A. Ogunniyi

发表

22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

A. Huang, J. Palmour, C. Scozzie, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n, Schottky, and JBS Diodes Under High Current Density Pulsed Operation

S. Bayne, A. Ogunniyi, B. Pushpakaran, 2017, IEEE Transactions on Plasma Science.

Failure Modes of 15-kV SiC SGTO Thyristors During Repetitive Extreme Pulsed Overcurrent Conditions

M. Giesselmann, S. Bayne, W. Ray, 2016, IEEE Transactions on Power Electronics.

Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching

S. Bayne, A. Ogunniyi, B. Pushpakaran, 2016 .

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

J. Suehle, N. Goldsman, M. Gurfinkel, 2008, IEEE Transactions on Electron Devices.

Safe Operating Area and Long-Term Reliability of 9-kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

Stephen B. Bayne, Lin Cheng, Kevin Lawson, 2014, IEEE Electron Device Letters.

DV/DT immunity and recovery time capability of 1.0 cm2 silicon carbide SGTO

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

Development and pulse evaluation of silicon carbide SGTO modules

A. Agarwal, Qingchun Zhang, C. Scozzie, 2010, 2010 IEEE International Power Modulator and High Voltage Conference.

Wide-pulse evaluation of 0.5 cm2 silicon carbide SGTO

A. Agarwal, C. Scozzie, V. Temple, 2009, 2009 IEEE Pulsed Power Conference.

Performance Comparison of Commercial Gan Hemt under Repetitive Overcurrent Operations

S. Bayne, H. O’Brien, A. Ogunniyi, 2019, 2019 IEEE Pulsed Power & Plasma Science (PPPS).

Novel packaging and high-current pulse-switching of 1.0 cm2 SiC SGTOs

A. Agarwal, C. Scozzie, V. Temple, 2012, 2012 Lester Eastman Conference on High Performance Devices (LEC).

Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications

B. Hull, A. Lelis, A. Ogunniyi, 2008 .

Time dependence of bias-stress induced threshold-voltage instability measurements

N. Goldsman, M. Gurfinkel, J. Suehle, 2007, 2007 International Semiconductor Device Research Symposium.

Performance of 18-kV Silicon Carbide High-Voltage Boost-Chopper Modules

H. O’Brien, A. Ogunniyi, M. Hinojosa, 2019, 2019 IEEE Pulsed Power & Plasma Science (PPPS).

Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

C. Scozzie, S. Bayne, H. O’Brien, 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

Electro-Thermal TCAD Model for 22 kV Silicon Carbide IGBTs

S. Ryu, E. van Brunt, S. Bayne, 2016 .

Electro-thermal transient simulation of silicon carbide power MOSFET

S. Bayne, A. Ogunniyi, B. Pushpakaran, 2013, 2013 19th IEEE Pulsed Power Conference (PPC).

Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching

S. Bayne, A. Ogunniyi, B. Pushpakaran, 2015, Journal of Computational Electronics.

SiC super GTO thyristor technology development: Present status and future perspective

Heather O'Brien, Aderinto Ogunniyi, C. Capell, 2011, 2011 IEEE Pulsed Power Conference.

Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

H. O'Brien, C. Scozzie, C. Capell, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Turn-ON of High-Voltage SiC Thyristors for Fast-Switching Applications

S. Ryu, H. O’Brien, A. Ogunniyi, 2016, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Development of SiC multi-chip module for pulse switching at 10 kV, 100 kA

C. Scozzie, V. Temple, H. O’Brien, 2015, 2015 IEEE Pulsed Power Conference (PPC).

High voltage, step-down converter design using 20-kV silicon carbide IGBTs

A. Ogunniyi, M. Hinojosa, 2016, 2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

Solid-state Marx generator with 24 KV 4H-SIC IGBTs

E. van Brunt, C. Scozzie, H. O’Brien, 2015, IEEE International Pulsed Power Conference.

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

An open circuit voltage decay system for performing injection dependent lifetime spectroscopy.

S. Bayne, H. O’Brien, A. Ogunniyi, 2017, The Review of scientific instruments.

Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

C. Scozzie, S. Bayne, Lin Cheng, 2015, 2015 IEEE Pulsed Power Conference (PPC).

Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

S. Bayne, H. O’Brien, A. Ogunniyi, 2020, IEEE Transactions on Plasma Science.

Wide injection range OCVD system for lifetime spectroscopy techniques

S. Bayne, H. O’Brien, A. Ogunniyi, 2017, 2017 IEEE 21st International Conference on Pulsed Power (PPC).

The benefits and current progress of SiC SGTOs for pulse power applications

A. Agarwal, R. Callanan, C. Scozzie, 2009, 2009 International Semiconductor Device Research Symposium.

Design Comparison of Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) for Linear-Mode Operation

B. Hull, H. O’Brien, A. Ogunniyi, 2019 .

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

C. Scozzie, S. Bayne, Lin Cheng, 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

SiC MOSFETs designed and evaluated for linear mode operation

B. Hull, Qingchun Zhang, H. O’Brien, 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.

Sub-Millisecond Transient Analysis of High Voltage SiC MOSFET and High Voltage SiC IGBT

A. Ogunniyi, M. Hinojosa, Heather O’Brien, 2023, 2023 IEEE Pulsed Power Conference (PPC).

Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

C. Scozzie, S. Bayne, H. O’Brien, 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).