A. Pérez‐Tomás

发表

Physical modelling of large area 4H-SiC PiN diodes

P. Godignon, E. Santi, J. Hudgins, 2009, 2009 IEEE Energy Conversion Congress and Exposition.

A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface

P. Godignon, N. Mestres, J. Millán, 2006 .

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

A. Pérez‐Tomás, A. Fontserè, 2011 .

Metal Oxides in Photovoltaics: All-Oxide, Ferroic, and Perovskite Solar Cells

D. Tanenbaum, M. Lira-Cantú, A. Pérez‐Tomás, 2018 .

Stability of Molecular Devices: Halide Perovskite Solar Cells

M. Lira-Cantú, A. Pérez‐Tomás, Yegraf Reyna, 2018 .

Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

M. Placidi, Y. Cordier, S. Chenot, 2013 .

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

T. Tchelidze, G. Sauthier, A. Pérez‐Tomás, 2019, Materials Today Physics.

On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts

C. Fisher, P. Mawby, Y. Sharma, 2014 .

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

Lijie Li, P. Vales‐Castro, G. Sauthier, 2020, Crystal Growth & Design.

PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces

P. Godignon, N. Mestres, A. Pérez‐Tomás, 2006 .

Ta2Si Thermal Oxidation: A Simple Route to a High-k Gate Dielectric on 4H-SiC

P. Godignon, N. Mestres, J. Millán, 2004 .

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs

P. Mawby, M. Myronov, D. Hamilton, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs

Philippe Godignon, Peter Moens, Amador Pérez-Tomás, 2012, Microelectron. Reliab..

Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating

C. Fisher, P. Mawby, D. Hamilton, 2017, IEEE Journal of the Electron Devices Society.

Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

M. Placidi, Y. Cordier, S. Chenot, 2012 .

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

C. Fisher, P. Mawby, Y. Sharma, 2016, IEEE Electron Device Letters.

PbZrTiO3 ferroelectric oxide as an electron extraction material for stable halide perovskite solar cells

Anders Hagfeldt, Amador Pérez-Tomás, Shaik Mohammed Zakeeruddin, 2019, Sustainable Energy & Fuels.

Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

M. Placidi, Y. Cordier, S. Chenot, 2012 .

Bow Free 4″ Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates

C. Fisher, P. Mawby, A. Sánchez, 2012 .

Above‐Bandgap Photovoltages in Antiferroelectrics

M. Lira-Cantú, A. Pérez‐Tomás, G. Catalán, 2016, Advanced materials.

Origin of large negative electrocaloric effect in antiferroelectric PbZrO3

X. Jordà, M. Vellvehí, E. Defay, 2020, 2009.02184.

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

T. Tchelidze, M. Modreanu, P. Vales‐Castro, 2019, Journal of Materials Chemistry C.

A Solar Transistor and Photoferroelectric Memory

I. Shirley, M. Lira-Cantú, A. Pérez‐Tomás, 2018 .

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

F. Medjdoub, T. Tchelidze, A. Pérez‐Tomás, 2020, Materials Today Physics.

Deposited Thin SiO2 for Gate Oxide on n-Type and p-Type GaN

P. Godignon, M. Placidi, N. Mestres, 2010 .

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

Marc Porti, Montserrat Nafría, J. Llobet, 2012 .

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

M. Placidi, Y. Cordier, S. Chenot, 2011 .

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

M. Lanza, M. Porti, M. Nafría, 2012, Nanotechnology.

Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

P. Godignon, J. Bergman, X. Jordà, 2009 .

Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes

J. Millan, D. Tournier, A. Perez-Tomas, 2005, IEEE Transactions on Electron Devices.

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

A. Pérez‐Tomás, Amador Pérez‐Tomás, 2019, Advanced Materials Interfaces.

P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Cuong Ton-That, Amador Pérez-Tomás, Bruno Berini, 2017 .

Direct Visualization of Anti‐Ferroelectric Switching Dynamics via Electrocaloric Imaging

X. Jordà, M. Vellvehí, E. Defay, 2021, Advanced Electronic Materials.

A Survey of Wide Bandgap Power Semiconductor Devices

Philippe Godignon, Jose Rebollo, Xavier Perpina, 2014, IEEE Transactions on Power Electronics.

