M. Okamoto

发表

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

K. Takao, T. Kimoto, D. Okamoto, 2015 .

Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

T. Kimoto, D. Okamoto, K. Fukuda, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

T. Kimoto, D. Okamoto, K. Fukuda, 2013, 2013 IEEE International Electron Devices Meeting.

700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)

K. Arai, T. Yatsuo, M. Kasuga, 2006, IEEE Electron Device Letters.

1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC

K. Suzuki, K. Arai, T. Yatsuo, 2006, 2006 International Electron Devices Meeting.

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2015, IEEE Transactions on Electron Devices.

Effect of the oxidation process on the electrical characteristics of 4H–SiC p-channel metal-oxide-semiconductor field-effect transistors

K. Fukuda, T. Yatsuo, M. Okamoto, 2006 .

Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing

K. Fukuda, S. Harada, J. Senzaki, 2002, IEEE Electron Device Letters.

Control of Nucleation Site and Growth Orientation of Bulk GaN Crystals

Y. Mori, Takatomo Sasaki, M. Okamoto, 1999 .

Growth of nitride crystals, BN, AlN and GaN by using a Na flux

Takatomo Sasaki, M. Okamoto, M. Yoshimura, 2000 .

Influence of pressure control on the growth of bulk GaN single crystal using a Na flux

M. Okamoto, M. Yoshimura, Y. Yap, 2002 .

Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 1 ¯)/SiO2 interfaces with wet oxidation

T. Umeda, T. Hatakeyama, M. Sometani, 2019, Applied Physics Letters.

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces

A. Yoshigoe, Heiji Watanabe, M. Sometani, 2021, Japanese Journal of Applied Physics.

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

T. Umeda, T. Ohshima, S. Onoda, 2018 .

The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET

T. Umeda, T. Ohshima, S. Harada, 2019 .

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

T. Umeda, T. Ohshima, S. Onoda, 2018, Materials Science Forum.

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

T. Umeda, T. Ohshima, S. Harada, 2014 .

Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC face

K. Fukuda, M. Okamoto, N. Kumagai, 2016 .

(Invited) SiC MOS Interface States: Difference between Si Face and C Face

T. Umeda, T. Ohshima, T. Makino, 2013 .

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Kenji Suzuki, K. Fukuda, T. Yatsuo, 2004 .

Lateral RESURF MOSFET Fabricated on 4H-SiC C-Face

Makoto Kato, K. Fukuda, T. Yatsuo, 2004 .

High Performance SiC IEMOSFET/SBD Module

K. Fukuda, S. Harada, N. Iwamuro, 2012 .

Aluminum nitride thin films grown by plasma-assisted pulsed laser deposition

Y. Mori, M. Okamoto, T. Ogawa, 1997 .

The ohmic character of doped AlN films

Y. Mori, M. Okamoto, M. Yoshimura, 2001 .

Epitaxial aluminum nitride thin films grown by pulsed laser deposition in various nitrogen ambients

M. Okamoto, M. Yoshimura, Y. Yap, 2000 .

Growth of AIN thin films on (111) and (100) silicon by pulsed laser deposition in nitrogen plasma ambient

Akio Hiraki, Yusuke Mori, Akimitsu Hatta, 1997 .

Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

M. Okamoto, T. Sasaki, T. Ogawa, 1997 .

Influence of the Growth Atmosphere on the Properties of AIN Grown by Plasma - Assisted Pulsed Laser Deposition

M. Okamoto, T. Sasaki, T. Ogawa, 1996 .

Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

M. Sometani, S. Harada, M. Okamoto, 2020, Japanese Journal of Applied Physics.

Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs

D. Okamoto, H. Yano, Xufang Zhang, 2020, Japanese Journal of Applied Physics.

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

K. Fukuda, M. Okamoto, K. Arai, 2004 .

Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal–Oxide–Semiconductor Field-Effect Transistors

Kenji Fukuda, Hajime Okumura, Noriyuki Iwamuro, 2012 .

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Hiroshi Yano, Shinsuke Harada, Hajime Okumura, 2017 .

