C. Liang

Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

R. Lindsay, D. Ahlgren, E. Zhao, 2008, IEEE Transactions on Device and Materials Reliability.

Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

R. Lindsay, D. Ahlgren, E. Zhao, 2007, 2007 IEEE International Integrated Reliability Workshop Final Report.