C. Jonas

发表

22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

S. Ryu, J. Richmond, J. Palmour, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

J. Richmond, R. Callanan, M. Das, 2008 .

Design and Fabrications of High Voltage IGBTs on 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

A. Agarwal, J. Palmour, J. Sumakeris, 2008 .

Design and Characterization of High-Voltage 4H-SiC p-IGBTs

A. Agarwal, A. Huang, S. Ryu, 2008, IEEE Transactions on Electron Devices.

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, International Symposium on Power Semiconductor Devices and IC's.

900V silicon carbide MOSFETs for breakthrough power supply design

A. Barkley, J. Casady, S. Ryu, 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

High performance, ultra high voltage 4H-SiC IGBTs

A. Agarwal, S. Ryu, A. Hefner, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Development of 15 kV 4H-SiC IGBTs

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2012 .

15 kV IGBTs in 4H-SiC

A. Agarwal, S. Ryu, J. Richmond, 2013 .

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

A. Agarwal, S. Ryu, M. Das, 2007 .

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

A. Agarwal, S. Ryu, J. Palmour, 2006 .

Ultra high voltage MOS controlled 4H-SiC power switching devices

C. W. Tipton, J. Casady, S. Ryu, 2015 .

950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

A. Agarwal, S. Ryu, J. Richmond, 2006 .

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

A. Agarwal, R. Callanan, J. Palmour, 2008 .

16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

A. Agarwal, J. Richmond, J. Palmour, 2013 .

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with R diff, on of 26 mΩ·cm 2 at 25°C

A. Agarwal, A. Huang, S. Ryu, 2007, ISPSD 2007.

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Anant K. Agarwal, Robert Callanan, Charles Scozzie, 2008 .

Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices

S. Ryu, M. Das, C. Jonas, 2007 .

3300 V, 30 A 4H-SiC power DMOSFETs

S. Dhar, A. Agarwal, S. Ryu, 2009, 2009 International Semiconductor Device Research Symposium.

Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes

J. Casady, S. Ryu, B. Hull, 2018, Materials Science Forum.

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

J. Casady, S. Ryu, B. Hull, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

15 kV n-GTOs in 4H-SiC

J. Casady, S. Ryu, B. Hull, 2019, Materials Science Forum.