N. Mahadik

发表

Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption

S. Buchner, P. Klein, R. Stahlbush, 2017 .

Microwave annealing of Mg-implanted and in situ Be-doped GaN

M. V. Rao, J. A. Freitas, S. Qadri, 2010 .

Expansion of Shockley Stacking faults in high doped 4H-SiC epilayers

K. Hobart, R. Myers-Ward, C. Eddy, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Depth-resolved X-ray determination of surface strain in free-standing films of HVPE-grown GaN and 71Ga NMR characterization

M. V. Rao, S. Qadri, N. Mahadik, 2006 .

Structural Inhomogeneities and Impurity Incorporation in Growth of High-Quality Ammonothermal GaN Substrates

J. A. Freitas, S. Qadri, N. Mahadik, 2015 .

In situ strain measurements on GaN/AlGaN Schottky diodes with variable bias

M. V. Rao, S. Qadri, N. Mahadik, 2008 .

Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor

M. V. Rao, S. Qadri, N. Mahadik, 2008 .

High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography

K. Hobart, T. Anderson, R. Stahlbush, 2019, APL Materials.

Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres

J. Freitas, K. Schmieder, N. Mahadik, 2020, Journal of Physics D: Applied Physics.

Demonstration of CuI as a P–N heterojunction to β-Ga2O3

K. Hobart, A. Koehler, T. Anderson, 2019, Applied Physics Express.

Physical properties of nanometer graphene oxide films partially and fully reduced by annealing in ultra-high vacuum

J. Robinson, J. Boercker, G. Jernigan, 2017 .

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

J. Freitas, P. Klein, J. Greenlee, 2015 .

Cu2-xS/PbS Core/Shell Nanocrystals with Improved Chemical Stability

R. Stroud, Sarah Brittman, J. Boercker, 2021, Chemistry of Materials.

Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures

A. Agarwal, M. Dudley, R. Stahlbush, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

K. Hobart, A. Koehler, V. Wheeler, 2016 .

Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

M. Boćkowski, J. A. Freitas, N. Mahadik, 2015 .

Nanoscale Spectroscopy of Dielectric Properties of Mica

K. Bolotin, S. Gamage, Y. Abate, 2020, ACS Photonics.

Double-crystal X-ray topography of freestanding HVPE grown n-type GaN

M. V. Rao, S. Qadri, N. Mahadik, 2007 .

Homoepitaxial HVPE GaN: A potential substrate for high performance devices

M. Boćkowski, M. Dudley, S. Wu, 2018, Journal of Crystal Growth.

Incorporation of pervasive impurities on HVPE GaN growth directions

M. Boćkowski, J. A. Freitas, N. Mahadik, 2016 .

HVPE GaN wafers with improved crystalline and electrical properties

M. Boćkowski, J. A. Freitas, N. Mahadik, 2016 .

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

A. Agarwal, M. Al‐Jassim, N. Mahadik, 2022, 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Defects in 4H-SiC epilayers affecting device yield and reliability

A. Agarwal, B. Odekirk, N. Mahadik, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Evolution of lattice distortions in 4H-SiC wafers with varying doping

R. Stahlbush, S. Stoupin, V. Rengarajan, 2020, Scientific Reports.

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

B. Hull, A. Burk, R. Stahlbush, 2015 .

Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

M. O'loughlin, R. Stahlbush, N. Mahadik, 2014 .

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

R. Nipoti, R. Stahlbush, N. Mahadik, 2014 .

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

A. Agarwal, R. Stahlbush, Q. C. Zhang, 2012 .

Formation mechanism of horizontal-half-loop arrays and stacking fault expansion behavior in thick SiC epitaxial layers

R. Stahlbush, N. Mahadik, Woongje Sung, 2022, Journal of Applied Physics.

Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing

R. Stahlbush, C. Affouda, N. Mahadik, 2016 .

Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

K. Hobart, R. Myers-Ward, C. Eddy, 2011 .

Mitigating Defects within Silicon Carbide Epitaxy

R. Stahlbush, N. Mahadik, J. Caldwell, 2011 .

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

T. Taubner, R. Stahlbush, N. Bassim, 2020, Advanced Functional Materials.

Dislocation analysis of epitaxial InAsSb on a metamorphic graded layer using x-ray topography

S. Svensson, N. Mahadik, 2022, Journal of Applied Physics.

Trapezoid defect in 4H–SiC epilayers

G. Chung, M. Skowronski, R. Stahlbush, 2012 .

Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers

K. Hobart, R. Stahlbush, N. Mahadik, 2012 .

Phase transition in Sr0.75Ba0.25NbO3 near the Curie temperature

J. Bellotti, A. Garzarella, S. Qadri, 2006 .

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3

David J. Smith, F. Ren, S. Pearton, 2019, ECS Journal of Solid State Science and Technology.