Anomalous Behavior of Gate Current and TDDB Lifetime by Constant Voltage Stress in NO-Annealed SiC-MOSFETs

M. Okamoto, E. Murakami, 2021, IEEE Transactions on Electron Devices.

Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ¯ 00 m-face and 11 2 ¯ 0 a-face characterized by Hall effect measurements

T. Hatakeyama, M. Sometani, S. Harada, 2019, Applied Physics Letters.

1270V, 1.21mΩ·cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Tsutomu Yatsuo, Koji Yano, Akio Takatsuka, 2008 .

8.5 m/spl Omega/ /spl middot/ cm/sub 2/ 600-V double-epitaxial MOSFETs in 4H-SiC

K. Adachi, K. Fukuda, T. Yatsuo, 2004, IEEE Electron Device Letters.

Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC

K. Fukuda, T. Yatsuo, M. Okamoto, 2007 .

Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

K. Fukuda, T. Yatsuo, M. Okamoto, 2006 .

Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

T. Hatakeyama, M. Sometani, S. Harada, 2020 .

Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

K. Fukuda, M. Okamoto, K. Arai, 2002 .

Investigation of reliability of NO nitrided SiC(1100) MOS devices

Heiji Watanabe, M. Sometani, Takuma Kobayashi, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Na: A New Flux for Growing Hexagonal Boron Nitride Crystals at Low Temperature

Y. Mori, M. Okamoto, M. Yoshimura, 2000 .

High-speed switching operation for a SiC CMOS and power module

Hiroshi Sato, F. Kato, S. Harada, 2021, IEICE Electron. Express.

Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well

T. Nagano, K. Fukuda, H. Okumura, 2012 .

Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method

K. Fukuda, J. Senzaki, Atsushi Shimozato, 2009 .

Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment

K. Fukuda, S. Harada, J. Senzaki, 2006 .

Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

K. Fukuda, T. Yatsuo, H. Okumura, 2009 .

First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer

S. Harada, M. Okamoto, Atsushi Yao, 2021, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET

H. Yano, M. Sometani, S. Harada, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET

Makoto Kato, K. Fukuda, T. Yatsuo, 2006 .

Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substrate

K. Arai, T. Yatsuo, K. Fukuda, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face

K. Fukuda, H. Okumura, M. Okamoto, 2012 .

Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

T. Nagano, K. Fukuda, H. Okumura, 2012 .

A 4.3−mΩcm2, 1100‐V normally‐off IEMOSFET on SiC

Kenji Fukuda, Tsutomu Yatsuo, Shinsuke Harada, 2008 .

An ultra-low R/sub ons/ in 4H-SiC vertical MOSFET: buried channel double-epitaxial MOSFET

K. Adachi, K. Arai, S. Harada, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

Lowon-resistance ininversion channel JEMOSFET formed on41-SiCC-face substrate

K. Fukuda, T. Yatsuo, S. Harada, 2006 .

8.5-m cm 600-V Double-Epitaxial MOSFETs in 4H-SiC

K. Fukuda, T. Yatsuo, S. Harada, 2004 .

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Kenji Fukuda, Manabu Arai, Hiroyuki Fujisawa, 2013 .

Lateral RESURF MOSFET fabricated on 4H-SiC(0001/sup ~/) C-face

S. Suzuki, T. Yatsuo, K. Fukuda, 2004, IEEE Electron Device Letters.

Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices

Kenji Fukuda, Manabu Arai, Yoshiyuki Yonezawa, 2012 .

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

S. Harada, H. Okumura, K. Hamada, 2019, Materials Science Forum.

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation

K. Fukuda, Y. Sugahara, S. Harada, 2014 .

Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs

D. Okamoto, T. Hatakeyama, M. Sometani, 2022, Journal of Applied Physics.

Classification of Commercial SiC-MOSFETs Based on Time-Dependent Gate-current Characteristics

M. Okamoto, T. Takeshita, K. Oda, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

A. Yoshigoe, T. Kimoto, Heiji Watanabe, 2022, Applied Physics Express.