P. Soukiassian

发表

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

V. Aroutiounian, G. A. Avetisyan, V. Buniatyan, 2006 .

Silicon carbide TUNNETT diodes

N. Camara, V. Aroutiounian, K. Zekentes, 2004 .

First direct observation of a nearly ideal graphene band structure.

C. Berger, M. Sprinkle, W. D. de Heer, 2009, Physical review letters.

Graphene: Fundamentals and functionalities

J. Boeckl, Weijie Lu, P. Soukiassian, 2012 .

Behaviour of the 3C–SiC(100) c(2 × 2) (C‐terminated) and 3 × 2 (Si‐rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures

A. Leycuras, T. Chassagne, M. Portail, 2005 .

Hydrogen Sensor Made of Porous Silicon and Covered by TiO � or ZnO Al Thin Film

V. Aroutiounian, P. Soukiassian, V. Arakelyan, 2008 .

Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization

Y. Chabal, M. Silly, V. Derycke, 2006 .

Initial nitride formation at Si∕3C–SiC(100)3×2 interface by oxynitridation

C. Radtke, J. Arnault, P. Soukiassian, 2005 .

SiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation

Y. Hwu, P. Soukiassian, C. Brylinski, 1999 .

Investigations of hydrogen sensors made of porous silicon

Vladimir M. Aroutiounian, Artsrun H. Arakelyan, P. Soukiassian, 2008 .

Hydrogen sensitive gas sensor based on porous silicon/TiO2−x structure

G. E. Shahnazaryan, V. Aroutiounian, P. Soukiassian, 2007 .

Self-organized 1D nanostructures on the β-SiC(100) surface: silicon atomic lines and dimer vacancy chains

J. Gautier, Gérald Dujardin, P. Soukiassian, 2000 .

Structure of the 3C-SiC(100) 5x2 Surface Reconstruction Investigated by Synchrotron Radiation Based Grazing Incidence X-Ray Diffraction

M. Silly, G. Renaud, P. Soukiassian, 2007 .

Polarization-dependent photoemission EXAFS investigation of the InP(110) surface structure

P. Soukiassian, P. .. Mangat, S. Kim, 1993 .

Comparison of the electronic properties of Cs and O coadsorption between W(100) and Mo(100)

P. Soukiassian, J. Lecante, R. Riwan, 1985 .

Importance of defects and dopant nature in alkali metal/III–V semiconductor interface formation and promoted oxidation

J. Bonnet, P. Soukiassian, K. Schirm, 1993 .

Use of porous silicon for double- and triple-layer antireflection coatings in silicon photovoltaic converters

V. Aroutiounian, P. Soukiassian, K. Martirosyan, 2008 .

Reflectance spectrum of diamond-like carbon/porous silicon double-layer antireflection coatings designed for silicon solar cells

V. Aroutiounian, P. Soukiassian, K. Martirosyan, 2007 .

Low reflectance of diamond-like carbon/porous silicon double layer antireflection coating for silicon solar cells

V. Aroutiounian, P. Soukiassian, K. Martirosyan, 2004 .

Interaction of atomic hydrogen with the beta-SiC(100) 3 x 2 surface and subsurface.

C. Ottaviani, E. Michel, A. Tejeda, 2007, The Journal of chemical physics.

Synchrotron radiation study of Rb/p-GaSb(110) interface formation and band bending at low temperature

J. Bonnet, P. Soukiassian, K. Hricovini, 1993 .

Microwave characteristics of BARITT diodes based on silicon carbide

Vladimir M. Aroutiounian, P. Soukiassian, V. Aroutiounian, 1999 .

Initial oxide/SiC interface formation on C-terminated β-SiC(100) c(2×2) and graphitic C-rich β-SiC(100) 1×1 surfaces

M. Silly, P. Soukiassian, H. Enriquez, 2004 .

Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization

Vincent Derycke, Mathieu G. Silly, Yves J. Chabal, 2003, Nature materials.

Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)” by Pollmann et al. (Surf. Sci. Rep. 69 (2014) 55–104)

A. Catellani, M. Silly, F. Sirotti, 2016 .

Advanced Materials Research with 3RD Generation Synchrotron Light

P. Soukiassian, H. Enriquez, M. D’angelo, 2007 .

From K atom pairs to K atomic chains: A semiconducting 2×3 to metallic 2×1 transition on the β-SiC(100) c(4×2) surface

V. Derycke, Y. Hwu, P. Soukiassian, 2006 .

Photoelectron diffraction study of the Si -rich 3 C − SiC ( 001 ) – ( 3 × 2 ) structure

E. Rotenberg, F. G. D. Abajo, J. Denlinger, 2004 .

H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization

M. Silly, V. Derycke, C. Ottaviani, 2004 .

Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction

A. Barbier, V. Derycke, G. Renaud, 2003 .

Molecular-hydrogen interaction with β-SiC(100)3×2 and c(4×2) surfaces and with Si atomic lines

V. Derycke, N. Pham, P. Soukiassian, 2001 .

MASSIVELY PARALLEL ATOMIC LINES ON SILICON CARBIDE

P. Soukiassian, 2001 .

Manufacture and investigation of hydrogen sensitive TiO2-x or ZnO film-porous silicon devices

V. Aroutiounian, P. Soukiassian, V. Arakelyan, 2008 .

Nano-structures developing at the graphene/silicon carbide interface

P. Soukiassian, S. Vizzini, H. Enriquez, 2011 .

Sodium-induced modifications in the electronic structure of the W(100) surface

F. Mila, P. Soukiassian, J. Cousty, 1986 .

Cs and Q2 adsorption, Cs+O2 co-adsorption on Mo(110): anomalous behaviour of electronic surface states studied by ARUPS using synchrotron radiation

P. Soukiassian, P. Roubin, J. Lecante, 1985 .

Electronic properties of the Cs and O co-adsorption on Mo(100) at room temperature

P. Soukiassian, J. Lecante, Y. Borensztein, 1984 .

Electron Spectroscopy on Adsorption of Cs on Transition Metals

P. Soukiassian, J. Lecante, Y. Borensztein, 1983 .

Electrophysical and photoelectrical properties of UV-range injection structures made of silicon carbide

H. V. Asriyan, F. Gasparyan, V. Aroutiounian, 2001 .

Indentification of the 6H-SiC(0001) 3×3 surface reconstruction core-level shifted components

Y. Hwu, P. Soukiassian, C. Brylinski, 2000 .

Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces

P. Soukiassian, T. Kendelewicz, 1989 .

Alkali Metal Ordering on Semiconductor Surfaces and Interfaces

P. Soukiassian, 1992 .

SB-INDUCED INTERATOMIC BOND DISTANCE STABILIZATION ON INP(100) SURFACE

Y. Huttel, B. Gruzza, P. Soukiassian, 1994 .

Low‐energy Ar+ ion bombardment‐induced modification of surface atomic bond lengths on InP(100) wafer

Y. Huttel, B. Gruzza, P. Soukiassian, 1993 .

Electronic Excitations (3 to 35 eV Range) in Some Layered III–VI Compounds: GaS, GaSe, and InSe

J. Perrin, P. Soukiassian, J. Cazaux, 1974 .

Sodium-induced H+ ion resonance on silicon surfaces

J. Peng, P. Soukiassian, P. .. Mangat, 1994 .

Probing GaSb(110) Surface and Interfaces by Photon Stimulated Desorption (PSD)

J. Peng, J. Bonnet, P. Soukiassian, 1993 .

Photon Stimulated Desorption (PSD) of positive ions from cesiated semiconductor surfaces using synchrotron radiation

P. Soukiassian, H. Starnberg, Z. Hurych, 1990 .

Graphene epitaxy on sic, having an open and a comparable mobility gap was that of the standard graphene has no gap

P. Soukiassian, S. Vizzini, H. Enriquez, 2009 .

Si-rich 6H- and 4H-SiC(0001) 3x3 surface oxidation and initial SiO2/SiC interface formation from 25 to 650 degrees C

