C. Capell

发表

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

J. Richmond, R. Callanan, M. Das, 2008 .

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

A. Agarwal, J. Richmond, J. Palmour, 2010 .

9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

J. Richmond, R. Callanan, J. Palmour, 2009, 2009 IEEE Pulsed Power Conference.

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, International Symposium on Power Semiconductor Devices and IC's.

900V silicon carbide MOSFETs for breakthrough power supply design

A. Barkley, J. Casady, S. Ryu, 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

High performance, ultra high voltage 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Development of 15 kV 4H-SiC IGBTs

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2012 .

1000-V, 30-A 4H-SiC BJTs with high current gain

S. Bayne, C. Scozzie, S. Balachandran, 2005, IEEE Electron Device Letters.

Power amplification in UHF band using SiC RF power BJTs

A. Agarwal, J. Palmour, C. Capell, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Recent progress in SiC bipolar junction transistors

S. Bayne, C. Scozzie, Sei-Hyung Ryu, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

Ultra high voltage MOS controlled 4H-SiC power switching devices

C. W. Tipton, J. Casady, S. Ryu, 2015 .

SiC symmetric blocking terminations using orthogonal positive bevel termination and Junction Termination Extension

Alex Q. Huang, Lin Cheng, B. Jayant Baliga, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

A. Agarwal, T. Chow, S. Ryu, 2005 .

SiC BJT Technology for Power Switching and RF Applications

A. Agarwal, T. Chow, S. Ryu, 2004 .

SiC BJT's for High Power Switching and RF Applications

A. Agarwal, S. Ryu, J. Richmond, 2002 .

SiC super GTO thyristor technology development: Present status and future perspective

Heather O'Brien, Aderinto Ogunniyi, C. Capell, 2011, 2011 IEEE Pulsed Power Conference.

Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

H. O'Brien, C. Scozzie, C. Capell, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

A. Agarwal, R. Callanan, J. Palmour, 2008 .

A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules

A. Agarwal, S. Ryu, S. Krishnaswami, 2006 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors

Anant Agarwal, Robert M. Kennedy, Tangali S. Sudarshan, 2009, Microelectron. Reliab..

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

David E. Grider, Allen Hefner, Scott Leslie, 2011, 2011 IEEE Energy Conversion Congress and Exposition.

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Anant K. Agarwal, Robert Callanan, Charles Scozzie, 2008 .

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.

9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

Anant K. Agarwal, John W. Palmour, Robert Callanan, 2010 .