Interfacial properties of thermally oxidized Ta2Si on Si

P. Godignon, P. Mawby, J. Millán, 2008 .

A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for MIS structures on 4H-SiC

P. Godignon, N. Mestres, J. Millán, 2005, CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005..

Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

N. Mestres, J. Millán, D. Tournier, 2004 .

4H-SiC MIS structures using oxidized Ta 2 Si as high-k dielectric

P. Godignon, N. Mestres, J. Millán, 2004 .

Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes

M. Lira-Cantú, P. Vales‐Castro, M. Jennings, 2019, Materials Today Energy.

GaN transistor characteristics at elevated temperatures

J. Millan, Amador Pérez-Tomás, Phillippe Godignon, 2009 .

Carbon Incorporation in MOCVD of MoS2 Thin Films Grown from an Organosulfide Precursor

Justin R. Sperling, J. Garrido, C. Hébert, 2021, Chemistry of Materials.

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

David J. Rogers, Philippe Bove, Michael R. Jennings, 2018, OPTO.

Performance and stability of mixed FAPbI3(0.85)MAPbBr3(0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation

Amador Pérez-Tomás, Monica Lira-Cantu, Shahzad Ahmad, 2016 .

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

M. Porti, M. Nafría, M. Placidi, 2015, Nanotechnology.

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Amador Perez-Tomas, C. Fisher, P. Mawby, 2020, IEEE Transactions on Electron Devices.

M. Jennings, A. Pérez‐Tomás, E. Chikoidze, 2022, Materials.

3C-SiC films on insulated substrates for high-temperature electrostatic-based resonators

M. Placidi, N. Mestres, G. Abadal, 2010 .

SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment

P. Godignon, M. Placidi, N. Mestres, 2010 .

Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

P. Chapon, Wan‐Yu Wu, R. Horng, 2021 .

Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS2: vibrational properties of atomically thin MoS2 layers

M. Placidi, N. Mestres, A. Pérez‐Rodríguez, 2015, 1506.03228.

Interfacial properties of AlN and oxidized AlN on Si

P. Godignon, M. Placidi, N. Mestres, 2010 .

Si/SiC bonded wafer: a route to carbon free SiO2 on SiC

M. Placidi, J. Covington, P. Mawby, 2009 .

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

J. Covington, P. Mawby, R. Hammond, 2009 .

Si ∕ SiC Heterojunctions Fabricated by Direct Wafer Bonding

J. Covington, P. Mawby, R. Hammond, 2008 .

Characterization and modeling of n-n Si∕SiC heterojunction diodes

J. Covington, P. Mawby, V. Shah, 2007 .

High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC

James A. Covington, Amador Pérez-Tomás, M. R. Jennings, 2007, Microelectron. J..

Molecular beam epitaxy Si/4H-SiC heterojunction diodes

J. Covington, P. Mawby, V. Shah, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

Marc Porti, Montserrat Nafría, J. Llobet, 2011 .

Inhibiting the absorber/Mo-back contact decomposition reaction in Cu2ZnSnSe4 solar cells: the role of a ZnO intermediate nanolayer

M. Placidi, A. Pérez‐Rodríguez, V. Izquierdo‐Roca, 2013 .

Modelling the inhomogeneous SiC Schottky interface

Philip A. Mawby, Evgeniy Donchev, Jing S. Pang, 2013 .

A study of temperature-related non-linearity at the metal-silicon interface

Philip A. Mawby, Evgeniy Donchev, Jing S. Pang, 2012 .

Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

James A. Covington, Philip A. Mawby, Amador Pérez-Tomás, 2010 .

Analysis of inhomogeneous Ge/SiC heterojunction diodes

James A. Covington, Philip A. Mawby, Amador Pérez-Tomás, 2009 .

SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator

P. Godignon, N. Mestres, P. Mawby, 2008 .

Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

Amador Pérez-Tomás, Michael R. Jennings, Peter M. Gammon, 2013 .

Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

Y. K. Sharma, M. R. Jennings, P. A. Mawby, 2014, IEEE Journal of the Electron Devices Society.

A study of the influence of the annealing processes and interfaces with deposited SiO2 from tetra-ethoxy-silane for reducing the thermal budget in the gate definition of 4H–SiC devices

P. Godignon, N. Mestres, J. Millán, 2006 .

Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN

Amador Pérez-Tomás, Phillippe Godignon, Marcel Placidi, 2009 .

