Lin Cheng

发表

22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

A. Huang, J. Palmour, C. Scozzie, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors

J. Palmour, M. Levinshtein, Lin Cheng, 2014 .

Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

M. Shur, A. Agarwal, J. Palmour, 2012 .

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, International Symposium on Power Semiconductor Devices and IC's.

High performance, ultra high voltage 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Development of 15 kV 4H-SiC IGBTs

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2012 .

Safe Operating Area and Long-Term Reliability of 9-kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

Stephen B. Bayne, Lin Cheng, Kevin Lawson, 2014, IEEE Electron Device Letters.

DV/DT immunity and recovery time capability of 1.0 cm2 silicon carbide SGTO

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

David Grider, Lin Cheng, John W. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

High switching performance of 1.7kV, 50A SiC power MOSFET over Si IGBT for advanced power conversion applications

Subhashish Bhattacharya, Ankan De, Lin Cheng, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications

Janna R. B. Casady, J. Casady, M. Mazzola, 2006 .

Novel packaging and high-current pulse-switching of 1.0 cm2 SiC SGTOs

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 Lester Eastman Conference on High Performance Devices (LEC).

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

Scalable SiC Power Switches for Applications in More Electric Vehicles (Preprint)

Michael S. Mazzola, Lin Cheng, Volodymyr Bondarenko, 2007 .

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Michael S. Mazzola, John D. Cressler, Yaroslav Koshka, 2005 .

SiC symmetric blocking terminations using orthogonal positive bevel termination and Junction Termination Extension

Alex Q. Huang, Lin Cheng, B. Jayant Baliga, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

A. Agarwal, S. Ryu, J. Richmond, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

S. Ryu, A. Hefner, J. Palmour, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor

A. Huang, J. Palmour, C. Scozzie, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

A. Agarwal, J. Palmour, M. O'loughlin, 2013 .

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Alex Q. Huang, David E. Grider, Lin Cheng, 2014 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications

J. Scofield, D. Sheridan, M. Mazzola, 2008 .

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Michael S. Mazzola, Lin Cheng, Volodymyr Bondarenko, 2008 .

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

C. Scozzie, S. Bayne, Lin Cheng, 2015, 2015 IEEE Pulsed Power Conference (PPC).

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

A. Agarwal, J. Palmour, M. O'loughlin, 2014, Journal of Electronic Materials.

High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Scott Allen, Lin Cheng, Anant K. Agarwal, 2015 .

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

S. Dhar, A. Agarwal, J. Palmour, 2014 .

Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C

Lin Cheng, Anant K. Agarwal, Sei-Hyung Ryu, 2012, Journal of Electronic Materials.

High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

B. Hull, J. Palmour, S. Allen, 2016, IEEE Transactions on Power Electronics.

Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC

J. Palmour, D. Lichtenwalner, C. Scozzie, 2014 .

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Stephen B. Bayne, Lin Cheng, Argenis Bilbao, 2015, IEEE Transactions on Power Electronics.

Next-Generation Planar SiC MOSFETs from 900 V to 15 kV

S. Ryu, B. Hull, J. Richmond, 2015 .

3300 V, 30 A 4H-SiC power DMOSFETs

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Semiconductor Device Research Symposium.

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

C. Scozzie, S. Bayne, Lin Cheng, 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2012 .