Qiang Xiao

A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness

L. Ngwendson, Guoyou Liu, Haihui Luo, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Xinke Wu, Kuang Sheng, Kuang Sheng, 2014, IEEE Transactions on Power Electronics.

A 10kV/200A SiC MOSFET module with series-parallel hybrid connection

Xinke Wu, Kuang Sheng, Zezheng Dong, 2014, 2014 International Power Electronics and Application Conference and Exposition.