Y. Hwu, P. Soukiassian, C. Brylinski, 2002 .

Structural properties of Na adsorbed on a Ge(100)2 × 1 surface: all electron, ab initio, density functional, cluster calculations

P. Soukiassian, E. Wimmer, L. Spiess, 1996 .

Electronic promotion of silicon oxynitridation at room temperature by alkali-metal catalysts

P. Soukiassian, A. Glachant, S. Kim, 1993 .

Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study

P. Soukiassian, A. Glachant, 1993 .

Si3N4‐Si interface formation by catalytic nitridation using nitrogen exposures on alkali metal overlayers and removal of the catalyst: N2/Na/Si (100) 2×1

T. Gentle, P. Soukiassian, M. Bakshi, 1987 .

Carbon-based nanoscience and nanotechnology: where are we, where are we heading?

P. Soukiassian, M. Rao, 2010 .

Local investigation of the emissive properties of LaB6–ZrB2 eutectics

J. Boeckl, L. Douillard, P. Soukiassian, 2017, Journal of Materials Science.

Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

Y. Hwu, P. Soukiassian, C. Brylinski, 2001 .

Enhancement of silicon nitridation by alkali metals

T. Gentle, P. Soukiassian, H. Starnberg, 1988 .

Na/carbon‐rich β‐SiC(100) surface: Initial interface formation and metallization

F. Semond, P. Soukiassian, L. Cioccio, 1995 .

Al2O3+x/Al interface formation by promoted oxidation using an alkali metal and removal of the catalyst

Y. Huttel, P. Soukiassian, P. .. Mangat, 1993 .

Surface relaxation and rumpling of Sn-doped β−Ga2O3(010)

J. Boeckl, S. Mou, D. Dorsey, 2020, Physical Review B.

Adsorption of alkali metals on W(100) : an EELS study

P. Soukiassian, J. Cousty, R. Riwan, 1985 .

Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation

P Merino, J. Cernicharo, P. Jelínek, 2014, Nature Communications.

Hydrogen Sensor Made of Porous Silicon and Covered by TiO $_{2-{\rm x}}$ or ZnO $\langle$ Al $\rangle$ Thin Film

Vladimir M. Aroutiounian, P. Soukiassian, V. Aroutiounian, 2009 .

Synchrotron radiation study of Cs/carbon-rich β-SiC(100) and Cs/silicon-rich β-SiC(100) surfaces: metallization and interface formation

C. Jaussaud, F. Semond, P. Soukiassian, 1996 .

Investigation of the Rb/Ge(111) and Na/Ge(111) interfaces by photoemission spectroscopy using synchrotron radiation

P. Soukiassian, T. Kendelewicz, Z. Hurych, 1990 .

Chemisorption of alkali metals (Na, K, Cs) on Ge(111) surface

C. Papageorgopoulos, P. Soukiassian, T. Kendelewicz, 1990 .

Cs adsorption and Cs and O coadsorption on Mo(100): LEED and AES studies

P. Soukiassian, S. Zuber, J. Cousty, 1984 .

The electronic structure of Cs adsorbed on Mo(111)

P. Soukiassian, Y. Borensztein, R. Riwan, 1982 .

Surface science lettersElectronic properties of alkali metal/silicon interfaces: A new picture

T. Gentle, P. Soukiassian, M. Bakshi, 1989 .

Electronic properties of alkali metal/silicon interfaces: A new picture

T. Gentle, P. Soukiassian, M. Bakshi, 1989 .

Summary Abstract: Adsorption of Cs on the GaAs(110) surface

W. Spicer, I. Lindau, P. Soukiassian, 1988 .

Comment on “Cs on Si(111)2×1: Si surface state and Cs valence state”

P. Soukiassian, 1986 .

Catalytic Oxidation of Semiconductors by Alkali Metals

T. Gentle, P. Soukiassian, A. Bommannavar, 1987 .

Leed studies of Cs adsorption on Cu(100) at room and low temperature

P. Soukiassian, J. Cousty, R. Riwan, 1985 .

Influence of a donor adsorbate (Cs) on W(100) and Ta(100) 4f surface core level shifts

