P. Ivanov

发表

Transient collector modulation of 4H–SiC BJTs during switch-on process

J. Palmour, M. Levinshtein, V. Yuferev, 2016 .

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

J. Palmour, M. Levinshtein, Ranbir Singh, 1999 .

Temperature dependence of turn-on processes in 4H–SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2001 .

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

J. Palmour, M. Levinshtein, Ranbir Singh, 2001 .

Current rise time constants in switch-on process of SiC thyristors

A. G. Tandoev, A. Agarwal, J. Palmour, 2002 .

Steady-state and transient characteristics of 10 kV 4H-SiC diodes

J. Palmour, M. Levinshtein, Ranbir Singh, 2004 .

High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes

V. A. Krivutsa, B. Hull, M. Das, 2005 .

Power bipolar devices based on silicon carbide

A. Agarwal, J. Palmour, M. Levinshtein, 2005 .

High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime

B. Hull, M. Das, J. Palmour, 2006 .

Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor

A. Agarwal, S. Ryu, J. Palmour, 2001 .

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

A. Agarwal, S. Krishnaswami, J. Palmour, 2006, IEEE Transactions on Electron Devices.

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

M. Shur, A. Agarwal, S. Ryu, 2009 .

Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor

M. E. Levinshtein, A. Agarwal, J. Palmour, 2001 .

Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode

Y. Zadiranov, P. Ivanov, A. Potapov, 2020 .

High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings

I. Grekhov, P. Ivanov, A. Potapov, 2009 .

High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction

I. Grekhov, P. Ivanov, A. Potapov, 2008 .

High voltage SiC diodes with small recovery time

Pavel Ivanov, Michael E. Levinshtein, S. N. Yurkov, 2000 .

Direct bonding of silicon carbide wafers with a regular relief at the interface

L. S. Kostina, I. Grekhov, J. Je, 2006 .

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

A. Agarwal, S. Ryu, J. Palmour, 2004 .

Surge current capabilities and isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

J. Palmour, M. Levinshtein, Q. Zhang, 2015 .

1/f noise in forward biased high voltage 4H-SiC Schottky diodes

N. M. Shmidt, J. Palmour, M. Levinshtein, 2014 .

Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in SiC structures

I. Grekhov, P. Ivanov, P. Rodin, 2006 .

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

M. Shur, B. Hull, M. Das, 2008 .

Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

M. Levinshtein, G. Simin, M. Khan, 2003 .

Impact of Proton Irradiation on Power 4H-SiC MOSFETs

M. E. Levinshtein, L. Fursin, A. Lebedev, 2019 .

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs

L. Fursin, M. Levinshtein, A. Lebedev, 2019, Semiconductors.

Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding

L. S. Kostina, I. Grekhov, P. Ivanov, 2007 .

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

A. Agarwal, M. Das, J. Palmour, 2004 .

Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base

I. Grekhov, A. Konstantinov, P. Ivanov, 2003 .

Gas sensitivity of silicon carbide-based diode structures

P. Ivanov, A. Terent'ev, V. Filippov, 1999 .

Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes

P. Ivanov, A. Potapov, T. P. Samsonova, 2018, Semiconductors.

Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode

I. Grekhov, P. Ivanov, A. Potapov, 2017 .

Transient processes in high-voltage silicon carbide bipolar-junction transistors

A. Agarwal, J. Palmour, M. Levinshtein, 2013 .

Excess leakage currents in high-voltage 4H-SiC Schottky diodes

I. Grekhov, P. Ivanov, A. Potapov, 2010 .

Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

I. Grekhov, P. Ivanov, A. Potapov, 2016 .

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

P. Ivanov, A. Potapov, T. P. Samsonova, 2016 .

Isothermal current–voltage characteristics of high-voltage silicon carbide rectifier p–i–n diodes at very high current densities

B. Hull, M. Das, J. Palmour, 2007 .

Current-voltage characteristics of electroluminescent Me/(a-Si:H):Er/c-Si structures prepared by magnetron sputtering

E. Terukov, P. Ivanov, O. Kon’kov, 2000 .

On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 1998 .

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

I. Grekhov, P. Ivanov, A. Potapov, 2013 .

SiC-based phototransistor with a tunnel MOS emitter

A. F. Shulekin, I. Grekhov, M. Vexler, 1999 .

High hole lifetime (3.8 /spl mu/s) in 4H-SiC diodes with 5.5 kV blocking voltage

J. Palmour, M. Levinshtein, O. Kordina, 1999 .

Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode

J. Palmour, M. Levinshtein, V. Yuferev, 2017 .

High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

I. Grekhov, P. Ivanov, 2015 .

Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse

B. Hull, M. Das, J. Palmour, 2008 .

The critical charge density in high voltage 4H-SiC thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2003 .

On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel

P. Ivanov, 2018 .

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

Y. Zadiranov, P. Ivanov, N. Il'inskaya, 2021 .

Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling

P. Ivanov, N. Il'inskaya, N. Lebedeva, 2020 .

Parameters of silicon carbide diode avalanche shapers for the picosecond range

I. Grekhov, P. Ivanov, M. Ivanov, 2016 .

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

M. Das, J. Palmour, M. Levinshtein, 2005 .

Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime

A. Agarwal, J. Palmour, M. Levinshtein, 2004 .

Parameters of Electron-Hole Scattering in Silicon Carbide

A. G. Tandoev, J. Palmour, M. Levinshtein, 2003 .

Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

M. Shur, A. Agarwal, S. Ryu, 2001 .

Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

V. A. Krivutsa, B. Hull, M. Das, 2006 .

Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction

I. Grekhov, P. Ivanov, A. Potapov, 2008 .

“Ideal” static breakdown in high-voltage (1 kV) 4H-SiCp-n junction diodes with guard ring termination

