S. Vanhaelemeersch

发表

Effects of oxygen and fluorine on the dry etch characteristics of organic low-k dielectrics

H. Bender, K. Maex, M. Baklanov, 1999 .

Characterisation of plasma etch releted residues formed on top of ECD Cu films

K. Maex, T. Conard, M. Baklanov, 1999 .

Etch process development for FLARE/sup TM/ for dual damascene architecture using a N/sub 2//O/sub 2/ plasma

G. Beyer, K. Maex, A. Van Ammel, 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

Removal of Plasma-Modified Low- k Layer Using Dilute HF: Influence of Concentration

H. Struyf, W. Boullart, Q. Le, 2005 .

Minimizing plasma damage and in situ sealing of ultralow-k dielectric films by using oxygen free fluorocarbon plasmas

G. Mannaert, Y. Travaly, A. Jonas, 2005 .

Effect of Surfactant as Additive in Wet Clean Solutions on Properties of Low-k Materials

W. Boullart, Q. Le, M. Baklanov, 2006 .

Plasma Modification of Porous Low-k Dielectrics

H. Bender, K. Maex, S. Brongersma, 2004 .

Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing

E. Sleeckx, M. V. Hove, K. Maex, 2003 .

Plasma etching of organic low-dielectric-constant polymers: comparative analysis

K. Maex, M. Baklanov, S. Vanhaelemeersch, 1998 .

Low dielectric constant materials: challenges of plasma damage

G. Mannaert, M. Baklanov, S. Vanhaelemeersch, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Surface characterization of a low dielectric constant polymer–SiLK* polymer, and investigation of its interface with Cu

K. Maex, J. Lemaire, M. Baklanov, 1999 .

The effect of plasma damage and different annealing ambients on the generation of latent interface states

G. Groeseneken, S. Vanhaelemeersch, H. C. Lee, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).

Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274µm2 6T-SRAM cell and advanced CMOS logic circuits

Vincent Wiaux, Geert Vandenberghe, Patrick Jaenen, 2005 .

Low temperature oxidation and selective etching of chemical vapor deposition a-SiC:H films

G. Mannaert, H. Bender, M. V. Hove, 2000 .

Characterization of Cu surface cleaning by hydrogen plasma

G. Beyer, K. Maex, T. Conard, 2001 .

Monitoring plasma nitridation of HfSiOx by corona charge measurements

E. Rosseel, M. Schaekers, S. Vanhaelemeersch, 2007 .

Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

Karen Maex, Denis Shamiryan, Serge Vanhaelemeersch, 2002 .

Controllable Change of Porosity of 3-Methylsilane Low-k Dielectric Film

K. Maex, D. Shamiryan, M. Baklanov, 2001 .

Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

Karen Maex, Denis Shamiryan, Serge Vanhaelemeersch, 2002 .

Polymer dielectric treatment using ultraviolet-ozone: A photoelectron spectroscopy and ellipsometric porosimetry study

K. Maex, H. Struyf, P. Louette, 2004 .

Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films

F. Iacopi, K. Maex, M. Meuris, 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

Process integration induced thermodesorption from SiO2/SiLK resin dielectric based interconnects

K. Maex, E. Kondoh, M. Judelewicz, 1999 .

Optimization of etching and stripping chemistries for Z3MS/sup TM/ Low-k

G. Mannaert, D. Shamiryan, H. Struyf, 2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).

HF Based Solutions for HfO2 Removal; Effect of pH and Temperature on HfO2: SiO2 Etch Selectivity

V. Paraschiv, S. De Gendt, W. Boullart, 2005 .

Etch process development for FLARETM for dual damascene architecture using a N2/O2 plasma

G. Beyer, K. Maex, H. Struyf, 1999 .

Critical issues in the integration of copper and low-k dielectrics

G. Beyer, K. Maex, M. Stucchi, 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

Low-k materials etch and strip optimization for sub 0.25 /spl mu/m technology

E. Rosseel, K. Maex, H. Struyf, 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

Integration of Cu and low- k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures

G. Beyer, K. Maex, M. Stucchi, 2001 .

Unusual modification of CuCl or CuBr films by He plasma exposure resulting in nanowire formation.

S. De Gendt, C. Vinckier, W. Boullart, 2010, Langmuir : the ACS journal of surfaces and colloids.

Spectroscopic observation of the methylene(~a1A1) radical in the reaction of acetylene with oxygen atoms

S. Vanhaelemeersch, J. Peeters, D. Vermeylen, 1989 .

SiF2 as a primary desorption product of Si etching by F atoms: Interpretation of laser‐induced fluorescence spectra; rate constant of the gas phase SiF2+F reaction

S. Vanhaelemeersch, J. Peeters, D. Vermeylen, 1991 .

Spectroscopic observation of the CH2(ã1A1) radical in the reaction of C2H2 with O atoms

S. Vanhaelemeersch, J. Peeters, D. Vermeylen, 1989 .

Absolute rate constant measurements of fluoromethylidyne (X2.PI.) reactions. 1. Reactions with oxygen, fluorine, chlorine and nitric oxide

Serge Vanhaelemeersch, S. Vanhaelemeersch, J. Van Hoeymissen, 1992 .

High aspect ratio via etch development for Cu nails in 3-D-stacked ICs

H. Struyf, W. Boullart, S. Vanhaelemeersch, 2008 .

Mass Metrology for controlling and understanding processes

A. Redolfi, A. Delabie, E. Kunnen, 2007, International Symposium on Semiconductor Manufacturing.

Influence of crystallographic orientation on dry etch properties of TiN

Denis Shamiryan, Vasile Paraschiv, W. Boullart, 2006 .

A novel integration scheme for wafer singulation and selective processing using temporary dry film resist

A. Redolfi, A. Lauwers, Lan Peng, 2021, 2021 IEEE 71st Electronic Components and Technology Conference (ECTC).

Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas: Afterglow of a NF3 plasma

K. Maex, W. Vandervorst, M. Baklanov, 1998 .

A 0.314/spl mu/m/sup 2/ 6T-SRAM cell build with tall triple-gate devices for 45nm applications using 0.75NA 193nm lithography

R. Rooyackers, M. Van Hove, K. Ronse, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..