Brice De Jaeger

Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices

Geert Hellings, Jerome Mitard, Anne Vandooren, 2010, Advanced Lithography.

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

(Invited) Electrical Characterization of Ge-pFETs with HfO2/TiN Metal Gate: Review of Possible Defects Impacting the Hole Mobility

Jerome Mitard, Marc Heyns, Marc Meuris, 2010 .

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).