P. Soukiassian, J. Lecante, J. Cousty, 1985 .

O 1s investigation of SiO2/Si interface formation using an alkali metal promoter

Y. Huttel, F. Semond, P. Soukiassian, 1993 .

Structure of Prototypical Semiconductor Surfaces and Interfaces Investigated by Photoemission Extended X-Ray Absorption Fine Structure (PEXAFS)

P. Soukiassian, P. .. Mangat, 1998 .

O2/K/Ge(100)2×1 and O2/Cs/Ge(100)2×1 : puzzling behavior of K and Cs in the oxidation of germanium

P. Soukiassian, K. Hricovini, Y. Borensztein, 1993 .

Combined theoretical and experimental determination of the atomic structure and adsorption site of Na on the Si(100)2 × 1 surface

A. Freeman, P. Soukiassian, S. P. Tang, 1993 .

Theoretical and experimental study of the Na/Si(100)2 x 1 surface structure

B. Delley, A. Freeman, P. Soukiassian, 1993 .

Structural properties of alkali metal/Si(100)2 × 1 interfaces investigated by PEXAFS and STM

J. Kubby, P. Soukiassian, S. Kim, 1992 .

Catalytic Nitridation of a III-V Semiconductor Using Alkali Metal

P. Soukiassian, H. Starnberg, T. Kendelewicz, 1990 .

Negative differential resistance at Ag∕Si nanowires on silicon carbide: From a passive to an active massively parallel architecture

M. Silly, F. Charra, P. Soukiassian, 2007 .

SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species

T. Gentle, P. Soukiassian, M. Bakshi, 1986 .

CH3Cl adsorption on a Si(100)2 × 1 surface modified by alkali metal overlayer studied by soft X-ray photoemission using synchrotron radiation

T. Gentle, P. Soukiassian, M. Bakshi, 1988 .

Insulator-semiconductor interface formation by electronic promotion using alkali metal and removal of the catalyst

P. Soukiassian, H. Starnberg, T. Kendelewicz, 1990 .

Rbβ-SiC(100) surface and catalytic oxidation of the substrate

S. Dupont, P. Soukiassian, M. Riehl-Chudoba, 1995 .

Unmonochromatized synchrotron radiation promoted silicon oxynitridation at room temperature

P. Soukiassian, A. Papageorgopoulos, A. Glachant, 1991 .

Atomic structure determination of the 3C-SiC(001) c(4x2) surface reconstruction: Experiment and theory

E. Rotenberg, J. Denlinger, E. Michel, 2007 .

Ordering transition on the K/Si(001) surface

W. J. Greene, J. Kubby, P. Soukiassian, 1991 .

The role of alkali-metal layers in the oxidation of Si and Ge surfaces: a comparative study

P. Soukiassian, K. Schirm, L. Surnev, 1995 .

Nitric oxide adsorption on the Si(111)7 × 7 surface: Effect of potassium overlayers

P. Soukiassian, L. Surnev, M. Riehl-Chudoba, 1994 .

Logarithmic exposure dependence in alkali-metal promoted oxidation of elemental semiconductors

P. Soukiassian, A. Papageorgopoulos, H. Starnberg, 1992 .

Alkali metal promoted oxidation of semiconductors: oxidation kinetics

P. Soukiassian, H. Starnberg, Z. Hurych, 1990 .

Alkali-Metal-Induced Highest Fermi-Level Pinning Position above Semiconductor Conduction Band Minimum

P. Soukiassian, K. Hricovini, G. Lay, 1994 .

Photon-Stimulated Desorption (PSD) Study of H+ Ions from Clean and Oxygen-Covered Cs/Si(100) 2 × 1 Surfaces

