R. Liu

发表

High pressure-induced structural phase transition in hexagonal CeF3 nanoplates

T. Cui, Zq Q. Chen, Bo Zou, 2012 .

Interface atomic arrangement between the nitride semiconductor and silicon

F. Ponce, A. Dadgar, A. Krost, 2003, 2003 International Symposium on Compound Semiconductors.

GaSb‐based heterostructure with buried vacuum pocket photonic crystal layer

G. Belenky, A. Stein, R. Liu, 2020 .

Raman and XRD Strain Analysis of 3D Bonded And Thinned SOI Wafers

Jian-Qiang Lu, S. Zollner, S. Pozder, 2005 .

Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

M. Khan, J. Yang, Jian Ping Zhang, 2005 .

Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

H. Amano, I. Akasaki, F. Ponce, 2003 .

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

H. Amano, I. Akasaki, A. Bell, 2003 .

Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity

J. Yi, N. Bao, R. Liu, 2017, Scientific Reports.

Room temperature magnetic properties of ZnO nanostructured films

Yingchang Yang, Li Han, J. Yang, 2011 .

Si/SiC UHV Direct Wafer Bonded Interface Structure

M. J. Kim, R. Carpenter, R. Liu, 1999 .

Local Vibration Modes in Phosphorus-Doped ZnO Nanostructure

Z. Liang, R. Liu, C. Zhang, 2012 .

Metal sintering mechanisms and regeneration of palladium/alumina hydrogenation catalysts

P. Crozier, C. M. Smith, R. Liu, 2005 .

Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si

R. Schaller, R. Liu, C. Bayram, 2020, Journal of Physics: Photonics.

Effects of dopants and excess silicon on the oxidation of TaSi2/polycrystalline silicon structures

S. Murarka, J. Pelleg, R. Liu, 1986 .

Erbium silicide formation and its contact properties on Si(100)

X. Qu, Yu-Long Jiang, G. Ru, 2008 .

Substrate temperature studies of SrBi2(Ta1−xNbx)2O9 grown by pulsed laser ablation deposition

S. T. Tay, A. Wee, C. Ong, 2002 .

Slip systems and misfit dislocations in InGaN epilayers

Y. Narukawa, F. Ponce, S. Tanaka, 2003 .

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

S. Kamiyama, H. Amano, I. Akasaki, 2004 .

Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowth

H. Amano, I. Akasaki, A. Bell, 2003 .

Contamination of TiO2 thin films spin coated on rutile and soda–lime–silica substrates

P. Koshy, C. Sorrell, R. Liu, 2020, Journal of Materials Science.

Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity

J. Yi, N. Bao, R. Liu, 2017, Scientific Reports.

Contamination of TiO2 thin films spin coated on borosilicate and rutile substrates

P. Koshy, C. Sorrell, R. Liu, 2019, Journal of Materials Science.

Luminescence from stacking faults in gallium nitride

C. Q. Chen, Fernando Ponce, M. Khan, 2005 .

Basal-plane slip in InGaN∕GaN heterostructures in the presence of threading dislocations

T. Mukai, F. Ponce, R. Liu, 2007 .

Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

S. Kamiyama, H. Amano, I. Akasaki, 2003 .

Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

J. C. Li, J. Y. Kang, R. Liu, 2016, Scientific Reports.

Suppression of UV photoluminescence in sandwich-structured Si/C composite films

P. P. Ong, Yanwu Zhu, C. Yuan, 2002 .

Microstructure and electronic properties of InGaN alloys

Fernando Ponce, M. Stevens, M. Stevens, 2003 .

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

K. Ganesan, S. Prawer, J. McCallum, 2016, 1602.00171.

Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs

A. Wee, W. Fan, S. Yoon, 2006 .

Prismatic stacking faults in epitaxially laterally overgrown GaN

Takashi Mukai, Fernando Ponce, Yukio Narukawa, 2006 .

GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer

B. K. Ng, A. Wee, W. Fan, 2005, IEEE Photonics Technology Letters.

A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

F. Ponce, S. Tanaka, R. Liu, 2001 .

Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures

T. Mukai, Y. Narukawa, F. Ponce, 2006 .

Infrared reflection investigation of ion‐implanted and post‐implantation‐annealed epitaxially grown 6H‐SiC

A. Wee, K. Tone, R. Liu, 2002 .

Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N

F. Ponce, Yiqian Wang, D. Cherns, 2002 .

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence

Fernando Ponce, Jürgen Christen, F. Ponce, 2002 .

Correction to: Contamination of TiO2 thin films spin coated on rutile and soda–lime–silica substrates

C. Sorrell, R. Liu, P. Koshy, 2021, Journal of Materials Science.

Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth

S. Kamiyama, H. Amano, I. Akasaki, 2004 .

Microstructure of In/sub x/Ga/sub 1-x/N thick epitaxial layers

F. Ponce, R. Liu, B. Jiang, 2003, 2003 International Symposium on Compound Semiconductors.