Structural characteristics of a single-crystalline Sr0.75Ba0.25NbO3 electro-optic material

A. Garzarella, S. Qadri, Dong Wu, 2009 .

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

Jaime A. Freitas, Jordan D. Greenlee, Fritz J. Kub, 2016, Journal of Electronic Materials.

Long range, non-destructive characterization of GaN substrates for power devices

Andrew D. Koehler, Fritz J. Kub, Jennifer K. Hite, 2019, Journal of Crystal Growth.

Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy

M. Mehl, C. Eddy, S. Qadri, 2013 .

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

C. Eddy, S. Qadri, N. Mahadik, 2013 .

Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Anisotropic thermal expansion of RuCo alloys in carbon nanotube matrix

S. Qadri, N. Mahadik, M. Laskoski, 2009 .

Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN

M. V. Rao, A. Davydov, N. Mahadik, 2006, 2005 International Semiconductor Device Research Symposium.

Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

S. Buchner, P. Klein, R. Stahlbush, 2018, Materials Science Forum.

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

Jaime A. Freitas, Hongping Zhao, Marko J. Tadjer, 2016 .

Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

M. Skowronski, V. Wheeler, R. Myers-Ward, 2013 .

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers

M. Skowronski, V. Wheeler, R. Myers-Ward, 2011 .

X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates

S. Qadri, J. Sanghera, J. Pellegrino, 2010 .

Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates

M. Groenert, S. Qadri, J. Pellegrino, 2008 .

Thermal expansion studies of indium–iron oxide

A. Piqué, N. Mahadik, H. Kim, 2011 .

Transport, magnetic and structural properties of bulk In2-xFexO3

M. V. Rao, A. Piqué, S. Qadri, 2010 .

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

B. Hull, K. Hobart, R. Stahlbush, 2010 .

Binary Superlattices of Infrared Plasmonic and Excitonic Nanocrystals.

Sarah Brittman, J. Boercker, J. Tischler, 2020, ACS applied materials & interfaces.

Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation

R. Stahlbush, N. Mahadik, 2015, Journal of Electronic Materials.

SiGeSn buffer layer for the growth of GeSn films

M. Twigg, G. Jernigan, N. Mahadik, 2023, Journal of Applied Physics.

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

O. Aktas, K. Hobart, A. Koehler, 2017 .

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers

K. Hobart, V. Wheeler, R. Myers-Ward, 2014 .

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

M. Ancona, K. Hobart, R. Myers-Ward, 2012 .

Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers

M. Dudley, R. Stahlbush, B. Raghothamachar, 2023, Scripta Materialia.

Ultra-low resistivity Al+ implanted 4H–SiC obtained by microwave annealing and a protective graphite cap

M. V. Rao, Qingchun Zhang, S. Qadri, 2008 .

Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

M. O'loughlin, A. Burk, R. Stahlbush, 2012 .

Solid-state microwave annealing of ion-implanted 4H–SiC

M. V. Rao, S. Qadri, S. Sundaresan, 2007 .

Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers

M. V. Rao, Qingchun Zhang, S. Qadri, 2009 .

Defects affecting SiC power device reliability

R. E. Stahbush, N. A. Mahadik, N. Mahadik, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

B. Gorman, H. Guthrey, A. Norman, 2023, Journal of Applied Physics.

Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties

K. Hobart, A. Koehler, T. Anderson, 2017 .

Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers

M. Twigg, C. Affouda, N. Mahadik, 2016, Journal of Electronic Materials.

Thermal instability and the growth of the InGaAs∕AlGaAs pseudomorphic high electron mobility transistor system

M. V. Rao, J. Guyer, S. Qadri, 2007 .

Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide.

Joshua D. Caldwell, T. Taubner, N. Mahadik, 2024, Nano letters.

Thermal expansion of RuFe alloys and its relationship to the high pressure phase of Fe

S. Qadri, E. Skelton, N. Mahadik, 2009 .