P. Soukiassian, H. Starnberg, Z. Hurych, 1989 .

Exceptionally large enhancement of InP (110) oxidation rate by cesium catalyst

P. Soukiassian, M. Bakshi, Z. Hurych, 1987 .

INITIAL STEPS OF ALKALI-METAL-PROMOTED OXIDATION OF THE Al(111) SURFACE

Y. Huttel, P. Soukiassian, P. .. Mangat, 1995 .

Na/InAs(110) interface formation at RT

P. Soukiassian, G. Lay, V. Aristov, 1995 .

Selective silver atom interaction at beta-SiC(100) surfaces: From anisotropic diffusion to metal atomic wires and stripes

P. Soukiassian, M. D’angelo, V. Aristov, 2007 .

Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel

A. Taleb-Ibrahimi, P. Soukiassian, M. Grehk, 1996 .

Hydrogen-induced nanotunnel opening within semiconductor subsurface

M. Silly, F. Sirotti, C. Giallombardo, 2013, Nature Communications.

GaP, GaAs, and InP nitridation at room temperature by N2 adsorption on (110) surfaces modified by alkali metals

P. Soukiassian, H. Starnberg, T. Kendelewicz, 1992 .

Rb- and K-promoted nitridation of cleaved GaAs and InP surfaces at room temperature

P. Soukiassian, H. Starnberg, T. Kendelewicz, 1992 .

A study of InP(100) surface passivation by antimony deposition

P. Soukiassian, L. Bideux, P. .. Mangat, 1997 .

Combined reflectance anisotropy and photoemission spectroscopies of Cs/GaAs(001) interface formation

P. Soukiassian, D. Paget, A. Gusev, 1997 .

Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface

A. Taleb-Ibrahimi, P. Soukiassian, G. Lay, 1999 .

Geometry and mode of growth of alkali metal/Si(100)2×1 interfaces

A. Freeman, J. Kubby, P. Soukiassian, 1993 .

Photoinduced oxynitride formation on semiconductors: NO on Si(111)2 × 1

J. Peng, P. Soukiassian, A. Glachant, 1992 .

New aspects in the oxygen related satellite observed in photoemission for high Tc superconducting oxides

G. Collin, P. Soukiassian, R. V. Kasowski, 1991 .

Cs‐induced highest EF jump above InAs(110) conduction‐band minimum

P. Soukiassian, K. Hricovini, G. Lay, 1994 .

Electronic structure of ceramics and thin‐film samples of high Tc Bi2Sr2CaCu2O8+δ superconductors: Effects of Ar+ sputtering, O2 exposure, and Rb deposition

C. Eom, W. Spicer, Z. Shen, 1988 .

Atomic cracks and (23×2×3)-R30° reconstruction at 6H-SiC(0001) surface

P. Soukiassian, C. Brylinski, F. Amy, 2004 .

High temperature dismantling of Si atomic lines on β-SiC(100)

P. Soukiassian, Ludovic Douillard, L. Douillard, 1999 .

Ab initio parameterization of a charge optimized many-body forcefield for Si-SiO2: Validation and thermal transport in nanostructures.

A. France-Lanord, P. Soukiassian, E. Wimmer, 2016, The Journal of chemical physics.

The Ostwald ripening at nanoengineering of InAsSbP spherical and ellipsoidal quantum dots on InAs (100) surface

T. Boeck, V. Aroutiounian, P. Soukiassian, 2013 .

Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

V. Aroutiounian, P. Soukiassian, O. Marquardt, 2012 .

Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

V. Aroutiounian, P. Soukiassian, K. Gambaryan, 2010 .

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

V. Aroutiounian, P. Soukiassian, K. Gambaryan, 2008 .

Optical Constants and Electronic Structure of Crystalline and Amorphous As2S3 in the 3 to 35 eV Range

J. Perrin, P. Soukiassian, J. Cazaux, 1974, April 1.

Photoemission measurements of quantum states in accumulation layers at narrow band gap III–V semiconductor surfaces

Heesoo Kim, A. Taleb-Ibrahimi, P. Soukiassian, 2000 .

