A. Trigg

发表

Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy

D. Kwong, W. Yoo, A. Trigg, 2010 .

Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals

M. Tan, C. Tung, Tupei Chen, 2007 .

Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films

C. Tung, Tupei Chen, J. Wong, 2006 .

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

G. Lo, D. Kwong, Y. Yeo, 2007, IEEE Transactions on Electron Devices.

Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance

M. Yang, J. Wong, A. Trigg, 2006, IEEE Transactions on Electron Devices.

Silicon Nanowire Arrays for Ultrasensitive Label-Free Detection of DNA

K. Buddharaju, N. Singh, C. Tung, 2007, TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.

Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

Chang Li, C. Tung, Tupei Chen, 2007 .

A Two-Step Oxidation Mediated Condensation Process for Ultrathin High Ge Content SiGe Epitaxial Films on Insulator

S. Balakumar, D. Kwong, N. Balasubramanian, 2005 .

Effects of Annealing and Temperature on SGOI Fabrication Using Ge Condensation

S. Balakumar, G. Lo, D. Kwong, 2006, 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Plasma enhanced deposition of ‘silicon nitride’ for use as an encapsulant for silicon ion-implanted gallium arsenide

A. Trigg, J. Grange, D. Bartle, 1984 .

Work function tuning of metal nitride electrodes for advanced CMOS devices

D. Kwong, Y. Yeo, N. Balasubramanian, 2006 .

An examination of the reactive sputtering of silicon nitride on to gallium arsenide

A. Trigg, J. Grange, D. Bartle, 1983 .

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Dim-Lee Kwong, N. Balasubramanian, Chih-Hang Tung, 2007 .

Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals

T.P. Chen, A. Du, M. Yang, 2006, IEEE Transactions on Electron Devices.

200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers

W. H. Teh, D. Kwong, N. Balasubramanian, 2005 .

Performance of silicon nanocrystal non-volatile memory devices under various programming mechanisms.

M. Yang, J. Wong, A. Trigg, 2007, Journal of nanoscience and nanotechnology.

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n-channel metal-oxide-semiconductor field-effect transistors

D. Kwong, Y. Yeo, N. Balasubramanian, 2005 .