C. Bae

发表

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

G. Lucovsky, Y. Wu, Y. M. Lee, 2003 .

Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

G. Lucovsky, C. Bae, 2004 .

Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

G. Lucovsky, C. Bae, 2004 .

Reductions in interface defects, D it , by post oxidation plasma-assisted nitridation of GaN-SiO 2 interfaces in MOS devices

G. Lucovsky, C. Bae, 2004 .

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

G. Lucovsky, C. Bae, 2004 .

GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing

C. Bae, 2003 .

Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics

Seokhoon Kim, Jinwoo Kim, C. Bae, 2006 .

Abnormal grain growth of niobium-doped strontium titanate ceramics

Yoonho Kim, Jae-Gwan Park, C. Bae, 2005 .

Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique

M. Ishida, K. Sawada, Seokhoon Kim, 2008 .

Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods

Seokhoon Kim, K. Chung, M. Cho, 2005 .

Characteristics of HfO2 thin films grown by plasma atomic layer deposition

Seokhoon Kim, K. Chung, M. Cho, 2005 .

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

G. Lucovsky, C. Bae, 2004 .

Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition

C. Krug, Jinwoo Kim, C. Bae, 2005 .

Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf ( mp ) 4

Seokhoon Kim, K. An, Jinwoo Kim, 2006 .

Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates

Choelhwyi Bae, Si-hyung Lee, Jeon-Kook Lee, 1999 .

Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition

Seokhoon Kim, C. Bae, H. Jeon, 2007 .

Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods

Seokhoon Kim, Jinwoo Kim, C. Bae, 2006 .

Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma

Seokhoon Kim, Jinwoo Kim, C. Bae, 2006 .