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

J. Millan, Amador Pérez-Tomás, Xavier Jordà, 2009 .

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

P. Godignon, N. Mestres, J. Covington, 2007 .

Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

J. Millan, James A. Covington, Philip A. Mawby, 2006 .

Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion

N. Mestres, M. Vellvehí, J. Millán, 2006 .

Characterization of High-k Ta2Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator

P. Godignon, N. Mestres, J. Millán, 2005 .

Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

M. Placidi, P. Gammon, M. Jennings, 2013 .

Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN

Amador Pérez-Tomás, M. R. Jennings, Abel Fontserè, 2011, Microelectron. Reliab..

Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity

G. Guillot, C. Schaefer, L. Chernyak, 2023, 2306.01115.

Electrical properties of p-type Zn:Ga2O3 thin films

G. Guillot, T. Tchelidze, A. Pérez‐Tomás, 2022, Journal of Vacuum Science & Technology A.

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

C. Fisher, P. Mawby, Y. Sharma, 2015 .

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

P. Mawby, G. Greco, F. Roccaforte, 2021, Materials.

Wide Band Gap Semiconductor Devices for Power Electronics

J. Millán, P. Godignon, A. Pérez‐Tomás, 2012 .

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

C. Fisher, P. Mawby, Y. Sharma, 2015, Journal of Electronic Materials.

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation

P. Mawby, Y. Sharma, S. M. Thomas, 2015 .

Effects of Photons on 4H-SiC Rapid Thermal Oxidation Using Nitrous Oxide Gas

M. Placidi, A. Constant, N. Camara, 2010 .

A study of the influence of N/sub 2/O and N/sub 2/ annealing processes on 4H-SiC MOS structures with deposited TEOS SiO/sub 2/ as gate oxide

P. Godignon, N. Mestres, J. Millán, 2005, Conference on Electron Devices, 2005 Spanish.

Ohmic Contacts to implanted GaN

P. Godignon, M. Placidi, N. Mestres, 2009, 2009 Spanish Conference on Electron Devices.

Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

T. Chow, P. Losee, J. Covington, 2007 .

Schottky versus bipolar 3.3 kV SiC diodes

J. Millan, Amador Pérez-Tomás, Xavier Jordà, 2008 .

A walk on the frontier of energy electronics with power ultra-wide bandgap oxides and ultra-thin neuromorphic 2D materials

A. Pérez-Tomás, E. Chikoizde, D. Rogers, 2021, OPTO.

The Cryogenic Testing and Characterisation of SiC Diodes

C. Fisher, P. Mawby, M. Myronov, 2014 .

Physical Modelling of 4H-SiC PiN Diodes

C. Fisher, P. Godignon, P. Mawby, 2012 .

Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications

C. W. Chan, P. Mawby, M. Myronov, 2015 .

Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

P. Godignon, M. Placidi, N. Mestres, 2010 .

A study on free-standing 3C-SiC bipolar power diodes

P. Mawby, P. Gammon, A. Pérez‐Tomás, 2021 .

Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

C. Fisher, P. Mawby, Y. Sharma, 2014, IEEE Transactions on Semiconductor Manufacturing.

Innovative 3C-SiC on SiC via Direct Wafer Bonding

C. Fisher, P. Mawby, S. M. Thomas, 2013 .

Characterization of MOS interfaces on protected and un-protected 4H-SiC surfaces

P. Igić, S. Wilks, A. Pérez‐Tomás, 2008, 2008 26th International Conference on Microelectronics.

Physical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPS

P. Mawby, Y. Sharma, M. Walker, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si

P. Mawby, Y. Sharma, V. Shah, 2016 .

Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications

C. Fisher, P. Mawby, Y. Sharma, 2014 .

Electrical performance at high temperature and surge current of 1.2 kV power rectifiers: Comparison between Si PiN, 4H-SiC Schottky and JBS diodes

P. Godignon, X. Jordà, J. Millán, 2008, 2008 International Semiconductor Conference.

Characterisation of HfO2/Si/SiC MOS Capacitors

P. Godignon, M. Placidi, N. Mestres, 2011 .

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

M. Porti, M. Nafría, M. Placidi, 2015, Nanotechnology.

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

J. Llobet, Amador Pérez-Tomás, Sébastien Chenot, 2013 .

On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes

C. Fisher, P. Mawby, Y. Sharma, 2014, 2014 16th European Conference on Power Electronics and Applications.

Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation

C. Fisher, P. Mawby, Y. Sharma, 2014 .