N. Wright

发表

Effects of Process Variations on Silicon Carbide Devices for Extreme Environments

H. Habib, N. Wright, A. Horsfall, 2011 .

Optimisation of 4H-SiC MOSFET Structures for Logic Applications

K. Vassilevski, N. Wright, A. Horsfall, 2006 .

High temperature vibration energy harvester system

K. Vassilevski, N. Wright, A. Horsfall, 2010, 2010 IEEE Sensors.

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

M. I. Idris, H. K. Chan, M. Weng, 2016 .

Recent progress and current issues in SiC semiconductor devices for power applications

A. O'Neill, K. Hilton, M. Uren, 2001 .

Prospects for SiC electronics and sensors

Konstantin Vassilevski, N. G. Wright, K. Vassilevski, 2008 .

Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

A. O'Neill, K. Hilton, M. Uren, 2000 .

Mechanical properties of a 3C-SiC film between room temperature and 600 °C

Liudi Jiang, Rebecca Cheung, Mehran Mehregany, 2007 .

Complementary JFET Logic for Low-Power Applications in Extreme Environments

H. Habib, N. Wright, A. Horsfall, 2013 .

Hinge sensitivity in a micro-rotating structure for predicting induced thermo mechanical stress in integrated circuit metal interconnects

A. O'Neill, J. Stevenson, A. Walton, 2003 .

CMOS compatible gas sensor arrays for hostile environments

K. V. Vassilevski, N. G. Wright, S. Roy, 2012, 2012 IEEE Sensors.

A new SiC/SOI-based PWM generator for SiC-based power converters in high temperature environments

N. Wright, A. Horsfall, O. Mostaghimi, 2012, 2012 IEEE Power and Energy Conference at Illinois.

Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures

N. Wright, A. Horsfall, A. Murphy, 2012 .

Field enhanced diffusion of nitrogen and boron in 4H–silicon carbide

E. G. Chester, G. J. Phelps, C. M. Johnson, 2003 .

Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals

M. Rayson, P. Briddon, J. Goss, 2012 .

Characterization of thermally oxidized Ti∕SiO2 gate dielectric stacks on 4H–SiC substrate

C. P. Burrows, K. S. Coleman, S. Chattopadhyay, 2006 .

Residual Stress Sensor for the Microelectronics Industry

A. O'Neill, J. Stevenson, A. Walton, 2003 .

Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects

A. O'Neill, M. Hunt, J. Goss, 2014 .

Unexpected change in the electron affinity of diamond caused by the ultra-thin transition metal oxide films

R. Jones, M. Rayson, P. Briddon, 2014 .

Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces

P. Briddon, J. Goss, A. Tiwari, 2012 .

Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements

K. Isoird, M. Lazar, C. Raynaud, 2002 .

Surface passivation techniques for GaAs power Schottky diodes

A. O'Neill, C.M. Johnson, N. Wright, 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

Discriminating High k Dielectric Gas Sensors

K. Vassilevski, Sandipta Roy, N. Wright, 2014 .

Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics

Sandipta Roy, N. Wright, A. Horsfall, 2013 .

SiC gas sensor arrays for extreme environments

S. Roy, K. Vassilevski, N. Wright, 2013, 2013 IEEE SENSORS.

Trap Assisted Gas Sensing Mechanism in MISiC Capacitors

M. Weng, R. Mahapatra, N. Wright, 2007 .

Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide

A. O'Neill, J. Goss, K. Vassilevski, 2012 .

Positron spectroscopy of high-k dielectric films on SiC

C. P. Burrows, N. Wright, R. Mahapatra, 2007 .

Discriminating gas concentrations in extreme temperature environments

N. Wright, A. Horsfall, B. Furnival, 2011, 2011 IEEE SENSORS Proceedings.

Calculated electron affinity and stability of halogen-terminated diamond

M. Rayson, P. Briddon, J. Goss, 2011 .

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms

A. O'Neill, T. Hopf, J. Goss, 2014 .

Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC

A. O'Neill, T. Hopf, M. Hunt, 2014 .

Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface

P. Briddon, J. Goss, N. Wright, 2010 .

Photoluminescence Of Sisnc Alloys Grown On (100) Si Substrates

Paul R. Berger, F. Guarín, S. Iyer, 1998 .

