S. Ji

发表

Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

H. Tsuchida, K. Kojima, Y. Ishida, 2015 .

Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

K. Kojima, H. Okumura, S. Ji, 2020 .

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

K. Kojima, H. Okumura, S. Ji, 2019, Materials Science Forum.

CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

K. Kojima, H. Okumura, S. Ji, 2018, Materials Science Forum.

Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

K. Kojima, H. Okumura, S. Ji, 2017 .

An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD

K. Kojima, H. Okumura, S. Ji, 2017 .

Influence of growth pressure on filling 4H-SiC trenches by CVD method

K. Kojima, Yasunori Tanaka, H. Okumura, 2015 .

Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

K. Kojima, Yasunori Tanaka, H. Okumura, 2015 .

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2021, Japanese Journal of Applied Physics.

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2020 .

Characteristics of nanocrystalline AlN:Er films co-deposited by using AlN, Er, and SiO2 targets

S. Ji, K. Mimura, M. Isshiki, 2007 .

Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO2

Yongfu Zhu, S. Ji, K. Mimura, 2007 .

Al-Based Electrodes for Large Size and High Resolution TFT AM-LCDs (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)

Yihua Li, Chuanzhen Liu, Yu Zhang, 2000 .

Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Color-tunable luminescence and energy transfer properties of Dy 3+ /Eu 3+ codoped Sr 3 Sc(PO 4 ) 3 eulytite-type orthophosphate phosphors for NUV-LEDs

S. Ji, Denghui Xu, Jia-yue Sun, 2017 .

Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration

K. Kojima, H. Okumura, Tomohisa Kato, 2018, Applied Physics Express.

Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

H. Okumura, S. Ji, Y. Yonezawa, 2019, Japanese Journal of Applied Physics.

Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

H. Tsuchida, K. Kojima, H. Okumura, 2015 .

Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

H. Tsuchida, K. Kojima, H. Okumura, 2015 .

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

H. Tsuchida, K. Kojima, Y. Ishida, 2014 .

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

H. Tsuchida, K. Kojima, H. Okumura, 2012 .

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

H. Tsuchida, K. Kojima, H. Okumura, 2014 .

Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth

M. Sometani, S. Harada, K. Kojima, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

2D Metal‐Organic Complex Luminescent Crystals

Y. Zhao, T. Zhai, Lang Jiang, 2021, Advanced Functional Materials.

A novel substrate LaBGeO5 lattice‐matched to InN

S. Miyazawa, T. Matsuoka, S. Ji, 2011 .

First topography simulation of SiC-chemical-vapor-deposition trench filling, demonstrating the essential impact of the Gibbs-Thomson effect

H. Okumura, S. Ji, Y. Yonezawa, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect

K. Kojima, H. Okumura, S. Ji, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

H. Okumura, S. Ji, Y. Yonezawa, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Growth conditions of β-FeSi2 single crystals by chemical vapor transport

S. Ji, M. Isshiki, J. F. Wang, 2006 .

Bubble wall confinement–driven molecular assembly toward sub–12 nm and beyond precision patterning

Pengcheng Zhou, Y. Zhao, Zhandong Huang, 2023, Science advances.

Effect of Nitridation on Indium-Composition of InGaN Films

T. Hanada, T. Matsuoka, S. Ji, 2012 .

Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2020, Japanese Journal of Applied Physics.

Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers

K. Kojima, H. Okumura, Tomohisa Kato, 2019, Japanese Journal of Applied Physics.

MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (111) substrate

Jae-Won Lim, Daisuke Shindo, D. Shindo, 2005 .

High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

S. Ji, M. Isshiki, G. Lalev, 2005 .

Numerical analysis of the Gibbs–Thomson effect on trench-filling epitaxial growth of 4H-SiC

K. Kojima, H. Okumura, S. Ji, 2016 .

Erratum: Strain relaxation mechanism of InGaN thin film grown on m‐GaN [Phys. Status Solidi C 8, 444–446 (2011)]

T. Hanada, T. Matsuoka, S. Ji, 2012 .

Strain relaxation mechanism of InGaN thin film grown on m -GaN

T. Hanada, T. Matsuoka, S. Ji, 2011 .

Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC

K. Kojima, H. Okumura, T. Mitani, 2013 .

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

K. Kojima, H. Okumura, Tomohisa Kato, 2019, Materials Science Forum.

Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2018, Materials Science Forum.

Chiral 2D/Quasi‐2D Perovskite Heterojunction Nanowire Arrays for High‐Performance Full‐Stokes Polarization Detection

Y. Zhao, S. Ji, Haidi Liu, 2023, Advanced Optical Materials.

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

H. Tsuchida, K. Kojima, Y. Ishida, 2015 .

Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

Y. Ishida, S. Ji, Atsuki Hidaka, 2023, Journal of Applied Physics.