Jia Wu

Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

Xiao-hua Ma, Xinyu Liu, Chengzhan Li, 2016 .

Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H-SiC PiN diodes

Bo Zhang, Xiaochuan Deng, Chengzhan Li, 2015 .

Static and dynamic study in high-voltage 4H-SiC PiN rectifiers

Xuan Li, Xiaochuan Deng, Chengzhan Li, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window

Bo Zhang, Zhaoji Li, Wanjun Chen, 2017, IEEE Transactions on Electron Devices.

Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements*

Xinyu Liu, Ximing Chen, Chengzhan Li, 2016 .

Charge trapping behavior and its origin in Al 2 O 3 /SiC MIS system

Xinyu Liu, Chengzhan Li, Yun Bai, 2015 .

Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures

Xinyu Liu, Jia Wu, Yun Bai, 2016, Microelectron. Reliab..

An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors

Chengzhan Li, Huajun Shen, Jia Wu, 2015 .

A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-SiC Devices with Multi-Zone Gradient Field Limiting Ring

Bo Zhang, Chenzhan Li, Xiaochuan Deng, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).