H. Konstanzer

High-reliability MOCVD-grown quantum dot laser

D. Bimberg, M. Mikulla, C. Ribbat, 2002 .

Effect of gate metal on reliability of metamorphic HEMTs

A. Leuther, H. Konstanzer, M. Dammann, 2001, 2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602).

Reverse bias stress test of GaN HEMTs for high-voltage switching applications

O. Ambacher, R. Quay, M. Mikulla, 2012, 2012 IEEE International Integrated Reliability Workshop Final Report.

Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors

O. Ambacher, R. Quay, M. Dammann, 2018, International Integrated Reliability Workshop.

Reliability of 70 nm metamorphic HEMTs

Maximilian Dammann, A. Leuther, Rüdiger Quay, 2004, Microelectron. Reliab..

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

Oliver Ambacher, Rüdiger Quay, Vladimir Polyakov, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

With electroluminescence microcopy towards more reliable AlGaN/GaN transistors

Stefan Müller, Michael Mikulla, Joachim Wagner, 2015, SPIE NanoScience + Engineering.

Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests

H. Konstanzer, R. Quay, D. Schwantuschke, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).