S. Wang

Power MOSFETs, IGBTs, and thyristors in SiC: Optimization, experimental results, and theoretical performance

J. Cooper, Y. Sui, T. Tamaki, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes protected by Junction Termination Extension

D. Planson, J. Chante, M. Lazar, 2004 .