I. Grekhov, P. Ivanov, N. Il'inskaya, 2005 .

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

P. Ivanov, A. Potapov, M. F. Kudoyarov, 2016, Semiconductors.

Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

I. Grekhov, P. Ivanov, A. Potapov, 2016, Semiconductors.

Promotion of metallurgical reactions at the Ni-SiC interface by irradiation with protons

P. Ivanov, V. Lomasov, V. Kozlovskiĭ, 2004 .

Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p+-p-n+ diodes: Effect of impurity breakdown in the p-type base

P. Ivanov, A. Potapov, T. Samsonova, 2012 .

Bistable low temperature (77 K) impurity breakdown in p-type 4H-SiC

P. Ivanov, A. Potapov, T. Samsonova, 2010 .

Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC

P. Ivanov, A. Potapov, T. Samsonova, 2009 .

Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator

A. F. Shulekin, I. Grekhov, P. Ivanov, 1998 .

Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

L. Fursin, A. Lebedev, P. Ivanov, 2019, Semiconductor Science and Technology.

Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes

I. Grekhov, S. Korotkov, A. Konstantinov, 2003 .

SiC-based electronics (100th anniversary of the Ioffe Institute)

A. Lebedev, P. Ivanov, P. Baranov, 2018, Physics-Uspekhi.

High-voltage operation of field-effect transistors in silicon carbide

N. Nordell, P. Ivanov, S. Karlsson, 1997, IEEE Electron Device Letters.

Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study

I. V. Ilyin, P. Ivanov, B. Ber, 2007 .

Noise spectroscopy of local surface levels in semiconductors

J. Palmour, M. Levinshtein, S. Rumyantsev, 2000 .

A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation

P. Ivanov, A. Potapov, N. Sleptsuk, 2011 .

Ion-beam mixing at Ni/n-6H–SiC interface under irradiation by H+-ions

I. Grekhov, P. Ivanov, V. Lomasov, 2004 .

Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors

M. Shur, N. Pala, X. Hu, 2002 .

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

M. Shur, N. Pala, M. Levinshtein, 2001, The Random and Fluctuating World.

Drift mobility of electrons in AlGaN/GaN MOSHFET

M. Shur, M. Levinshtein, G. Simin, 2001 .

The impact of parasitic inductance on the dV/dt ruggedness of 4H-SiC Schottky diodes

M. Levinshtein, P. Ivanov, 2021, Microelectronics Reliability.

Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes

M. Levinshtein, A. Lebedev, P. Ivanov, 2019, Semiconductors.

Leakage currents in 4H-SiC JBS diodes

I. Grekhov, P. Ivanov, A. Potapov, 2012 .

Self-heating and loss of thermal stability under a single current surge pulse in high-voltage 4H-SiC rectifier diodes

B. Hull, M. Das, J. Palmour, 2008 .

Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes

B. Hull, M. Das, J. Palmour, 2007 .

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

M. Shur, S. Dhar, A. Agarwal, 2012 .

Si-like low-frequency noise characteristics of 4H-SiC MOSFETs

M. Shur, S. Dhar, A. Agarwal, 2011 .

The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions

P. Ivanov, A. Potapov, M. F. Kudoyarov, 2018 .

Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation

P. Ivanov, A. Potapov, M. F. Kudoyarov, 2019, Semiconductors (Woodbury, N.Y.).

Effective carrier density in porous silicon carbide

S. Saddow, P. Ivanov, M. Mynbaeva, 2004 .

Dynamic characteristics of 4H-SiC drift step recovery diodes

I. Grekhov, P. Ivanov, A. Potapov, 2015 .

Experimental 4H-SiC junction-barrier Schottky (JBS) diodes

I. V. Grekhov, A. S. Potapov, I. Grekhov, 2009 .

Parameters of electron–hole scattering in silicon carbide

A. G. Tandoev, J. Palmour, M. Levinshtein, 2003 .

Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2000 .

Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses

A. Agarwal, M. Das, J. Palmour, 2011 .

Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime

A. Agarwal, M. Das, J. Palmour, 2011 .

Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process

V. A. Krivutsa, B. Hull, M. Das, 2007 .

Carrier lifetime measurements in 10 kV 4H-SiC diodes

Pavel Ivanov, Michael E. Levinshtein, John W. Palmour, 2003 .

Carrier lifetime "paradoxes" in high-voltage 4H-SiC diodes

J. Palmour, M. Levinshtein, R. Singh, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes

A. V. Afanas’ev, P. Ivanov, A. Potapov, 2013 .

Electric-field dependence of electron drift velocity in 4H–SiC

I. Grekhov, P. Ivanov, A. Potapov, 2016 .

I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

I. Grekhov, P. Ivanov, A. Potapov, 2011 .

Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs

Pavel Ivanov, Anant K. Agarwal, Sei-Hyung Ryu, 2002 .

Optical Switch-On of Silicon Carbide Thyristor

A. Agarwal, J. Palmour, M. Levinshtein, 2002 .

Transient injection and fast switch on in p‐i‐n diodes

A. G. Tandoev, J. Palmour, M. Levinshtein, 2006 .

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode

I. Grekhov, P. Ivanov, 2013 .

On the possibility of creating a superfast-recovery silicon carbide diode

I. Grekhov, A. Konstantinov, P. Ivanov, 2002 .

4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

P. Ivanov, A. Potapov, O. Kon’kov, 2018 .

Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask

S. Troshkov, P. Ivanov, N. Il'inskaya, 2020 .

Noise and Interface Density of Traps in 4 H‐SiC MOSFETs

M. Shur, A. Agarwal, S. Ryu, 2009 .