S. Haney

发表

A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching

J. Richmond, R. Callanan, M. Das, 2008 .

The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs

A. Agarwal, S. Haney, 2008 .

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal

J. Scofield, S. Krishnaswami, B. Hull, 2006 .

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Sei-Hyung Ryu, A. Agarwal, S. Ryu, 2007, IEEE Electron Device Letters.

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

P. McMarr, K. Hobart, R. Stahlbush, 2010 .

Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

P. McMarr, K. Hobart, R. Stahlbush, 2009, 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC).

Some Critical Materials and Processing Issues in SiC Power Devices

A. Agarwal, S. Haney, 2008 .

Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations

A. Agarwal, S. Ryu, Qingchun Zhang, 2008 .

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

A. Agarwal, P. McMarr, H. Hughes, 2010 .

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

S. Dhar, A. Agarwal, K. Cheung, 2010 .

SiC MOSFET Reliability Update

Jim Richmond, Zoltan Ring, Mrinal K. Das, 2012 .

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

A. Agarwal, V. Misra, D. Lichtenwalner, 2013 .

Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs

S. Dhar, A. Agarwal, S. Ryu, 2008 .

Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices

S. Ryu, M. Das, C. Jonas, 2007 .

Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

C. L. Reynolds, Aivars J. Lelis, Sei-Hyung Ryu, 2009 .

Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

Anant K. Agarwal, Robert E. Stahlbush, Fatima Husna, 2008 .