High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces

V. Wheeler, R. Myers-Ward, C. Eddy, 2013 .

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

A. O'Neill, C. M. Johnson, K. Vassilevski, 2005 .

Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers

G. J. Phelps, K. Vassilevski, N. Wright, 2007 .

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

K. Hilton, M. Uren, P. Bhatnagar, 2007 .

Temperature Stability of Heteropolytypic 6H/3C FETs

K. Vassilevski, N. Wright, A. Horsfall, 2007 .

Optimisation of a 4H-SiC Enhancement Mode Power JFET

A. O'Neill, C. M. Johnson, N. Wright, 2003 .

TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors

A. O'Neill, C. M. Johnson, N. Wright, 2000 .

Effective Edge Termination Design in SiC VJFET

A. O'Neill, C. M. Johnson, K. Vassilevski, 2005 .

Mechanistic model for oxidation of SiC

A. O'Neill, C. M. Johnson, N. Wright, 1999 .

Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes

C. K. Maiti, A. O'Neill, S. Chattopadhyay, 2006 .

The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors

R. Mahapatra, N. Wright, A. Horsfall, 2008 .

Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack

K. S. Coleman, R. Mahapatra, N. Wright, 2008 .

Step bunching fabrication constraints in silicon carbide

E. G. Chester, G. J. Phelps, A. O'Neill, 2002 .

Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection

M. I. Idris, M. Weng, N. Wright, 2019, Journal of Physics D: Applied Physics.

SiC sensors: a review

N. G. Wright, N. Wright, A. Horsfall, 2007 .

Dependence of process parameters on stress generation in aluminum thin films

A. O'Neill, J. Stevenson, A. Walton, 2004, IEEE Transactions on Device and Materials Reliability.

Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

C. P. Burrows, K. S. Coleman, R. Mahapatra, 2007 .

Microgels for Controlled Uptake and Release

G. Morris, B. Vincent, N. Wright, 2003 .

Silicon Carbide Vertical JFET Operating at High Temperature

K. Hilton, M. Uren, C. M. Johnson, 2008 .

Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices

R. Mahapatra, N. Wright, A. Horsfall, 2012, Journal of Electronic Materials.

Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates

J. M. Córdoba, M. Syväjärvi, R. Yakimova, 2010 .

Oxidation modelling for SiC

A. O'Neill, C. M. Johnson, N. Wright, 1999 .

Influence of Intercalated Silicon on the Transport Properties of Graphene

P. Briddon, J. Goss, G. Jernigan, 2011 .

Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices

K. Vassilevski, N. Wright, A. Horsfall, 2012 .

Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon

C. M. Johnson, K. Vassilevski, N. Wright, 2010 .

Finite Element Simulation Model for High Temperature 4H-SiC Devices

H. Habib, N. Wright, A. Horsfall, 2011 .

Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

M. I. Idris, M. Weng, N. Wright, 2017 .

Aluminium Implantation Induced Linear Surface Faults in 4H-SiC

C. M. Johnson, K. Vassilevski, N. Wright, 2005 .

Optimisation of Heterostructure Bipolar Transistors in SiC

A. O'Neill, N. Wright, A. Horsfall, 2005 .

Dose Rate Linearity in 4H-SiC Schottky Diode-Based Detectors at Elevated Temperatures

N. Wright, A. Horsfall, N. S. Mohamed, 2017, IEEE Transactions on Nuclear Science.

High linearity silicon carbide detectors for medical applications

N. G. Wright, N. Wright, A. Horsfall, 2016, 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD).

Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

A. O'Neill, K. Hilton, M. Uren, 2005 .

Structural pattern formation in titanium–nickel contacts on silicon carbide following high-temperature annealing

A. O'Neill, C. M. Johnson, R. K. Malhan, 2006 .

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

Andrea Irace, Alberto Castellazzi, Michele Riccio, 2017 .

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

A. J. Hydes, Anthony O'Neill, Konstantin Vassilevski, 2007 .

Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance

M. Weng, R. Mahapatra, N. Wright, 2011 .

Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide

M. Weng, R. Mahapatra, N. Wright, 2008 .

4H-SiC rectifiers with dual metal planar Schottky contacts

Anthony O'Neill, Konstantin Vassilevski, Alton B. Horsfall, 2002 .

Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination

J. Goss, R. Mahapatra, N. Wright, 2012 .

Trap-Assisted Gas Sensing Mechanism in ${\rm Pd/TiO}_{2}/{\rm SiO}_{2}/{\rm SiC}$ Capacitors at High Temperatures

R. Mahapatra, M. Weng, R. Mahapatra, 2007, IEEE Sensors Journal.

Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC

K. S. Coleman, S. Chattopadhyay, R. Mahapatra, 2007 .

Temperature Dependent Chemical Sensitivity of Epitaxial Graphene

R. Myers-Ward, C. Eddy, J. Goss, 2012 .

Electrothermal Simulation of 4H-SiC Power Devices

Anthony O'Neill, Nicolas G. Wright, A. O'Neill, 1997 .

Enhanced nitrogen diffusion in 4H-SiC

E. G. Chester, G. J. Phelps, C. P. Burrows, 2002 .

Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodes

A. O'Neill, C. M. Johnson, K. Vassilevski, 2004 .

Trap-Assisted Gas Sensing Mechanism in Capacitors at High Temperatures

M. Weng, R. Mahapatra, N. Wright, 2007 .

Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001)

V. Wheeler, R. Myers-Ward, C. Eddy, 2013 .

High temperature measurements of metal contacts on epitaxial graphene

D. K. Gaskill, Joseph L. Tedesco, C. R. Eddy, 2011 .

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

J. Lees, K. Vassilevski, N. Wright, 2011 .

Obtaining mechanical parameters for metallisation stress sensor design using nanoindentation

A. O'Neill, N. Wright, A. Horsfall, 2005, International Journal of Materials Research.

Nanoindentation assessment of aluminium metallisation; the effect of creep and pile-up

N. Wright, A. Horsfall, S. Soare, 2004 .