Low-frequency noise in non-homogeneously doped semiconductor

H. V. Asriyan, F. Gasparyan, V. Aroutiounian, 2004 .

Photon Stimulated H+ Ion Desorption Studies of Silicon Surfaces Covered by Alkali Metals

J. Peng, P. Soukiassian, P. .. Mangat, 1993 .

Chemistry and electronic properties of metal contacts on an organic molecular semiconductor

Y. Hirose, A. Kahn, Chih‐I Wu, 1997 .

Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride

Antoine Kahn, P. Soukiassian, V. Aristov, 1996 .

Porous silicon near room temperature nanosensor covered by TiO2 or ZnO thin films

Vladimir M. Aroutiounian, Vardan Galstyan, P. Soukiassian, 2008, SPIE Defense + Commercial Sensing.

Techniques for the detection of photodesorbed negative ions

C. E. Young, D. Gruen, M. Pellin, 1988 .

Scanning tunneling microscopy investigation of the C-terminated β-SiC(100) c(2×2) surface reconstruction: dimer orientation, defects and antiphase boundaries

Gérald Dujardin, P. Soukiassian, V. Derycke, 2000 .

Atomic structure determination of the Si-rich β-SiC(001) 3×2 surface by grazing-incidence x-ray diffraction: A stress-driven reconstruction

A. Barbier, G. Renaud, F. Semond, 2003 .

Low Temperature Ultrathin Dielectrics on Silicon and Silicon Carbide Surfaces: From the Atomic Scale to Interface Formation

P. Soukiassian, 1998 .

Highly Stable Si Atomic Line Formation on the {beta} -SiC(100) Surface

Fabrice Semond, Gérald Dujardin, P. Soukiassian, 1997 .

Direct Observation of a -SiC(100)- c(42) Surface Reconstruction

Christian Joachim, Fabrice Semond, Gérald Dujardin, 1997 .

Antimony on metal and semiconductor surfaces: interface formation and passivation

Y. Huttel, P. Soukiassian, P. .. Mangat, 1996 .

Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3).

Y. Chabal, Y. Hwu, G. Dujardin, 2001, Physical review letters.

Atomic Scale Oxidation of a Complex System

Y. Chabal, P. Soukiassian, H. Enriquez, 2001 .

Atomic scale control and understanding of cubic silicon carbide surface reconstructions,nanostructures and nanochemistry

P. Soukiassian, H. Enriquez, 2004 .

Direct SiO2/β‐SiC(100)3×2 interface formation from 25 °C to 500 °C

L. Douillard, F. Semond, S. Rivillon, 1996 .

Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

P. Soukiassian, F. Amy, 2005 .

Electronic evidence of asymmetry in the SiÑ111ÖA3ˆA3-Ag structure

C. Ottaviani, A. Cricenti, S. Hasegawa, 2003 .

Isotopic effect in deuterium-induced semiconductor surface metallization: D∕3C–SiC(100)3×2

C. Radtke, C. Spezzani, P. Soukiassian, 2006 .

Engineering Cubic Silicon Carbide Surfaces Properties Using Hydrogen: Metallization versus Passivation

P. Soukiassian, 2006 .

Multilayer epitaxial graphene grown on the surface; structure and electronic properties

M. Sprinkle, E. Conrad, J. Hass, 2010 .

Atomic Structure of Si-Rich 3C-SiC(001)-(3x2): a Photoelectron Diffraction Study

E. Rotenberg, J. Denlinger, E. Michel, 2003 .

Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

P. Soukiassian, P. Soukiassian, 1999 .

Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology

L. Douillard, C. Jaussaud, F. Semond, 1998 .

Thermal Transport in Supported Graphene: Substrate Effects on Collective Excitations

A. France-Lanord, P. Soukiassian, E. Wimmer, 2017 .

Epitaxial graphene: the material for graphene electronics

C. Berger, M. Sprinkle, W. D. de Heer, 2009 .

Double- and triple-layer antireflection coatings for silicon solar cells based on porous silicon

Vladimir M. Aroutiounian, Khachatur S. Martirosyam, Armen S. Hovhannisyan, 2006, SPIE Optics + Photonics.

Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3×2 surface

P. Moras, P. Soukiassian, M. Silly, 2004 .

Pairs of Si atomic lines self-assembling on the β-SiC(100) surface: an 8×2 reconstruction

P. Soukiassian, L. Douillard, L. Douillard, 1998 .

ZnSe(100): The surface and the formation of Schottky barriers with Al and Au

A. Kahn, W. Chen, P. Soukiassian, 1994 .

Schottky barrier formation at nonreactive interfaces : Ga/GaAs(100) and Pb/GaAs(100)

J. Harbison, L. Florez, A. Kahn, 1993 .

Soft x‐ray core level photoemission study of the Cs/InP interface formation

W. Spicer, I. Lindau, P. Soukiassian, 1988 .

Alkali metals and semiconductor surfaces: electronic, structural and catalytic properties

P. Soukiassian, H. Starnberg, 1989 .

Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure

J. Boeckl, W. Mitchel, L. Douillard, 2017 .

Comment on ``Missing-Row Asymmetric-Dimer Reconstruction of SiC(100)- c$4 × 2$''

Christian Joachim, Erich Wimmer, Fabrice Semond, 1999 .

Reconstruction of the Si-terminated β-SiC(100) surface

C. Joachim, L. Douillard, F. Semond, 1998 .

Temperature-Induced Semiconducting {ital c}(4 {times} 2) {Leftrightarrow} Metallic (2 {times} 1) Reversible Phase Transition on the {beta} -SiC(100) Surface

P. Soukiassian, Ludovic Douillard, L. Douillard, 1997 .

Atomic scale engineering of nanostructures at silicon carbide surfaces

Vincent Derycke, Patrick Soukiassian, Fabrice Semond, 2005, Microelectron. J..

Scanning tunneling microscopy evidence of background contamination-induced 2×1 ordering of the β-SiC(100) c(4×2) surface

L. Douillard, P. Soukiassian, O. Fauchoux, 2000 .

Oxynitridation of cubic silicon carbide (100) surfaces

L. Douillard, P. Soukiassian, F. Amy, 1999 .

Small-signal analysis of quantum-well BARITT diodes based on silicon carbide

P. Soukiassian, Vladimir M. Aroutiounian, V. V. Buniatyan, 2001, SPIE Optics + Photonics.

Role of defects in the passivation of III–V semiconductor surfaces modified by alkali metals: O2/Rb/p‐ and n‐type GaSb(110)

J. Bonnet, P. Soukiassian, K. Schirm, 1992 .

THE LIQUID PHASE EPITAXY OF SELF–ASSEMBLED InAsSbP–BASED STRAIN INDUCED ISLANDS ON InAs SUBSTRATES AND THEIR EVOLUTION FROM PYRAMIDS TO QUANTUM DOTS

T. Boeck, V. Aroutiounian, P. Soukiassian, 2008 .

Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA.

Kahn, Forrest, Hirose, 1996, Physical review. B, Condensed matter.

Almost zero reflectance of a silicon oxynitride/porous silicon double layer antireflection coating for silicon photovoltaic cells

Vladimir M. Aroutiounian, P. Soukiassian, V. Aroutiounian, 2006 .

Interband Transitions in Some Layered Chalcogenide Semiconductors

J. Perrin, P. Soukiassian, J. Cazaux, 1974 .

Composition and Structure of β-SiC(100)-(2 × 2) Surfaces Monitored by Photoemission Spectroscopy using Synchrotron Radiation

L. Douillard, F. Semond, S. Rivillon, 1998 .

CARBON ATOMIC CHAIN FORMATION ON THE BETA -SIC(100) SURFACE BY CONTROLLED SP SP3 TRANSFORMATION

J. Gautier, Vincent Derycke, Gérald Dujardin, 1998 .

Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based μ-spot XPS and LEEM

A. Locatelli, T. Menteş, P. Soukiassian, 2007 .

Silicon Carbide Surface Oxidation and SiO2/SiC Interface Formation Investigated by Soft X‐Ray Synchrotron Radiation

P. Soukiassian, F. Amy, 2006 .