K. Irvine

发表

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers

J. Richmond, J. Palmour, Ranbir Singh, 2002 .

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

J. Sumakeris, M. Paisley, O. Kordina, 1997 .

GaN Three Dimensional Nanostructures

K. Irvine, V. Nikolaev, V. Dmitriev, 1995 .

5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

J. Palmour, M. Paisley, C. Carter, 1998 .

Low resistivity (∼10−5 Ω cm2) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer

M. Spencer, K. Irvine, V. Dmitriev, 1994 .

High hole lifetime (3.8 /spl mu/s) in 4H-SiC diodes with 5.5 kV blocking voltage

J. Palmour, M. Levinshtein, O. Kordina, 1999 .

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

M. Das, J. Palmour, M. Levinshtein, 2005 .

Observation of Linear Electro-Optic Effect in Cubic Silicon Carbide

M. Spencer, K. Irvine, Xiao Tang, 1992 .

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

J. Palmour, K. Irvine, W. Schaffer, 1994 .

Growth of solid solutions of aluminum nitride and silicon carbide by metalorganic chemical vapor deposition

M. Spencer, K. Irvine, V. Dmitriev, 1993 .

Planar defects in 4H-SiC PiN diodes

T. Chow, J. Sumakeris, M. Twigg, 2005 .

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

Allen R. Hefner, John W. Palmour, David W. Berning, 2002 .

ELECTRIC BREAKDOWN IN GAN P-N JUNCTIONS

Vladimir Dmitriev, Calvin H. Carter, N. I. Kuznetsov, 1996 .

Electric Breakdown in Nitride PN Junctions

C. Carter, K. Irvine, N. Kuznetsov, 1995 .

Progress in SiC : from material growth to commercial device development

J. Palmour, C. Carter, S. Allen, 1999 .

Mechanisms of Stacking Fault Growth in SiC PiN Diodes

P. Losee, J. Sumakeris, M. Twigg, 2004 .

Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface

Michael R. Melloch, John W. Palmour, M. Melloch, 1995 .

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes

T. Chow, P. Losee, J. Sumakeris, 2004 .

Current-voltage characteristics of GaN and AlGaN p-i-n diodes

K. Irvine, N. Kuznetsov, 1998 .

Residual strains in GaN grown on 6H-SiC

K. Irvine, I. Nikitina, V. Dmitriev, 1997 .

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

A. Agarwal, B. Hull, J. Sumakeris, 2008 .

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

M. Das, J. Palmour, J. Sumakeris, 2005 .

Spontaneous and stimulated emission from photopumped GaN grown on SiC

Vladimir Dmitriev, John A. Edmond, V. I. Nikolaev, 1995 .

Carrier lifetime measurements in 10 kV 4H-SiC diodes

Pavel Ivanov, Michael E. Levinshtein, John W. Palmour, 2003 .

4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage

O. Kordina, J. Palmour, M. Levinshtein, 1998, 56th Annual Device Research Conference Digest (Cat. No.98TH8373).

Schottky barriers on n-GaN grown on SiC

C. Carter, K. Irvine, E. Kalinina, 1996 .

Growth and characterization of GaN layers on SiC substrates

A. Babanin, N. Bert, G. Bulman, 1996 .

Linear electro-optic effect in cubic silicon carbide

Michael G. Spencer, Xiao Tang, Dongping Zhang, 1991 .