S. Yoshida

发表

Temperature dependence of electrical properties of n‐ and p‐type 3C‐SiC

M. Yamanaka, H. Daimon, E. Sakuma, 1987 .

Epitaxial Growth, Characterization, and Properties of SiC

S. Yoshida, S. Yoshida, 2000 .

Spectral response of a photodiode using 3C-SiC single crystalline film

S. Yoshida, S. Karasawa, Y. Hirabayashi, 1994 .

Electrical and Structural Properties of Al and B Implanted 4H-SiC

Yasunori Tanaka, H. Okumura, H. Tanoue, 2000 .

Effects of gamma‐ray irradiation on cubic silicon carbide metal‐oxide‐semiconductor structure

H. Okumura, M. Yoshikawa, S. Misawa, 1991 .

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates

Sadafumi Yoshida, S. Misawa, S. Yoshida, 1983 .

Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

H. Okumura, S. Misawa, S. Yoshida, 1985 .

Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

K. Kojima, H. Okumura, S. Ji, 2020 .

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

K. Kojima, H. Okumura, S. Ji, 2019, Materials Science Forum.

CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

K. Kojima, H. Okumura, S. Ji, 2018, Materials Science Forum.

An empirical growth window concerning the input ratio of HCl/SiH4 gases in filling 4H-SiC trench by CVD

K. Kojima, H. Okumura, S. Ji, 2017 .

Influence of growth pressure on filling 4H-SiC trenches by CVD method

K. Kojima, Yasunori Tanaka, H. Okumura, 2015 .

Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

K. Kojima, Yasunori Tanaka, H. Okumura, 2015 .

Optical properties of r.f. reactive sputtered tin-doped In2O3 films

F. Shinoki, S. Yoshida, Y. Ohhata, 1979 .

Schottky barrier diodes on 3C‐SiC

E. Sakuma, S. Misawa, S. Yoshida, 1985 .

Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers

Y. Hijikata, H. Yaguchi, T. Inoue, 2008 .

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

T. Ohshima, H. Okumura, M. Yoshikawa, 1998 .

Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2021, Japanese Journal of Applied Physics.

Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy.

H. Okumura, S. Yoshida, F. Hasegawa, 1994 .

Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN

P. Hacke, G. Feuillet, H. Okumura, 1996 .

Epitaxial growth of 3C‐SiC on Si by low‐pressure chemical vapor deposition

K. Endo, E. Sakuma, S. Misawa, 1986 .

Analysis of MBE growth mode for GaN epilayers by RHEED

S. Chichibu, H. Okumura, S. Yoshida, 1998 .

Developments of the Solar Energy Collector

S. Yoshida, H. Ihara, T. Sugita, 1976 .

Defects in Ion-Implanted 3C–SiC Probed by a Monoenergetic Positron Beam

A. Uedono, T. Ohshima, Y. Aoki, 1996 .

H. Okumura, S. Yoshida, K. Balakrishnan, 1999 .

Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures

T. Ohshima, K. Ohnishi, H. Okumura, 1996 .

Preparation of Y1Ba2Cu3O7−δ Thin Films by MBE Using Metal Chelates

K. Endo, S. Misawa, S. Yoshida, 1990 .

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2020 .

Effect of retarded dipole–dipole interactions between island particles on the optical plasma-resonance absorption of a silver-island film

A. Kinbara, S. Yoshida, T. Yamaguchi, 1974 .

Changes of the Optical Properties of Aggregated Silver Films after Deposition

A. Kinbara, S. Yoshida, T. Yamaguchi, 1971 .

Effects of Optical Anisotropy of Aggregated Silver Films on Ellipsometric Determination of n, k, and d

A. Kinbara, S. Yoshida, T. Yamaguchi, 1972 .

Determination of the Inter-Island Dielectric Constant in Aggregated Silver Films, by Measurement of Optical Plasma Resonance Absorption

A. Kinbara, S. Yoshida, T. Yamaguchi, 1972 .

Optical Properties of Aggregated Silver Films

A. Kinbara, S. Yoshida, T. Yamaguchi, 1971 .

Peotoemission Study of Si (001) Surfaces Exposed to as Flux

K. Endo, H. Okumura, K. Miki, 1989 .