H. Hagino

Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application

H. Takahashi, T. Yamada, H. Haruguchi, 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

H+ implantation-enhanced stress relaxation in c-Si1−xGex on SiO2 during oxidation-induced Ge condensation process

M. Miyao, H. Hagino, Ryo Matsuura, 2005 .

Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

I. Tsunoda, M. Miyao, H. Hagino, 2006 .

Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator

H. Hagino, T. Asano, T. Enokida, 2006 .

Void free at Interface of the SiC Film and Si Substrate

H. Hagino, Yong Sun, T. Enokida, 2004 .

Examination of punch through IGBT (PT-IGBT) for high voltage and high current applications

K. Mochizuki, K. Ishii, T. Yamada, 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

A novel 30 V p-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage

H. Hagino, A. Narazaki, M. Takeda, 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

Conversion of Si(100) to Si1-x-yGexCy Alloy by Hydrogen Plasma Containing Ge and C Species

H. Hagino, Yong Sun, T. Enokida, 2002 .

Analysis of Soft Reverse Recovery of Diode and the 2 Step Gradient Structure

Hiroyasu Hagino, H. Hagino, Noriyuki Soejima, 1995 .