Matty Caymax

发表

Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

Geert Hellings, Jerome Mitard, Anne Vandooren, 2010, Advanced Lithography.

GeSn Technology: Impact of Sn on Ge CMOS Applications

Roger Loo, Yosuke Shimura, Matty Caymax, 2011 .

Electrical Performance of Ge Devices

Eddy Simoen, Marc Heyns, Marc Meuris, 2007 .

High-k gate stack engineering : Towards meeting low standby power and high performance targets

Paul Zimmerman, Guido Groeseneken, L. Pantisano, 2005 .

Non silicon CMOS devices: research curiosity or key to future products?

Geert Hellings, Cor Claeys, Jerome Mitard, 2014 .

Ge: an enabling material for future high-performance CMOS technologies

Marc Heyns, Guy Brammertz, Matty Caymax, 2006 .

In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/ Si1-xGex layers by spectroscopic ellipsometery and comparison with other established techniques

Roger Loo, Matty Caymax, Stephanie Kremer, 2001, Microelectronic and MEMS Technologies.

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

A 0.35 /spl mu/m BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications

S. Decoutere, Ludo Deferm, Matty Caymax, 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

WS2 transistors on 300 mm wafers with BEOL compatibility

Cedric Huyghebaert, Tom Schram, Dennis Lin, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Second-harmonic generation as characterization tool for Ge/high-k dielectric interfaces

Christoph Adelmann, Jean-Pierre Locquet, Matty Caymax, 2012, Photonics Europe.

Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

Akira Inoue, Rita Rooyackers, Denis Shamiryan, 2006 .

Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices

Roger Loo, Yosuke Shimura, Tsuyoshi Nishimura, 2010 .

SOLAR CELLS IN THIN EPITAXIAL LAYERS ON METALLURGICAL SILICON SUBSTRATES

M. Rodot, Robert Mertens, Matty Caymax, 1992 .

Observation and characterization of defects in HfO2 high-K gate dielectric layers

Stefan De Gendt, Olivier Richard, Matty Caymax, 2005, Microelectron. Reliab..

CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime

Karen Maex, Elisenda Roca, Matty Caymax, 1995, Optics & Photonics.

(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method

Eddy Simoen, Niamh Waldron, Geoffrey Pourtois, 2014 .

Structural and mechanical properties of polycrystalline silicon germanium for micromachining applications

Robert Mertens, Sherif Sedky, Matty Caymax, 1998 .

Interface and Border Traps in Ge-Based Gate Stacks

Laura Nyns, Florence Bellenger, Guy Brammertz, 2011 .

Characterization of Atomic-Beam Deposited GeO1-xNx/HfO2 Stacks on Ge

Marc Heyns, Marc Meuris, Matty Caymax, 2006 .

Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates

Gang Wang, Marc Heyns, Roger Loo, 2010 .

Electrical properties of atomic-beam deposited GeO1- xNx/HfO2 gate stacks on Ge

Marc Meuris, Florence Bellenger, Matty Caymax, 2006 .

Porous silicon as an intermediate layer for thin-film solar cell

Johan Nijs, Roger Loo, Jef Poortmans, 2001 .

Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces

Marc Heyns, Kristin De Meyer, Marc Meuris, 2011 .

Effect of hafnium germanate on the interface of HfO2/germanium metal oxide semiconductor devices

Stefan De Gendt, Marc Heyns, Marc Meuris, 2006 .

Ge1−xSnx stressors for strained-Ge CMOS

Roger Loo, Akira Sakai, Yosuke Shimura, 2011 .

Submonolayer barium passivation study for germanium(100)/molecular beam epitaxial Al2O3

Marc Heyns, Matty Caymax, Clement Merckling, 2011 .

Interface control of high-k gate dielectrics on Ge

Geoffrey Pourtois, Florence Bellenger, Matty Caymax, 2008 .

Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

Christoph Adelmann, Bart Schepers, Geoffrey Pourtois, 2012 .

Electronic properties of (100)Ge/Ge(Hf)O2 interfaces : A first-principles study

Marc Heyns, Marc Meuris, Geoffrey Pourtois, 2008 .

Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Marc Heyns, Matty Caymax, S. De Gendt, 2006 .

Advances : From Large Scale Synthesis and Controlled Heterostructures to Improved Characterization Techniques , Defects and Applications

Iuliana Radu, Cedric Huyghebaert, Stefan De Gendt, 2016 .

Electrical Properties of III-V/Oxide Interfaces

Marc Heyns, Marc Meuris, Guy Brammertz, 2009 .

Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium

Geoffrey Pourtois, Matty Caymax, Annelies Delabie, 2011 .

S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Laura Nyns, Herbert Struyf, Guy Brammertz, 2011 .

Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Naoto Horiguchi, Geert Hellings, Niamh Waldron, 2012 .

Ternary rare-earth metal oxide high-k layers on silicon oxide

Jürgen Schubert, Andre Stesmans, Hugo Bender, 2005 .

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Wilfried Vandervorst, Marc Heyns, Roger Loo, 2011 .

High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric

Jerome Mitard, Jacopo Franco, Luigi Pantisano, 2011 .

Second-harmonic generation reveals the oxidation steps in semiconductor processing

Matty Caymax, Benjamin Vincent, Ventsislav K. Valev, 2012 .

Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

Wilfried Vandervorst, K. De Meyer, Romain Delhougne, 2004 .

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Wilfried Vandervorst, Stefan De Gendt, Marc Heyns, 2004 .

High-performance strained Si/SiGe pMOS devices with multiple quantum wells

Nadine Collaert, K. De Meyer, Matty Caymax, 2002 .

