C. Nuese

发表

Improved COMFETs with fast switching speed and high-current capability

A. Goodman, J. P. Russell, L. Goodman, 1983, 1983 International Electron Devices Meeting.

Reduced degradation in InxGa1−xAs electroluminescent diodes

C. Nuese, M. Ettenberg, 1975 .

Direct Evidence for Generation of Defect Centers during Forward‐Bias Degradation of GaAs1−xPxElectroluminescent Diodes

H. Schade, J. Gannon, C. Nuese, 1971 .

Efficiency degradation of GaAs1−xPx electroluminescent diodes due to high-energy electron irradiation

H. Schade, C. Nuese, D. Herrick, 1970 .

Lifetime‐controlling recombination centers in platinum‐diffused silicon

H. Schade, C. Nuese, M. D. Miller, 1976 .

Luminescence from In0.5Ga0.5P prepared by vapor‐phase epitaxy

C. Nuese, H. Kressel, I. Ladany, 1973 .

PREPARATION OF VISIBLE‐LIGHT‐EMITTING p‐n JUNCTIONS IN AlAs

J. Gannon, C. Nuese, S. L. Gilbert, 1970 .

Vapor‐grown cw room‐temperature GaAs/InyGa1−yP lasers

G. Olsen, C. Nuese, M. Ettenberg, 1976 .

Light-Emitting Diodes and Semiconductor Materials for Displays

C. Nuese, H. Kressel, I. Ladany, 1973 .

Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers

G. Olsen, C. Nuese, M. Ettenberg, 1979 .

Reliability of vapor-grown InGaAs and InGaAsP heterojunction laser structures

G. Olsen, C. Nuese, M. Ettenberg, 1979 .

Optimization of Electroluminescent Efficiencies for Vapor‐Grown GaAs1 − x P x Diodes

J. Gannon, C. Nuese, J. Tietjen, 1969 .

MuItiiunction AC or DC Integrated GaP Light Emitting Diode Array

R. Dingle, R. Logan, J. Pankove, 1975 .

A Chemical Etchant for the Selective Removal of GaAs Through SiO2 Masks

J. Gannon, C. Nuese, 1974 .

Electroluminescent shockley diodes of GaAs and GaAsl−x, Px

J. Gannon, C. Wronski, C. Nuese, 1973 .

The preparation and properties of vapor-grown In1−xGax P

R. Clough, C. Nuese, D. Richman, 1971 .

Gallium arsenide-phosphide: Crystal, diffusion and laser properties

G. Stillman, N. Holonyak, C. Nuese, 1966 .

Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAs

J. Gannon, C. Nuese, M. Ettenberg, 1975 .

Room‐temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μm

G. Olsen, C. Nuese, 1975 .

cw laser diodes and high‐power arrays of InxGa1−xAs for 1.06‐μm emission

C. Nuese, H. Kressel, M. Ettenberg, 1974 .

The temperature dependence of threshold current for double‐heterojunction lasers

Henry Kressel, M. Ettenberg, C. J. Nuese, 1979 .

III-V alloys for optoelectronic applications

C. Nuese, 1977 .

Growth and Dislocation Structure of Single‐Crystal Ga (As1−xPx)

C. M. Wolfe, N. Holonyak, C. Nuese, 1965 .

Effect of the Direct‐Indirect Transition on the Hall Effect in Ga(As1−xPx)

D. E. Hill, C. M. Wolfe, G. Stillman, 1966 .

The future for LEDs

I. Ladany, H. Kressel, C. J. Nuese, 1972, IEEE Spectrum.

Silver‐Manganese Evaporated Ohmic Contacts to p‐type Gallium Arsenide

J. Gannon, C. Nuese, 1968 .

GaAs vapor-grown Shockley diodes and semiconductor-controlled rectifiers

C. Wronski, C. Nuese, H. Gossenberger, 1972 .

GaAs vapor-grown bipolar transistors

R. H. Dean, R. E. Enstrom, C. J. Nuese, 1972 .

Red-emitting Ga/As,P///In,Ga/P heterojunction lasers

G. Olsen, C. Nuese, H. Kressel, 1978 .

Visible GaAs0.7P0.3 cw heterojunction lasers

Henry Kressel, Gregory H. Olsen, C. J. Nuese, 1977 .

Interfacial recombination velocity determination in In 0.5Ga0.05P/GaAs

G. Olsen, C. Nuese, M. Ettenberg, 1977 .

A refined step-recovery technique for measuring minority carrier lifetimes and related parameters in asymmetric p-n junction diodes

R. H. Dean, C. J. Nuese, C. Nuese, 1971 .

Defect Centers in GaAs1−xPx Electroluminescent Diodes Due to High‐Energy Electron Irradiation

H. Schade, C. Nuese, D. Herrick, 1970 .

Room‐temperature heterojunction laser diodes from vapor‐grown In1−xGaxP/GaAs structures

Gregory H. Olsen, C. J. Nuese, G. Olsen, 1974 .

Vapor Growth of In1 − x Ga x P for P‐N Junction Electroluminescence II . Luminescence Characteristics

M. S. Abrahams, J. Gannon, C. Nuese, 1973 .

The effect of elastic strain on energy band gap and lattice parameter in III‐V compounds

Gregory H. Olsen, C. J. Nuese, R. T. Smith, 1978 .

cw room‐temperature InxGa1−xAs/InyGa1−yP 1.06‐μm lasers

G. Olsen, J. Gannon, C. Nuese, 1976 .

Light-emitting diodes — LEDs

Jacques I. Pankove, C. J. Nuese, J. Pankove, 1980 .

Comparison of Zn‐doped GaAs layers prepared by liquid‐phase and vapor‐phase techniques, including diffusion lengths and photoluminescence

C. Nuese, M. Ettenberg, 1975 .

Highly Refractive Glasses to lmprove Electroluminescent Diode Efficiencies

A. G. Fischer, C. Nuese, 1969 .

Efficient 1.06-µm emission from In x Ga 1-x As electroluminescent diodes

C. Nuese, R. Enstrom, 1972 .

Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor‐Grown p‐n Junctions

J. Gannon, C. Nuese, A. Sigai, 1972 .

Location of the Source of Recombination Radiation in Ga (As1−xPx) p‐n Junctions by Electron Bombardment

O. T. Purl, C. M. Wolfe, N. Holonyak, 1965 .

Influence of Gas‐Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor‐Grown GaAs P‐N Junctions

J. Gannon, C. Nuese, R. Enstrom, 1974 .

Vapor Growth of In1 − x Ga x P for P‐N Junction Electroluminescence I . Material Preparation

C. Nuese, T. Zamerowski, R. Enstrom, 1973 .

Electrolytic Removal of P‐Type GaAs Substrates from Thin, N‐Type Semiconductor Layers

J. Gannon, C. Nuese, 1970 .

A comparison of effective doping densities of composite structures by hall and magnetoresistance measurements

L. C. Upadhyayula, C. Nuese, R. Enstrom, 1976, IEEE Transactions on Electron Devices.

Room‐temperature laser operation of InxGa1−xAs p‐n junctions

C. Nuese, M. Ettenberg, R. Enstrom, 1974 .

Effect of gas-phase stoichiometry on the minority-carrier diffusion length in vapor-grown GaAs

G. Olsen, C. Nuese, M. Ettenberg, 1976 .