M. Petrychuk

发表

AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation

N. Klein, S. Vitusevich, A. Kurakin, 2008, IEEE Transactions on Device and Materials Reliability.

Si nanowire field effect transistors: Effect of gamma radiation treatment

S. Vitusevich, A. Offenhaeusser, M. Petrychuk, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

A. Offenhäusser, S. Vitusevich, M. Petrychuk, 2013 .

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

A. Offenhäusser, S. Vitusevich, F. Gasparyan, 2014 .

Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment

L. Eastman, N. Klein, J. Smart, 2003 .

Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon- Nanotube Multilayers

A. Offenhäusser, M. Schöning, A. Poghossian, 2011, IEEE Sensors Journal.

1/f noise and mechanisms of the conductivity in carbon nanotube bundles

S. Vitusevich, B. Sundqvist, M. Petrychuk, 2011 .

Noise spectroscopy to study the 1D electron transport properties in InAs nanowires

H. Riel, S. Karg, S. Vitusevich, 2019, Nanotechnology.

Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique

A. Offenhäusser, S. Mantl, S. Vitusevich, 2013 .

Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

D. Mayer, N. Klein, S. Vitusevich, 2009 .

Liquid and back gate coupling effect: toward biosensing with lowest detection limit.

A. Offenhäusser, S. Vitusevich, M. Petrychuk, 2013, Nano letters.

Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment

A. Offenhäusser, N. Klein, A. Ural, 2010 .

Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures

N. Klein, S. Vitusevich, S. Danylyuk, 2004 .

Hooge's parameter in Si NW FET with different widths

S. Vitusevich, M. Petrychuk, Y. Kutovyi, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes.

S. Vitusevich, M. Petrychuk, V. Handziuk, 2018, Nano letters.

AlGaN/GaN heterostructures for hot electron and quantum effects

N. Klein, S. Vitusevich, A. Kurakin, 2009 .

Ternary magnetic nanocomposites based on core–shell Fe3O4/polyaniline nanoparticles distributed in PVDF matrix

N. Ogurtsov, A. Pud, M. Petrychuk, 2010 .

Origin of noise in liquid-gated Si nanowire troponin biosensors

S. Vitusevich, M. Petrychuk, V. Handziuk, 2018, Nanotechnology.

Noise spectroscopy of transport properties in carbon nanotube field-effect transistors

A. Offenhäusser, A. Ural, S. Vitusevich, 2013 .

Dynamic redistribution of the electric field of the channel in AlGaN∕GaN high electron mobility transistor with nanometer-scale gate length

H. Lüth, N. Klein, S. Vitusevich, 2005 .

Excess low-frequency noise in AlGaN'GaN-based high-electron-mobility transistors

Lester F. Eastman, A. E. Belyaev, Svetlana Vitusevich, 2002 .

Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs

L. Eastman, N. Klein, J. Smart, 2003 .

Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures

N. Klein, S. Vitusevich, S. Danylyuk, 2007 .

Single-trap kinetic in Si nanowire FETs: effect of gamma radiation treatment

S. Vitusevich, M. Petrychuk, S. Pud, 2016 .

Power and temperature dependence of low frequency noise in AlGaN/GaN transmission line model structures

N. Klein, S. Vitusevich, S. Danylyuk, 2004 .

Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels

L. Eastman, N. Klein, J. Smart, 2003 .

Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons

H. Lüth, V. Korotyeyev, S. Vitusevich, 2017, Nanotechnology.