M. Hardy

发表

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

D. Katzer, J. Calame, J. Roussos, 2021, APL Materials.

Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

D. Katzer, E. Jin, B. Downey, 2020 .

Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

S. Denbaars, S. Nakamura, D. Feezell, 2014, IEEE Photonics Technology Letters.

AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

Group III-nitride lasers: a materials perspective

S. Denbaars, S. Nakamura, D. Feezell, 2011 .

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

D. Jena, H. Xing, D. Katzer, 2019, physica status solidi (a).

Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

S. Denbaars, H. Ohta, S. Nakamura, 2010 .

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

David J. Smith, D. Katzer, M. Hardy, 2017 .

Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

David J. Smith, Lin Zhou, D. Katzer, 2016 .

Emerging materials, processing and device concepts

D. Katzer, B. Downey, M. Hardy, 2019, III-Nitride Electronic Devices.

Metallic β-Nb 2 N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates

D. Katzer, V. Wheeler, B. Downey, 2016 .

Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates

D. Katzer, V. Wheeler, B. Downey, 2015 .

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Paul R. Berger, E. Brown, D. Katzer, 2017 .

Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes

S. Denbaars, S. Nakamura, J. Speck, 2013, CLEO: 2013.

Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy

S. Denbaars, S. Nakamura, J. Speck, 2012 .

Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures

S. Denbaars, S. Nakamura, J. Speck, 2012 .

Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures

S. Denbaars, S. Nakamura, J. Speck, 2012 .

Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films Grown by MBE

D. Katzer, B. Downey, M. Hardy, 2016, Microscopy and Microanalysis.

Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

D. Katzer, B. Downey, M. Hardy, 2017, IEEE Transactions on Semiconductor Manufacturing.

AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers

S. Denbaars, S. Nakamura, D. Feezell, 2011 .

Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

David J. Smith, D. Katzer, B. Downey, 2015 .

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

D. Jena, H. Xing, D. Katzer, 2019, 2019 Compound Semiconductor Week (CSW).

Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry

E. Jin, M. Hardy, M. Tadjer, 2020, Applied Physics Letters.

444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

S. Denbaars, S. Nakamura, D. Feezell, 2012 .

Semipolar (2021) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells

S. Denbaars, D. Feezell, K. Fujito, 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures

S. Denbaars, S. Nakamura, J. Speck, 2011 .

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

D. Katzer, B. Downey, M. Hardy, 2015 .

Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy

D. Katzer, V. Gokhale, E. Jin, 2020, Applied Physics Express.

High Power Density ScAlN-Based Heterostructure FETs for mm-Wave Applications

David J. Meyer, Thomas E. Kazior, Matthew T. Hardy, 2019, 2019 IEEE MTT-S International Microwave Symposium (IMS).

Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

David J. Smith, D. Katzer, B. Downey, 2015 .

Propagation of Spontaneous Emission in Birefringent m-Axis Oriented Semipolar (1122) (Al,In,Ga)N Waveguide Structures

S. Denbaars, H. Ohta, S. Nakamura, 2010 .

Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy

D. Katzer, J. Freitas, V. Wheeler, 2020 .

Stress relaxation and critical thickness for misfit dislocation formation in (101¯0) and (3031¯) InGaN/GaN heteroepitaxy

S. Denbaars, S. Nakamura, J. Speck, 2012 .

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

P. R. Berger, David J. Smith, E. Brown, 2020 .

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

James S. Speck, Shuji Nakamura, Alexey E. Romanov, 2012 .

X–Ka Band Epitaxial ScAlN/AlN/NbN/SiC High-Overtone Bulk Acoustic Resonators

D. Katzer, V. Gokhale, B. Downey, 2023, IEEE Electron Device Letters.

Band Alignment of ScxAl1-xN/GaN Heterojunctions.

D. Katzer, J. L. Lyons, E. Jin, 2020, ACS applied materials & interfaces.

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

D. Katzer, B. Downey, M. Hardy, 2017 .

(Invited) ScAlN: A Novel Barrier Material for High Power GaN-Based RF Transistors

D. Katzer, B. Downey, M. Hardy, 2017 .

Onset of plastic relaxation in semipolar (112¯2) InxGa1−xN/GaN heterostructures

S. Denbaars, S. Nakamura, J. Speck, 2014 .

Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

James S. Speck, Shuji Nakamura, Daniel A. Cohen, 2013 .

Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

S. Denbaars, H. Ohta, S. Nakamura, 2009 .

Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures

R. Stroud, I. Vurgaftman, D. Katzer, 2018, ACS nano.

Engineering Efficient Acoustic Power Transfer in HBARs and Other Composite Resonators

D. Katzer, V. Gokhale, B. Downey, 2020, Journal of Microelectromechanical Systems.

Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates

D. Katzer, V. Wheeler, B. Downey, 2016 .

Electrical characterisation of epitaxial AlN/Nb 2 N heterostructures grown by molecular beam epitaxy

D. Katzer, V. Wheeler, B. Downey, 2016 .

Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs

E. Beam, D. Katzer, Cathy Lee, 2023, IEEE Transactions on Electron Devices.

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2013 .

Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors

J. A. Logan, M. Ancona, T. Kazior, 2022, IEEE Transactions on Electron Devices.

Scandium Aluminum Nitride as an Emerging Material for High Power Transistors

B. Downey, M. Hardy, N. Nepal, 2018, 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design

Yu Cao, David J. Meyer, Neeraj Nepal, 2020, 2020 Device Research Conference (DRC).

XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices

D. Katzer, B. Downey, M. Hardy, 2017 .

m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching

James S. Speck, Shuji Nakamura, Hiroaki Ohta, 2009 .

Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy

V. Gokhale, E. Jin, B. Downey, 2023, Journal of Applied Physics.

Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures

D. Katzer, V. Wheeler, V. Gokhale, 2023, Journal of Applied Physics.