M. Takei

发表

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

K. Takao, T. Kimoto, D. Okamoto, 2015 .

Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

T. Kimoto, D. Okamoto, K. Fukuda, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

T. Kimoto, D. Okamoto, K. Fukuda, 2013, 2013 IEEE International Electron Devices Meeting.

Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS

Yusuke Kobayashi, Tadao Morimoto, Shinsuke Harada, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET

S. Harada, M. Takei, Hiroshi Kimura, 2021, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

High-temperature Performance of 1.2 kV-class SiC Super Junction MOSFET

Yusuke Yamashiro, S. Harada, M. Takei, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth Method

T. Tanaka, Y. Kobayashi, S. Harada, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2015, IEEE Transactions on Electron Devices.

Influence of charge exchange on the collection of the laser produced ions

A. Suzuki, S. Hasegawa, M. Takei, 2001 .

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2016 .

Superior Short-Circuit Performance of SiC Superjunction MOSFET

S. Harada, M. Takei, J. Saito, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET

M. Sometani, S. Harada, J. Senzaki, 2016 .

Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001)

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2016 .

Erosion and Redeposition of Carbon in a Dense Laboratory Plasma

Satoru Tanaka, M. Takei, H. Bolt, 1992 .

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

D. Okamoto, K. Fukuda, T. Hatakeyama, 2015 .

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Kenji Fukuda, Shinsuke Harada, Hajime Okumura, 2015 .

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation

M. Sometani, S. Harada, J. Senzaki, 2016 .

32.1: Invited Paper: Printing Technologies for Organic TFT Array for Electronic Paper

Manabu Ito, Yukari Harada, Kaoru Hatta, 2012 .

20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

M. Sometani, H. Okumura, Tomohisa Kato, 2019 .

Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Kenji Fukuda, Toshihiko Hayashi, Makoto Mizukami, 2014 .

Evaluation of Schottky barrier height on 4H-SiC m-face for Schottky barrier diode wall integrated trench MOSFET

S. Harada, T. Kojima, M. Takei, 2017 .

Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

D. Okamoto, K. Fukuda, T. Hatakeyama, 2015 .

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

D. Okamoto, K. Fukuda, Yasunori Tanaka, 2014 .

Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

Atsushi Tanaka, Toshihiko Hayashi, Katsunori Asano, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Tsunenobu Kimoto, Koji Nakayama, Yuji Kiuchi, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Kenji Fukuda, Hajime Okumura, Manabu Takei, 2014 .

Development of ultrahigh voltage SiC power devices

K. Takao, T. Kimoto, D. Okamoto, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).