Tsuyoshi Araoka

Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

T. Kimoto, D. Okamoto, K. Fukuda, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

T. Kimoto, D. Okamoto, K. Fukuda, 2013, 2013 IEEE International Electron Devices Meeting.

Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing

T. Fuyuki, H. Yano, T. Hatayama, 2013 .

Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation

K. Fukuda, Y. Sugahara, S. Harada, 2014 .