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Wilfried Vandervorst, Marc Heyns, Matty Caymax, 2003 .

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

Christoph Adelmann, Marc Heyns, Marc Meuris, 2008 .

(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of InGaAs/InP Heterostrucures on Si for Advanced CMOS Devices

Niamh Waldron, Aaron Thean, Wilfried Vandervorst, 2014 .

Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

Gang Wang, Wilfried Vandervorst, Marc Heyns, 2010 .

Strain and Compositional Analysis of (Si)Ge Fin Structures Using High Resolution X‐Ray Diffraction

Naoto Horiguchi, Liesbeth Witters, Wilfried Vandervorst, 2017 .

Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

Iuliana Radu, Wilfried Vandervorst, Stefan De Gendt, 2017 .

HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

Matty Caymax, A. Dimoulas, Michel Houssa, 2005 .

Tensely strained silicon on SiGe produced by strain transfer

Reinhard Carius, Matty Caymax, Dan Buca, 2004 .

Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Niamh Waldron, Aaron Thean, Wilfried Vandervorst, 2014 .

The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

Jerome Mitard, Wilfried Vandervorst, Roger Loo, 2009 .

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Geert Hellings, Jerome Mitard, Marc Heyns, 2008 .

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie, Yu-Long Jiang, Matty Caymax, 2010 .

Realisation of thin film solar cells in epitaxial layers grown on highly doped RGS-ribbons

Johan Nijs, Robert Mertens, Jef Poortmans, 1995 .

Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

Philippe M. Vereecken, Matty Caymax, Bart Blanpain, 2007 .

Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer

Wilfried Vandervorst, Roger Loo, Romain Delhougne, 2004 .

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

Wilfried Vandervorst, Marc Heyns, Roger Loo, 2013 .

A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

Gang Wang, Eddy Simoen, Marc Heyns, 2009 .

SiGe SEG Growth for Buried Channels p-MOS Devices

Liesbeth Witters, Roger Loo, Andriy Hikavyy, 2009 .

IR bolometers made of polycrystalline silicon germanium

Sherif Sedky, Matty Caymax, Paolo Fiorini, 1998 .

Improved thermal stability of Ni-silicides on Si: C epitaxial layers

Matty Caymax, Matthias Bauer, Peter Verheyen, 2007 .

Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation

Anabela Veloso, Marc Heyns, Matty Caymax, 2006 .

High k dielectric materials prepared by atomic layer CVD

Richard Carter, Guido Groeseneken, Wilfried Vandervorst, 2001 .

High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning

Guy Brammertz, Matty Caymax, Shotaro Takeuchi, 2010 .

On the interface state density at In0.53Ga0.47As/oxide interfaces

Marc Meuris, Guy Brammertz, Matty Caymax, 2009 .

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Marc Heyns, Marc Meuris, Florence Bellenger, 2007 .

Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

Marc Heyns, K. De Meyer, Marc Meuris, 2008 .

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .

Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p+ poly-Si1−xGex and poly-Si gate materials

Magnus Willander, Matty Caymax, Per Lundgren, 2002 .

High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology

Nadine Collaert, Roger Loo, K. De Meyer, 2003 .

Challenges and opportunities in advanced Ge pMOSFETs

Geert Hellings, Jerome Mitard, Eddy Simoen, 2012 .

Physical characterization of HfO 2 deposited on Ge substrates by MOCVD.

Stefan Kubicek, Marc Meuris, Matty Caymax, 2004 .

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

Wilfried Vandervorst, Yosuke Shimura, Matty Caymax, 2011 .

A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces

Andre Stesmans, Marc Meuris, Geoffrey Pourtois, 2009 .

Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity

Emmanuel Augendre, Rita Rooyackers, E. P. Vandamme, 2000 .

Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices

Laura Nyns, D. Lin, Matty Caymax, 2011 .

Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities

Johan Nijs, Robert Mertens, Jozef Poortmans, 1994 .

Tunneling of holes is observed by second-harmonic generation

Christoph Adelmann, Matty Caymax, Ventsislav K. Valev, 2013 .

Epitaxial staircase structure for the calibration of electrical characterization techniques

Trudo Clarysse, Wilfried Vandervorst, Clayton C. Williams, 1998 .

Si cap passivation for Ge nMOS applications

Aaron Thean, Nadine Collaert, Laura Nyns, 2013 .

(Invited) Electrical Characterization of Ge-pFETs with HfO2/TiN Metal Gate: Review of Possible Defects Impacting the Hole Mobility

Jerome Mitard, Marc Heyns, Marc Meuris, 2010 .

Invited) Status and Trends in Ge CMOS Technology

Geert Hellings, Cor Claeys, Jerome Mitard, 2013 .

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Yosuke Shimura, Matty Caymax, Shigeaki Zaima, 2011 .

The vertical heterojunction MOSFET

Nadine Collaert, Roger Loo, Kristin De Meyer, 1998 .

Deposition of HfO2 on germanium and the impact of surface pretreatments

Stefan Kubicek, T. Chiarella, Matty Caymax, 2004 .

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

Guy Brammertz, Matty Caymax, Clement Merckling, 2011 .

Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy

Hugo Bender, Guy Brammertz, Matty Caymax, 2009 .

Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks

Yasuhiro Shimamoto, Osamu Tonomura, Matty Caymax, 2005 .

Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded InxGa1−xAs buffers on GaAs

Robert Langer, Matty Caymax, Bernardette Kunert, 2016 .

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality

Paul Zimmerman, Ben Kaczer, Wilfried Vandervorst, 2006 .