S. Mori

发表

chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and its Application to Bi-Layer Resist Process

T. Morisawa, N. Matsuzawa, S. Mori, 1997 .

Theoretical estimation of absorption coefficients of various polymers at 13 nm

Hiroaki Oizumi, Ei Yano, Shinji Okazaki, 2000 .

21.1: A 513-ppi FFS-Mode TFT-LCD using CAAC Oxide Semiconductor Fabricated by a 6-Mask Proces

J. Koyama, S. Yamazaki, Y. Kubota, 2014 .

A 513‐ppi FFS‐mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode

S. Yamazaki, K. Okazaki, S. Mori, 2014 .

44.3: 513-ppi Liquid Crystal Display Using C-Axis Aligned Crystalline Oxide Semiconductor with Narrow Bezel and Aperture Ratio Greater Than 50%

J. Koyama, S. Yamazaki, S. Mori, 2014 .

P.10: WITHDRAWN: P.11: Recognition of Existence of n‐type IGZO Layer in CAAC‐IGZO Film under Source and Drain Electrode Made of Tungsten

S. Yamazaki, S. Mori, M. Tsubuku, 2013 .

52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide

S. Yamazaki, T. Hirohashi, K. Okazaki, 2013 .

Type Analysis of EGR-Strategies for Controlled Auto Ignition (CAI) by Using Numerical Simulations and Optical Measurements

Stefan Pischinger, Wolfgang Salber, Oliver Lang, 2006 .

Multi-generation device fabrication by ArF lithography

H. Ohtsuka, M. Sasago, T. Onodera, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Development of Resist Materials for EUVL

S. Okazaki, Takeo Watanabe, H. Kinoshita, 2000 .

Triplet—triplet absorption of thioxanthone and triplet energy transfer to some organic azides

S. Mori, H. Morita, H. Hayashi, 1991 .

Excitation Wavelength Dependence of Phosphorescence and Hydrogen-Bonding Formation of Thioxanthone and 2,4-Diisopentylhioxanthone

S. Mori, H. Morita, T. Yamaoka, 1988 .

Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193 nm Lithography II: Protection Groups Containing an Adamantyl Unit

T. Morisawa, N. Matsuzawa, S. Mori, 1998 .

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Masashi Tsubuku, Shunpei Yamazaki, Junichi Koezuka, 2014 .

16.1: Negative‐Bias Photodegradation Mechanism in InGaZnO TFT

Masashi Tsubuku, Shunpei Yamazaki, Shigeyasu Mori, 2013 .

Reduction of line edge roughness in the top surface imaging process

Takahiro Matsuo, Masaru Sasago, Masayuki Endo, 1998 .

8.3: Invited Paper: Advantages of IGZO Oxide Semiconductor

Akihiko Imaya, Shigeyasu Mori, Takuya Matsuo, 2014 .