno, J. Gammel, J. Ballantyne, 1981 .

An InAs-Based Intersubband Quantum Cascade Laser

Hideo Ohno, Keita Ohtani, H. Ohno, 2002 .

Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

Shoji Ikeda, Hideo Ohno, Fumihiro Matsukura, 2007 .

Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields

Hideo Ohno, Shunsuke Fukami, Michihiko Yamanouchi, 2012 .

Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures

Hideo Ohno, Shunsuke Fukami, Aleksandr Kurenkov, 2017 .

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

Shoji Ikeda, Tetsuo Endoh, Hiroaki Honjo, 2015 .

Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

Hiroaki Honjo, Hideo Ohno, Sadahiko Miura, 2012 .

Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper

Shoji Ikeda, Hideo Ohno, Shunsuke Fukami, 2013 .

Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors.

Hideo Ohno, Jing Shi, Daichi Chiba, 2008, Physical review letters.

Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited)

Paul Crozat, Claude Chappert, Hideo Ohno, 2008 .

Design of a Process-Variation-Aware Nonvolatile MTJ-Based Lookup-Table Circuit

Takahiro Hanyu, Daisuke Suzuki, Masanori Natsui, 2010 .

Fine-Grained Power-Gating Scheme of a Metal–Oxide–Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2010 .

Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis

Shoji Ikeda, Hideo Ohno, Hiroshi Sato, 2014 .

Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate

Tao Wang, Hideo Ohno, Shiro Sakai, 1999 .

CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

Shoji Ikeda, Hideo Ohno, Katsuya Miura, 2010 .

Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions

Shoji Ikeda, Hiroaki Honjo, Keizo Kinoshita, 2012 .