H. Pu

发表

Demonstration of 4H-SiC Thyristor Triggered by 100-mW/cm2 UV Light

Xi Wang, H. Pu, Qing Liu, 2020, IEEE Electron Device Letters.

A high di/dt 4H-SiC thyristor with ‘ -shaped’ n-base

Xi Wang, H. Pu, Qing Liu, 2019, Semiconductor Science and Technology.

Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time

Xi Wang, H. Pu, Qing Liu, 2019, Chinese Physics B.

Improved turn-on characteristics of 4H SiC asymmetrical thyristor with double epitaxial n-base

Xi Wang, H. Pu, Qing Liu, 2019, Superlattices and Microstructures.

4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate

Xi Wang, H. Pu, Qing Liu, 2018, Superlattices and Microstructures.

4H-SiC Light Triggered Thyristor with Gradually Doped Thin n-base

Xi Wang, H. Pu, Qing Liu, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate

Jichao Hu, Xi Wang, H. Pu, 2018, Materials Letters.

Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

Xi Wang, H. Pu, Qing Liu, 2018, Chinese Physics B.

Injection modulation of p + –n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base

Xi Wang, H. Pu, Qing Liu, 2017 .

Influence of Different Surface Passivation on Photoelectric Properties PbS QDs

Xu Bei, H. Pu, Chunlan Chen, 2021, Journal of Physics: Conference Series.

Study of a new type nominal “washboard-like” triangular defects in 4H-SiC 4° off-axis (0 0 0 1) Si-face homoepitaxial layers

Renxu Jia, Jichao Hu, H. Pu, 2019, Journal of Crystal Growth.

A facile way for fabrication of nano-sized p-NiO/n-SiC heterojunction using sol–gel technique

Xi Wang, H. Pu, Y. Zang, 2019 .

Determination of the interface band alignment of NiO/4H-SiC heterojunction for photodetector application

Xi Wang, H. Pu, Chunlan Chen, 2020 .

Effect of Processing Parameters on Monolayer MoS2 Prepared by APCVD in a Quasiclosed Crucible

Jichao Hu, Tao Lin, H. Pu, 2019, Journal of Electronic Materials.

Synthesis and characterization of monolayer Er-doped MoS2 films by chemical vapor deposition

H. Pu, Y. Zang, Yong Yang, 2018, Scripta Materialia.

Study of the Bonding Characteristics at β-Ga2O3(201)/4H-SiC(0001) Interfaces from First Principles and Experiment

Jichao Hu, Xi Wang, H. Pu, 2023, Crystals.

Investigation of the interface electronic characteristics of β-Ga2O3 (100)/4H-SiC (0001)

Jichao Hu, Xi Wang, H. Pu, 2022, Journal of Crystal Growth.

TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires

Jichao Hu, H. Pu, Y. Zang, 2022, Materials.

The influence of exposed surface on trap state of PbS quantum dots

Jichao Hu, H. Pu, Chunlan Chen, 2020, Superlattices and Microstructures.

Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip

Jichao Hu, Xi Wang, H. Pu, 2021, Journal of Semiconductors.

Morphology engineering of MoS2 nanostructures by controlling MoO3−x concentration using a quasi-closed crucible

Xi Wang, H. Pu, Y. Zang, 2018, Chemical Physics.

Influences of temperature gradient and distance on the morphologies of MoS2 domains

Jichao Hu, H. Pu, Y. Zang, 2018, AIP Advances.

Growth of monolayer MoS 2 films in a quasi-closed crucible encapsulated substrates by chemical vapor deposition

Tao Lin, H. Pu, Yong Yang, 2017 .

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunctions

H. Pu, Zhiming Chen, Xin He, 2013 .

Evidence of Responsivity and Breakdown Voltage Improvement in SiCGe/SiC Phototransistor with Charge Compensation Layer

H. Pu, Zhi Chen, S. Zhou, 2010 .

Accurate estimation of thermal properties for AlGaN/GaN HEMTs on diamond

Chao Zhang, Xi Wang, H. Pu, 2022, AIP Advances.

Graphene as transparent electrode in Si solar cells: A dry transfer method

Jichao Hu, H. Pu, Y. Zang, 2018, AIP Advances.

Step Flow Growth of β-Ga2O3 Films on Off-axis 4H-SiC Substrates by LPCVD

Renxu Jia, Jichao Hu, Chao Zhang, 2023, Surfaces and Interfaces.

Thermal Analysis of AlGaN/GaN HEMTs Considering Anisotropic And Inhomogeneous Thermal Conductivity

H. Pu, Qun Li, Yao Li, 2021 .

Physical models for MoS2 and their application to simulations of MoS2 MSM device

H. Pu, Yong Yang, Shan Zhang, 2018 .

Fabrication and Investigation of NiOx MSM Structure on 4H-SiC Substrate

Jichao Hu, Xi Wang, H. Pu, 2021, 2021 IEEE 4th International Conference on Electronics Technology (ICET).

Adsorption characteristics composition of Ge and Si on 4H-SiC(0 0 0 1) surface

Jichao Hu, H. Pu, Yi Liang, 2020 .

Epitaxial growth of cubic silicon carbide on silicon by sublimation method

H. Pu, Zhiming Chen, Jianping Ma, 2003 .

SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

Bingshan Liu, Xi Wang, H. Pu, 2020 .

Growth of graphene/Ge/Si heterostructure on Si(0 0 1) substrate

H. Pu, Y. Zang, Lianbi Li, 2017 .

Influence of Acceptor Incomplete Ionization in p+ Emitter on SiC LTT with n-Type Blocking Base

Xi Wang, H. Pu, Mingye Qiu, 2023, Key Engineering Materials.

Influence of p- blocking base carrier lifetime on characteristics of SiC light-triggered thyristor

Qing Liu, Xi Wang, Hongbin Pu, 2019, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Enhanced Breakdown Strength by Ion Substitution in Lead-free BaTi0.895Sn0.105O3–based Ceramics

Li He, Jianhong Wang, Hongbin Pu, 2019, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).